Stimulation of exosome release by extracellular DNA is conserved across multiple cell types

This is the submitted manuscript version of the following article Iliev, D., Strandskog, G., Nepal, A., Aspar, A., Olsen, R., Jørgensen, J., ... Mironova, R. (2018). Stimulation of exosome release by extracellular DNA is conserved across multiple cell types. The FEBS Journal, 285(16), 3114-3133. https://doi.org/10.1111/febs.14601. Published version available at https://doi.org/10.1111/febs.14601.Exosomes are distinguished from other types of extracellular vesicles by their small and relatively uniform size (30-100 nm) and their composition which reflects their endo-lysosomal origin. Involvement of these extracellular organelles in intercellular communication and their implication in pathological conditions has fuelled intensive research on mammalian exosomes; however, currently, very little is known about exosomes in lower vertebrates. Here we show that, in primary cultures of head kidney leukocytes from Atlantic salmon (Salmo salar), phosphorothioate CpG oligodeoxynucleotides induce secretion of vesicles with characteristics very similar to these of mammalian exosomes. Further experiments revealed that the oligonucleotide-induced exosome secretion did not depend on the CpG motifs but it relied on the phosphorothioate modification of the internucleotide linkage. Exosome secretion was also induced by genomic bacterial and eukaryotic DNA in toll-like receptor 9-negative piscine and human cell lines demonstrating that this is a phylogenetically conserved phenomenon which does not depend on activation of immune signaling pathways. In addition to exosomes, stimulation with phosphorothioate oligonucleotides and genomic DNA induced secretion of LC3B-II, an autophagosome marker, which was associated with vesicles of diverse size and morphology, possibly derived from autophagosome-related intracellular compartments. Overall, this work reveals a previously unrecognized biological activity of phosphorothioate ODNs and genomic DNA – their capacity to induce secretion of exosomes and other types of extracellular vesicles. This finding might help shed light on the side effects of therapeutic phosphorothioate oligodeoxynucleotides and the biological activity of extracellular genomic DNA which is often upregulated in pathological conditions

The Effect of Layer Thickness on Stress Ratio and Fatigue Service Life of Plain Concrete Slab Track Structure

Indonesia has been developing a high-speed railway. Therefore, it is necessary to study slab track design configuration, which is convenient and efficient, by considering the country's environmental, geological, and geographical conditions. This paper discusses the effect of the layer thickness on the stress ratio and fatigue service life of slab track layers. The Finite Element Method (FEM) analysis was performed to numerically simulate the maximum moment caused by 180 kN of axle load. Subsequently, the classic calculation of stress ratio and fatigue service life was conducted for various layer thicknesses. The same materials specifications, axle load, and the value of subgrade reaction were applied for all slab track configurations with various thicknesses. The results indicate that the thicker each layer is, the lower stress ratio and the higher fatigue service life. The thicknesses influence the contribution of each layer in resisting the axle load in the slab track system. The slab track design is still conservative because friction between each layer of the slab track design configuration was not considered. The analysis was conducted for plain concrete slab without any reinforcement. The results are interesting for practicing engineers and researchers, and more case studies might be beneficial

The Effect of Layer Thickness on Stress Ratio and Fatigue Service Life of Plain Concrete Slab Track Structure

Indonesia has been developing a high-speed railway. Therefore, it is necessary to study slab track design configuration, which is convenient and efficient, by considering the country's environmental, geological, and geographical conditions. This paper discusses the effect of the layer thickness on the stress ratio and fatigue service life of slab track layers. The Finite Element Method (FEM) analysis was performed to numerically simulate the maximum moment caused by 180 kN of axle load. Subsequently, the classic calculation of stress ratio and fatigue service life was conducted for various layer thicknesses. The same materials specifications, axle load, and the value of subgrade reaction were applied for all slab track configurations with various thicknesses. The results indicate that the thicker each layer is, the lower stress ratio and the higher fatigue service life. The thicknesses influence the contribution of each layer in resisting the axle load in the slab track system. The slab track design is still conservative because friction between each layer of the slab track design configuration was not considered. The analysis was conducted for plain concrete slab without any reinforcement. The results are interesting for practicing engineers and researchers, and more case studies might be beneficial

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing

AES characterization and depth profiles measurements of AIN thin films on SiO2 substrates

Depth profiles measurements of the elements A1, Si, N and O were determined using Auger electron spectrometry during ion etching of an A1N C.V.D. thin film deposited on an amorphous silica substrate. The Auger spectra collected at various time intervals showed the presence of Al-O, Si-O and Si-N chemical bondings in the interphase A1N/SiO2. This result indicates that the growth of an A1N thin film on a silica substrate begins by a strong oxidation of aluminium which involves a partial nitridation of silicon