Quotient probabilistic normed spaces and completeness results

Quotient spaces of probabilistic normed spaces have never been considered. This note is a first attempt to fill this gap: the quotient space of a PN space with respect to one of its subspaces is introduced and its properties are studied. Finally, we investigate the completeness relationship among the PN spaces considered

AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress

ESD characterization of planar InGaAs devices

We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In0.53Ga0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through independent mechanisms: transient Ef-lowering induced pre-existing e-traps discharging in the gate stack and hot hole induced e-traps generation through impact ionization in the InP buffer. These two types of traps explain the observed walk-out of off-state channel leakage current as well as the two-stage current conduction phenomena in the TLP measurement. The generated e-traps are permanent and can introduce detrimental conduction current harmful to the device performance. By properly selecting the buffer material, these defects can be removed

Number of implants placed for complete‐arch fixed prostheses: A systematic review and meta‐analysis

Objectives The main purpose of this systematic review was to evaluate outcomes related to the number of implants utilized to support complete‐arch fixed prostheses, both for the maxilla and the mandible. Materials and methods This review followed the reporting guidelines of the Preferred Reporting Items for Systematic Reviews and Meta‐Analyses (PRISMA). A focused question using the PICO format was developed, questioning whether “In patients with an implant supported fixed complete dental prosthesis, do implant and prosthetic survival outcomes differ between five or more compared to fewer than five supporting implants?”. A comprehensive search of the literature was formulated and performed electronically and by hand search. Two independent reviewers selected the papers and tabulated results. Primary outcomes analyzed were implant and prosthesis survival. Implant distribution, loading, and type of retention were observed as secondary outcomes, as they relate to the number of implants. A meta‐analysis was performed to compare results for studies by number of implants. Results The search strategy identified 1,579 abstracts for initial review. Based on evaluation of the abstracts, 359 articles were identified for full‐text evaluation. From these, 93 were selected and included in this review, being nine RCTs, 42 prospective and 42 retrospective. Of the 93 selected studies, 28 reported number of implants for the maxilla, 46 for the mandible, and 19 for both maxilla and mandible. The most reported number of implants for the “fewer than five” group is 4 for the maxilla, and 3 and 4 for the mandible, whereas for the “five or more” implants group, the most reported number of implants was 6 for the maxilla and 5 for the mandible. No significant differences in the primary outcomes analyzed were identified when fewer than five implants per arch were compared with five or more implants per arch (p > 0.05), in a follow‐up time ranging from 1 to 15 years (median of 8 years). Conclusions Evidence from this systematic review and meta‐analysis suggests that the use of fewer than five implants per arch, when compared to five or more implants per arch, to support a fixed prosthesis of the completely edentulous maxilla or mandible, present similar survival rates, with no statistical significant difference at a p < 0.05 and a confidence interval of 95%

On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

International audienc

Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

International audienc