Testing the “Black Code”: does having white close friends elicit identity denial and decreased empathy from black ingroup members?

The present experiment examined identity denial and reduced empathy for ingroup (vs. outgroup) targets as a function of the racial composition of their social networks. Black participants rated ingroup (Black) targets as more weakly racially identified and expressed less empathy for ingroup targets with cross-race close friends vs. same-race close friends or no friends. Furthermore, the effect of social network composition on empathy was mediated by perceived racial identity. These findings were limited to the ingroup target. Although the outgroup (White) target was rated as more weakly identified when shown with cross-race close friends vs. same-race close friends or no friends, neither social network composition nor perceived racial identity predicted empathy for the outgroup target. These findings extend previous research on identity denial and suggest that, for Blacks, closely associating with Whites undermines the usually robust pattern of ingroup empathy

Metal-catalyst-free growth of silica nanowires and carbon nanotubes using Ge nanostructures

The use of Ge nanostructures is investigated for the metal-catalyst-free growth of silica nanowires and carbon nanotubes (CNTs). Silica nanowires with diameters of 10-50 nm and lengths of ? 1 ?m were grown from SiGe islands, Ge dots, and Ge nanoparticles. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal that the nanowires grow from oxide nanoparticles on the sample surface. We propose that the growth mechanism is thermal diffusion of oxide through the GeO2 nanostructures. CNTs with diameters 0.6-2.5 nm and lengths of less than a few ?m were similarly grown by chemical vapor deposition from different types of Ge nanostructures. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. HRTEM images reveal that the CNTs also grow from oxide nanoparticles, comprising a mixture of GeO2 and SiO2

An experimental investigation of the relationships among race, prayer, and pain

Background and aims Compared to White individuals, Black individuals demonstrate a lower pain tolerance. Research suggests that differences in pain coping strategies, such as prayer, may mediate this race difference. However, previous research has been cross-sectional and has not determined whether prayer in and of itself or rather the passive nature of prayer is driving the effects on pain tolerance. The aim of this study was to clarify the relationships among race, prayer (both active and passive), and pain tolerance. Methods We randomly assigned 208 pain-free participants (47% Black, 53% White) to one of three groups: active prayer (“God, help me endure the pain”), passive prayer (“God, take the pain away”), or no prayer (“The sky is blue”). Participants first completed a series of questionnaires including the Duke University Religion Index, the Coping Strategies Questionnaire-Revised (CSQ-R), and the Pain Catastrophizing Scale. Participants were then instructed to repeat a specified prayer or distractor coping statement while undergoing a cold pressor task. Cold pain tolerance was measured by the number of seconds that had elapsed while the participant’s hand remained in the cold water bath (maximum 180 s). Results Results of independent samples t-tests indicated that Black participants scored higher on the CSQ-R prayer/hoping subscale. However, there were no race differences among other coping strategies, religiosity, or catastrophizing. Results of a 2 (Race: White vs. Black)×3 (Prayer: active vs. passive vs. no prayer) ANCOVA controlling for a general tendency to pray and catastrophizing in response to prayer indicated a main effect of prayer that approached significance (p=0.06). Pairwise comparisons indicated that those in the active prayer condition demonstrated greater pain tolerance than those in the passive (p=0.06) and no prayer (p=0.03) conditions. Those in the passive and no prayer distractor conditions did not significantly differ (p=0.70). There was also a trending main effect of race [p=0.08], with White participants demonstrating greater pain tolerance than Black participants. Conclusions Taken together, these results indicate that Black participants demonstrated a lower pain tolerance than White participants, and those in the active prayer condition demonstrated greater tolerance than those in the passive and no prayer conditions. Furthermore, Black participants in the passive prayer group demonstrated the lowest pain tolerance, while White participants in the active prayer group exhibited the greatest tolerance. Results of this study suggest that passive prayer, like other passive coping strategies, may be related to lower pain tolerance and thus poorer pain outcomes, perhaps especially for Black individuals. On the other hand, results suggest active prayer is associated with greater pain tolerance, especially for White individuals. Implications These results suggest that understanding the influence of prayer on pain may require differentiation between active versus passive prayer strategies. Like other active coping strategies for pain, active prayer may facilitate self-management of pain and thus enhance pain outcomes independent of race. Psychosocial interventions may help religiously-oriented individuals, regardless of race, cultivate a more active style of prayer to improve their quality of life

Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors

Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec

Evidence Collection and Storage: The Key to Effective Law Enforcement

Discusses the importance of proper evidence collection, identification, and storage to successful prosecution

Improved drive current in RF vertical MOSFETS using hydrogen anneal

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three

Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec

110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz. Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy are used to characterize the effect of the fluorine implantation energy and dose, the anneal temperature and ambient and the germanium pre-amorphisation implant on the fluorine profiles. These results show that retention of fluorine in the silicon is maximised when a high-energy fluorine implant is combined with a low thermal budget inert anneal. TEM images show that a high-energy fluorine implant into germanium pre-amorphised silicon eliminates the end of range defects from the germanium implant and produces a band of dislocation loops deeper in the silicon at the range of the fluorine implant. Boron SIMS profiles show a suppression of boron diffusion for fluorine doses at and above 5?1014cm-2, but no suppression at lower fluorine doses. This suppression of boron diffusion correlates with the appearance on the SIMS profiles of a fluorine peak at a depth of approximately Rp/2, which is attributed to fluorine trapped in vacancy-fluorine clusters. The introduction of a fluorine implant at this critical fluorine dose into a bipolar transistor process flow leads to an increase in cut-off frequency from 46 to 60GHz. Further optimisation of the base-width and the collector profile leads to a further increase in cut-off frequency to 110GHz. Two factors are postulated to contribute to the suppression of boron diffusion by the fluorine implant. First, the elimination of the germanium end of range defects, and the associated interstitial population, by the fluorine implant, removes a source of transient enhanced diffusion. Second, any interstitials released by the dislocation loops at the range of the fluorine implant would be expected to recombine at the vacancy-fluorine clusters before reaching the boron profile

Turbulence and Mountain Wave Conditions Observed with an Airborne 2-Micron Lidar

Joint efforts by the National Aeronautics and Space Administration, the Department of Defense, and industry partners are enhancing the capability of airborne wind and turbulence detection. The Airborne Coherent Lidar (light detection and ranging) for Advanced In-Flight Measurements was flown on three series of flights to assess its capability over a range of altitudes, air mass conditions, and gust phenomena. This report describes the observation of mountain waves and turbulence induced by mountain waves over the Tehachapi and Sierra Nevada mountain ranges by lidar on board the NASA Airborne Science DC-8 (McDonnell Douglas Corporation, Long Beach, California) airplane during two flights. The examples in this report compare lidar-predicted mountain waves and wave-induced turbulence to subsequent airplane-measured true airspeed. Airplane acceleration data is presented describing the effects of the wave-induced turbulence on the DC-8 airplane. Highlights of the lidar-predicted airspeed from the two flights show increases of 12 m/s at the mountain wave interface and peak-to-peak airspeed changes of 10 m/s and 15 m/s in a span of 12 s in moderate turbulence

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar