Equivalent Circuit-Based Analysis of CMUT Cell Dynamics in Arrays

Cataloged from PDF version of article.Capacitive micromachined ultrasonic transducers (CMUTs) are usually composed of large arrays of closely packed cells. In this work, we use an equivalent circuit model to analyze CMUT arrays with multiple cells. We study the effects of mutual acoustic interactions through the immersion medium caused by the pressure field generated by each cell acting upon the others. To do this, all the cells in the array are coupled through a radiation impedance matrix at their acoustic terminals. An accurate approximation for the mutual radiation impedance is defined between two circular cells, which can be used in large arrays to reduce computational complexity. Hence, a performance analysis of CMUT arrays can be accurately done with a circuit simulator. By using the proposed model, one can very rapidly obtain the linear frequency and nonlinear transient responses of arrays with an arbitrary number of CMUT cells. We performed several finite element method (FEM) simulations for arrays with small numbers of cells and showed that the results are very similar to those obtained by the equivalent circuit model

Rayleigh-Bloch waves in CMUT arrays

Cataloged from PDF version of article.Using the small-signal electrical equivalent circuit of a capacitive micromachined ultrasonic transducer (CMUT) cell, along with the self and mutual radiation impedances of such cells, we present a computationally efficient method to predict the frequency response of a large CMUT element or array. The simulations show spurious resonances, which may degrade the performance of the array. We show that these unwanted resonances are due to dispersive Rayleigh-Bloch waves excited on the CMUT surface-liquid interface. We derive the dispersion relation of these waves for the purpose of predicting the resonance frequencies. The waves form standing waves at frequencies where the reflections from the edges of the element or the array result in a Fabry-Pérot resonator. High-order resonances are eliminated by a small loss in the individual cells, but low-order resonances remain even in the presence of significant loss. These resonances are reduced to tolerable levels when CMUT cells are built from larger and thicker lates at the expense of reduced bandwidth. © 2014 IEEE

Flat band properties of twisted transition metal dichalcogenide homo- and heterobilayers of MoS2, MoSe2, WS2 and WSe2

Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide (TMD) homo- and heterobilayers that are obtained by combining MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$ monolayers, and show how flat band properties depend on the chemical composition of the bilayer as well as its twist angle. We determine the relaxed atomic structure of the twisted bilayers using classical force fields and calculate the electronic band structure using a tight-binding model parametrized from first-principles density-functional theory. We find that the highest valence bands in these systems can derive either from $\Gamma$-point or $K$/$K'$-point states of the constituent monolayers. For homobilayers, the two highest valence bands are composed of monolayer $\Gamma$-point states, exhibit a graphene-like dispersion and become flat as the twist angle is reduced. The situation is more complicated for heterobilayers where the ordering of $\Gamma$-derived and $K$/$K'$-derived states depends both on the material composition and also the twist angle. In all systems, qualitatively different band structures are obtained when atomic relaxations are neglected

A new surgical technique to facilitate osteochondral autograft transfer in osteochondral defects of the capitellum: A case report

A 17-year-old boy who was engaged in amateur weightlifting and body building presented with complaints of right elbow pain and limitation in elbow range of motion. Plain x-rays and magnetic resonance imaging showed an osteochondral defect in the medial third of the capitellum. At surgery, as a new technique, the lateral collateral ligament was detached from the humeral attachment to provide access to the capitellum with a clear and perpendicular exposure. Following removal of loose fragments within the joint, an osteochondral graft harvested from the lateral femoral condyle was implanted to the defect area of the capitellum. Postoperative radiologic controls showed that the defect was entirely filled by the graft with appropriate graft height. On follow-up examination at 12 months, the patient did not have any complaint about his elbow, and had no limitation of movement compared to the left elbow. Magnetic resonance imaging showed that the graft was successfully adapted to the recipient site without any sign of loosening. At final follow-up 40 months after surgery, the surface of the articular cartilage appeared normal. The range of elbow motion was preserved and the patient had no restriction in daily and sports activities. Considering technical difficulties posed by the narrow and complex structure of the elbow joint, this new technique involving detachment of the lateral collateral ligament facilitates perpendicular implantation of the graft. In our opinion, utilization of this new technique will improve functional and radiological results of osteochondral autograft transfer. © 2010 Turkish Association of Orthopaedics and Traumatology

X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

Cataloged from PDF version of article.In x-ray photoemission measurements, differential charging causes the measured binding energy difference between the Si 2p of the oxide and the silicon substrate to vary nonlinearly as a function of the applied external do voltage stress, which controls the low-energy electrons going into and out of the sample. This nonlinear variation is similar to the system where a gold metal strip is connected to the same voltage stress through an external 10 Mohm series resistor and determined again by x-ray photoelectron spectroscopy (XPS). We utilize this functional resemblance to determine the resistance of the 4 nm SiO2 layer on a silicon substrate as 8 Mohm. In addition, by performing time-dependent XPS measurements (achieved by pulsing the voltage stress), we determine the time constant for charging/discharging of the same system as 2.0 s. Using an equivalent circuit, consisting of a gold metal strip connected through a 10 Mohm series resistor and a 56 nF parallel capacitor, and performing time-dependent XPS measurements, we also determine the time constant as 0.50 s in agreement with the expected value (0.56 s). Using this time constant and the resistance (8.0 Mohm), we can determined the capacitance of the 4 nm SiO2 layer as 250 nF in excellent agreement with the calculated value. Hence, by application of external do and pulsed voltage stresses, an x-ray photoelectron spectrometer is turned into a tool for extracting electrical parameters of surface structures in a noncontact fashion. (c) 2005 American Institute of Physics

Nanometer-scale patterning and individual current-controlled lithography using multiple scanning probes

Cataloged from PDF version of article.Scanning probe lithography(SPL) is capable of sub-30-nm-patterning resolution and nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor industry’s lithography challenges. However, SPL throughput is significantly lower than conventional lithography techniques. Low throughput most limits the widespread use of SPL for high resolution patterning applications. This article addresses the speed constraints for reliable patterning of organic resists. Electrons field emitted from a sharp probe tip are used to expose the resist. Finite tip-sample capacitance limits the bandwidth of current-controlled lithography in which the tip-sample voltage bias is varied to maintain a fixed emission current during exposure. We have introduced a capacitance compensation scheme to ensure continuous resist exposure of SAL601 polymerresist at scan speeds up to 1 mm/s. We also demonstrate parallel resist exposure with two tips, where the emission current from each tip is individually controlled. Simultaneous patterning with multiple tips may make SPL a viable technology for high resolution lithography. © 1999 American Institute of Physic

Simultaneous use of linear and nonlinear gradients for B1 + inhomogeneity correction

The simultaneous use of linear spatial encoding magnetic fields (L-SEMs) and nonlinear spatial encoding magnetic fields (N-SEMs) in B1 + inhomogeneity problems is formulated and demonstrated with both simulations and experiments. Independent excitation k-space variables for N-SEMs are formulated for the simultaneous use of L-SEMs and N-SEMs by assuming a small tip angle. The formulation shows that, when N-SEMs are considered as an independent excitation k-space variable, numerous different k-space trajectories and frequency weightings differing in dimension, length, and energy can be designed for a given target transverse magnetization distribution. The advantage of simultaneous use of L-SEMs and N-SEMs is demonstrated by B1 + inhomogeneity correction with spoke excitation. To fully utilize the independent k-space formulations, global optimizations are performed for 1D, 2D RF power limited, and 2D RF power unlimited simulations and experiments. Three different cases are compared: L-SEMs alone, N-SEMs alone, and both used simultaneously. In all cases, the simultaneous use of L-SEMs and N-SEMs leads to a decreased standard deviation in the ROI compared with using only L-SEMs or N-SEMs. The simultaneous use of L-SEMs and N-SEMs results in better B1 + inhomogeneity correction than using only L-SEMs or N-SEMs due to the increased number of degrees of freedom. Copyright © 2017 John Wiley & Sons, Ltd

Systematic literature study of trachea and bronchus morphology in children and adults

Understanding the dimensions of the lower airway is critical for performing respiratory surgery, selecting and designing appropriate airway equipment, and removing aspirated foreign bodies via bronchoscopy, anesthesia, and radiography. The purpose of this study was to analyze the trachea and bronchus morphologically in children and adults, as well as to standardize the data for these structures' measurements. Various databases were reviewed for studies on lower airway dimensions. The criteria for inclusion and exclusion were established. Finally, it was agreed to look into 28 studies that took place between 1984 and 2021. The length of the trachea, its anterior-posterior (AP) and transverse dimensions, the lengths and transverse diameters of the right and left major bronchus, and the subcarinal angle were also investigated in the study. In studies where measurements were performed with different methods and procedures; It was revealed that age and gender were effective in the difference in lower respiratory tract dimensions. The mean values of all parameters were greater in adults than in children, the AP diameter of the trachea in adults was greater than the transverse diameter; In children, it was observed that the transverse diameter was larger than the AP diameter on average, the left main bronchus was longer than the right main bronchus, and the transverse diameter was smaller than the right main bronchus in most of the studies. Was found to be smaller. The articles reviewed for this study revealed that measurements were done using a variety of different procedures and approaches, and the resulting data were inconsistent and could not be standardized. The data collected will be beneficial both conceptually and clinically; we believe that additional comparison research involving children and adults in bigger groups are necessary

High Power CMUTs: Design and experimental verification

Cataloged from PDF version of article.Capacitive micromachined ultrasonic transducers (CMUTs) have great potential to compete with piezoelectric transducers in high-power applications. As the output pressures increase, nonlinearity of CMUT must be reconsidered and optimization is required to reduce harmonic distortions. In this paper, we describe a design approach in which uncollapsed CMUT array elements are sized so as to operate at the maximum radiation impedance and have gap heights such that the generated electrostatic force can sustain a plate displacement with full swing at the given drive amplitude. The proposed design enables high output pressures and low harmonic distortions at the output. An equivalent circuit model of the array is used that accurately simulates the uncollapsed mode of operation. The model facilities the design of CMUT parameters for high-pressure output, without the intensive need for computationally involved FEM tools. The optimized design requires a relatively thick plate compared with a conventional CMUT plate. Thus, we used a silicon wafer as the CMUT plate. The fabrication process involves an anodic bonding process for bonding the silicon plate with the glass substrate. To eliminate the bias voltage, which may cause charging problems, the CMUT array is driven with large continuous wave signals at half of the resonant frequency. The fabricated arrays are tested in an oil tank by applying a 125-V peak 5-cycle burst sinusoidal signal at 1.44 MHz. The applied voltage is increased until the plate is about to touch the bottom electrode to get the maximum peak displacement. The observed pressure is about 1.8 MPa with −28 dBc second harmonic at the surface of the array

Acoustical tuning of CMUT receiver arrays

Cell placement in an element and structural modifications on the array baffle significantly change the bandwidth, band shape and signal to noise ratio of a CMUT receiver array. In this paper, optimum receiver performance tailoring by means of cell placement, cell size variation and use of dummy cells in the array elements is discussed. The performance of the array is modified acoustically at the acoustic port of the elements. © 2016 IEEE