767 research outputs found

    Interplay Between Yu-Shiba-Rusinov States and Multiple Andreev Reflections

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    Motivated by recent scanning tunneling microscopy experiments on single magnetic impurities on superconducting surfaces, we present here a comprehensive theoretical study of the interplay between Yu-Shiba-Rusinov bound states and (multiple) Andreev reflections. Our theory is based on a combination of an Anderson model with broken spin degeneracy and nonequilibrium Green's function techniques that allows us to describe the electronic transport through a magnetic impurity coupled to superconducting leads for arbitrary junction transparency. Using this combination we are able to elucidate the different tunneling processes that give a significant contribution to the subgap transport. In particular, we predict the occurrence of a large variety of Andreev reflections mediated by Yu-Shiba-Rusinov bound states that clearly differ from the standard Andreev processes in non-magnetic systems. Moreover, we provide concrete guidelines on how to experimentally identify the subgap features originating from these tunneling events. Overall, our work provides new insight into the role of the spin degree of freedom in Andreev transport physics.Comment: 15 pages, 10 figure

    Origin of Rashba-splitting in the quantized subbands at Bi2Se3 surface

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    We study the band structure of the Bi2Se3\text{Bi}_2\text{Se}_3 topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba spin-splitting are created via bending of the conduction (CB) and the valence (VB) bands at the surface. While the CB subbands are strongly Rashba spin-split, the VB subbands do not exhibit clear spin-splitting. We find that CB and VB experience similar band bending magnitudes, which means, a spin-splitting discrepancy due to different surface potential gradients can be excluded. On the other hand, by comparing the experimental band structure to first principles LMTO band structure calculations, we find that the strongly spin-orbit coupled Bi 6pp orbitals dominate the orbital character of CB, whereas their admixture to VB is rather small. The spin-splitting discrepancy is, therefore, traced back to the difference in spin-orbit coupling between CB and VB in the respective subbands' regions

    Unusual electronic ground state of a prototype cuprate: band splitting of single CuO_2-plane Bi_2 Sr_(2-x) La_x CuO_(6+delta)

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    By in-situ change of polarization a small splitting of the Zhang-Rice singlet state band near the Fermi level has been resolved for optimum doped (x=0.4) Bi2_{2}Sr2x_{2-x}Lax_{x}CuO6+δ_{6+\delta} at the (pi,0)-point (R.Manzke et al. PRB 63, R100504 (2001). Here we treat the momentum dependence and lineshape of the split band by photoemission in the EDC-mode with very high angular and energy resolution. The splitting into two destinct emissions could also be observed over a large portion of the major symmetry line Γ\GammaM, giving the dispersion for the individual contributions. Since bi-layer effects can not be present in this single-layer material the results have to be discussed in the context of one-particle removal spectral functions derived from current theoretical models. The most prominent are microscopic phase separation including striped phase formation, coexisting antiferromagnetic and incommensurate charge-density-wave critical fluctuations coupled to electrons (hot spots) or even spin charge separation within the Luttinger liquid picture, all leading to non-Fermi liquid like behavior in the normal state and having severe consequences on the way the superconducting state forms. Especially the possibilty of observing spinon and holon excitations is discussed.Comment: 5 pages, 4 figure

    Tracking primary thermalization events in graphene with photoemission at extreme timescales

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    Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have excess energies higher than the band gap itself. In graphene, which is gapless, inverse Auger scattering is instead predicted to be dominant at the earliest time delays. Here, <8<8 femtosecond extreme-ultraviolet pulses are used to detect this imbalance, tracking both the number of excited electrons and their kinetic energy with time- and angle-resolved photoemission spectroscopy. Over a time window of approximately 25 fs after absorption of the pump pulse, we observe an increase in conduction band carrier density and a simultaneous decrease of the average carrier kinetic energy, revealing that relaxation is in fact dominated by inverse Auger scattering. Measurements of carrier scattering at extreme timescales by photoemission will serve as a guide to ultrafast control of electronic properties in solids for PetaHertz electronics.Comment: 16 pages, 8 figure

    Hidden one-dimensional electronic structure and non-Fermi liquid angle resolved photoemission line shapes of η\eta-Mo4_4O11_{11}

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    We report angle resolved photoemission (ARPES) spectra of η\eta-Mo4_4O11_{11}, a layered metal that undergoes two charge density wave (CDW) transitions at 109 K and 30 K. We have directly observed the ``hidden one-dimensional (hidden-1d)'' Fermi surface and an anisotropic gap opening associated with the 109 K transition, in agreement with the band theoretical description of the CDW transition. In addition, as in other hidden-1d materials such as NaMo6_6O17_{17}, the ARPES line shapes show certain anomalies, which we discuss in terms of non-Fermi liquid physics and possible roles of disorder.Comment: 3 figures; Erratum added to include missed reference

    Tuning independently Fermi energy and spin splitting in Rashba systems: Ternary surface alloys on Ag(111)

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    By detailed first-principles calculations we show that the Fermi energy and the Rashba splitting in disordered ternary surface alloys (BiPbSb)/Ag(111) can be independently tuned by choosing the concentrations of Bi and Pb. The findings are explained by three fundamental mechanisms, namely the relaxation of the adatoms, the strength of the atomic spin-orbit coupling, and band filling. By mapping the Rashba characteristics,i.e.the splitting and the Rashba energy, and the Fermi energy of the surface states in the complete range of concentrations. Our results suggest to investigate experimentally effects which rely on the Rashba spin-orbit coupling in dependence on spin-orbit splitting and band filling.Comment: 11 pages, 3 figure

    New Mechanism for Spin-Orbit Splitting of Conduction States in Surface Alloys

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    We present Angle-Resolved Photoelectron Spectroscopy (ARPES) data on spin-orbit split states in two XAg2 surface alloys grown on an Ag(111) substrate, and of the Si(111)-AgBiAg2 trilayer system. We briefly discuss the origin of the unusually large energy and momentum splitting, and the possibility of tuning by surface engineering the spin polarization at the Fermi level. [DOI: 10.1380/ejssnt.2009.264

    Silicon surface with giant spin-splitting

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    We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a giant spin-splitting with a Rashba energy of about 140 meV, which is more than an order of magnitude larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations. We envision important implications for basic phenomena as well as for the semiconductor based technology

    Tunneling processes between Yu-Shiba-Rusinov bound states

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    Very recent experiments have reported the tunneling between Yu-Shiba-Rusinov (YSR) bound states at the atomic scale. These experiments have been realized with the help of a scanning tunneling microscope where a superconducting tip is functionalized with a magnetic impurity and is used to probe another magnetic impurity deposited on a superconducting substrate. In this way it has become possible to study for the first time the spin-dependent transport between individual superconducting bound states. Motivated by these experiments, we present here a comprehensive theoretical study of the tunneling processes between YSR bound states in a system in which two magnetic impurities are coupled to superconducting leads. Our theory is based on a combination of an Anderson model with broken spin degeneracy to describe the impurities and nonequilibrium Green's function techniques to compute the current-voltage characteristics. This combination allows us to describe the spin-dependent transport for an arbitrary strength of the tunnel coupling between the impurities. We first focus on the tunnel regime and show that our theory naturally explains the experimental observations of the appearance of current peaks in the subgap region due to both the direct and thermal tunneling between the YSR states in both impurities. Then, we study in detail the case of junctions with increasing transparency, which has not been experimentally explored yet, and predict the occurrence of a large variety of (multiple) Andreev reflections mediated by YSR states that give rise to a very rich structure in the subgap current. In particular, we predict the occurrence of multiple Andreev reflections that involve YSR states in different impurities. These processes have no analogue in single-impurity junctions and they are manifested as current peaks with negative differential conductance for subgap voltages.Comment: 16 pages, 9 figures. arXiv admin note: text overlap with arXiv:2005.0649
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