Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer

Interference between the Modes of an All-Dielectric Meta-atom

The modes of silicon meta-atoms are investigated, motivated by their use as building blocks of Huygens metasurfaces. A model based on these modes is presented, giving a clear physical explanation of all features in the extinction spectrum. Counterintuitively, this model can show negative contributions to extinction, which are shown to arise from the interference between nonorthogonal modes. The direct and interference contributions to extinction are determined, showing that conservation of energy is preserved. The Huygens condition of matched electric-and magnetic-dipole moments leads to strong forward scattering and suppressed backscattering. It is shown that higher-order modes with appropriate symmetry generalize this condition, leading to multiple bands of directional scattering. The presented results are obtained using a robust approach to find the modes of nanophotonic scatterers, commonly referred to as quasinormal modes. By utilizing an integral formulation of Maxwell ' s equations, this work avoids the problem of normalizing diverging far fields, which other approaches require. The model and presented results are implemented in open-source code

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates

Recent developments in nanostructured materials for high-performance thermoelectrics

This highlight discusses recent trends in the search for new high-efficiency thermoelectric materials. Thermoelectric materials offer considerable attractions in the pursuit of a more efficient use of existing energy resources, as they may be used to construct power-generation devices that allow useful electrical power to be extracted from otherwise waste heat. Here, we focus on the significant enhancements in thermoelectric performance that have been achieved through nanostructuring. The principal factor behind the improved performance appears to be increased phonon scattering at interfaces. This results in a substantial reduction in the lattice contribution to thermal conductivity, a low value of which is a key requirement for improved thermoelectric performance

Are funeral homes nickel and diming the consumer to death?

Funeral prices vary greatly across the United States. Even in the same community prices can vary by hundreds or thousands of dollars for the same services. Based on existing data and from surveying funeral homes in all fifty states, we are trying to determine if the public is getting nickel and dimed to death by unnecessary or over -inflated prices

A synchrotron powder X-ray diffraction study of the skutterudite-related phases AB1.5Te1.5 (A=Co, Rh, Ir; B= Ge, Sn)

X-ray resonant scattering has been exploited to investigate the crystal structure of the AB1.5Te1.5 phases (A = Co, Rh, Ir; B = Ge, Sn). Analysis of the diffraction data reveals that CoGe1.5Te1.5 and ASn1.5Te1.5 adopt a rhombohedral skutterudite-related structure, containing diamond-shape B2Te2 rings, in which the B and Te atoms are ordered and trans to each other. Anion ordering is however incomplete, and with increasing the size of both cations and anions, the degree of anion ordering decreases. By contrast, the diffraction data of IrGe1.5Te1.5 are consistent with an almost statistical distribution of the anions over the available sites, although some ordered domains may be present. The thermoelectric properties of these materials are discussed in the light of these results