Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

The impact of different process options on the low-frequency noise (LFN) performance and reliability of Ge nFinFETs is investigated. The results show that the LFN is mainly determined by carrier number fluctuations, and the density of traps in the high- k dielectric can be reduced by an extended dry clean. In some small-size devices, the Lorentzian-type noise comes from GR centers in the oxide layer or dislocations in the Ge fins. Due to the Coulomb scattering by charged oxide traps, Ge nFinFETs with higher input-referred voltage noise at flat band voltage (Svgfb) usually have a lower mobility. Since the charged traps in the oxide layer are one of the main responsible factors for the shift of the threshold voltage, the transistors with bigger Svgfb show higher PBTI degradation, and Svgfb can be considered as an early indicator for the reliability of Ge nFinFETs

NH₃ PDA Temperature-Impact on Low-Frequency Noise Behavior of Si_0.7Ge_0.3 pFinFETs

The low-frequency (LF) noise characterization of Si0.7Ge0.3 pFinFETs and transistors’ performance were analyzed for different NH3 post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluctuations at low and intermediate drain currents. At high gate overdrive, the voltage noise Svg increases dramatically and the effect of the access resistance cannot be ignored. By analyzing the input-referred voltage noise power spectral density(PSD) at flat band voltage ( Svgfb ), we will demonstrate that nitridation of the high- κ layer at 650 °C yields the best quality gate-stack and also results in the highest mobility. While NH3 PDA temperature above 650 °C may introduce more hydrogen at the oxide layer and at the interface, hydrogen can induce hole traps and interface traps that degrade the quality of the gate-stack and reduce the mobility

On the low-frequency noise of high-kappa gate stacks : what did we learn?

A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-kappa/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps

Low-Frequency Noise Characterization of Germanium n-Channel FinFETs

status: publishe

Perilipin-mediated lipid droplet formation in adipocytes promotes sterol regulatory element-binding protein-1 processing and triacylglyceride accumulation.

Sterol regulatory element-binding protein-1 (SREBP-1) has been thought to be a critical factor that assists adipogenesis. During adipogenesis SREBP-1 stimulates lipogenic gene expression, and peroxisome proliferator-activated receptor γ (PPARγ) enhances perilipin (plin) gene expression, resulting in generating lipid droplets (LDs) to store triacylglycerol (TAG) in adipocytes. Plin coats adipocyte LDs and protects them from lipolysis. Here we show in white adipose tissue (WAT) of plin-/- mice that nuclear active SREBP-1 and its target gene expression, but not nuclear SREBP-2, significantly decreased on attenuated LD formation. When plin-/- mouse embryonic fibroblasts (MEFs) differentiated into adipocytes, attenuated LDs were formed and nuclear SREBP-1 decreased, but enforced plin expression restored them to their original state. Since LDs are largely derived from the endoplasmic reticulum (ER), alterations in the ER cholesterol content were investigated during adipogenesis of 3T3-L1 cells. The ER cholesterol greatly reduced in differentiated adipocytes. The ER cholesterol level in plin-/- WAT was significantly higher than that of wild-type mice, suggesting that increased LD formation caused a change in ER environment along with a decrease in cholesterol. When GFP-SREBP-1 fusion proteins were exogenously expressed in 3T3-L1 cells, a mutant protein lacking the S1P cleavage site was poorly processed during adipogenesis, providing evidence of the increased canonical pathway for SREBP processing in which SREBP-1 is activated by two cleavage enzymes in the Golgi. Therefore, LD biogenesis may create the ER microenvironment favorable for SREBP-1 activation. We describe the novel interplay between LD formation and SREBP-1 activation through a positive feedback loop

Processing Impact on the Low-Frequency Noise of 1.8 V Input-Output Bulk FinFETs

International audienc

複数空港競合地域における空港圏域推定モデル

application/pd

Processing Impact on the Low-Frequency Noise of 1.8 V Input-Output Bulk FinFETs

International audienc