7 research outputs found
Wetting of Ga on SiO<sub><i>x</i></sub> and Its Impact on GaAs Nanowire Growth
Ga-assisted
growth of GaAs nanowires on silicon provides a path
for integrating high-purity III–Vs on silicon. The nature of
the oxide on the silicon surface has been shown to impact the overall
possibility of nanowire growth and their orientation with the substrate.
In this work, we show that not only the exact thickness, but also
the nature of the native oxide determines the feasibility of nanowire
growth. During the course of formation of the native oxide, the surface
energy varies and results in a different contact angle of Ga droplets.
We find that, only for a contact angle around 90° (i.e., oxide
thickness ∼0.9 nm), nanowires grow perpendicularly to the silicon
substrate. This native oxide engineering is the first step toward
controlling the self-assembly process, determining mainly the nanowire
density and orientation
Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires
Crystal-phase
engineering has emerged as a novel method of bandgap
engineering, made feasible by the high surface-to-volume ratio of
nanowires. There remains intense debate about the exact characteristics
of the band structure of the novel crystal phases, such as wurtzite
GaAs, obtained by this approach. We attack this problem via a low-temperature
angle-dependent magneto-photoluminescence study of wurtzite/zinc-blende
quantum disks in single GaAs nanowires. The exciton diamagnetic coefficient
is proportional to the electron–hole correlation length, enabling
a determination of the spatial extent of the exciton wave function
in the plane and along the confinement axis of the crystal-phase quantum
disks. Depending on the disk nature, the diamagnetic coefficient measured
in Faraday geometry ranges between 25 and 75 μeV/T<sup>2</sup>. For a given disk, the diamagnetic coefficient remains constant
upon rotation of the magnetic field. Along with our envelope function
calculation accounting for excitonic effects, we demonstrate that
the electron effective mass in wurtzite GaAs quantum disks is heavy,
mostly isotropic and results from mixing of the two lower-energy conduction
bands with Γ<sub>7</sub> and Γ<sub>8</sub> symmetries.
Finally, we discuss the implications of the results of the angle dependent
magneto-luminescence for the likely symmetry of the exciton states.
This work provides important insight in the band structure of wurtzite
GaAs for future nanowire-based polytypic bandgap engineering
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires
InAsSb
nanowires are promising elements for thermoelectric devices,
infrared photodetectors, high-speed transistors, as well as thermophotovoltaic
cells. By changing the Sb alloy fraction the mid-infrared bandgap
energy and thermal conductivity may be tuned for specific device applications.
Using both terahertz and Raman noncontact probes, we show that Sb
alloying increases the electron mobility in the nanowires by over
a factor of 3 from InAs to InAs<sub>0.65</sub>Sb<sub>0.35</sub>. We
also extract the temperature-dependent electron mobility via both
terahertz and Raman spectroscopy, and we report the highest electron
mobilities for InAs<sub>0.65</sub>Sb<sub>0.35</sub> nanowires to date,
exceeding 16,000 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> at 10 K
Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires
Ga-catalyzed
growth of GaAs nanowires on Si is a candidate process
for achieving seamless III/V integration on IV. In this framework,
the nature of silicon’s surface oxide is known to have a strong
influence on nanowire growth and orientation and therefore important
for GaAs nanowire technologies. We show that the chemistry and morphology
of the silicon oxide film controls liquid Ga nucleation position and
shape; these determine GaAs nanowire growth morphology. We calculate
the energies of formation of Ga droplets as a function of their volume
and the oxide composition in several nucleation configurations. The
lowest energy Ga droplet shapes are then correlated to the orientation
of nanowires with respect to the substrate. This work provides the
understanding and the tools to control nanowire morphology in self-assembly
and pattern growth
La Lanterne : journal politique quotidien
25 juillet 18991899/07/25 (N1552,A16)
Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
Tuning
light emission in bulk and quantum structures by strain
constitutes a complementary method to engineer functional properties
of semiconductors. Here, we demonstrate the tuning of light emission
of GaAs nanowires and their quantum dots up to 115 meV by applying
strain through an oxide envelope. We prove that the strain is highly
anisotropic and clearly results in a component along the NW longitudinal
axis, showing good agreement with the equations of uniaxial stress.
We further demonstrate that the strain strongly depends on the oxide
thickness, the oxide intrinsic strain, and the oxide microstructure.
We also show that ensemble measurements are fully consistent with
characterizations at the single-NW level, further elucidating the
general character of the findings. This work provides the basic elements
for strain-induced band gap engineering and opens new avenues in applications
where a band-edge shift is necessary
Plastic and Elastic Strain Fields in GaAs/Si Core–Shell Nanowires
Thanks to their unique morphology,
nanowires have enabled integration
of materials in a way that was not possible before with thin film
technology. In turn, this opens new avenues for applications in the
areas of energy harvesting, electronics, and optoelectronics. This
is particularly true for axial heterostructures, while core–shell
systems are limited by the appearance of strain-induced dislocations.
Even more challenging is the detection and understanding of these
defects. We combine geometrical phase analysis with finite element
strain simulations to quantify and determine the origin of the lattice
distortion in core–shell nanowire structures. Such combination
provides a powerful insight in the origin and characteristics of edge
dislocations in such systems and quantifies their impact with the
strain field map. We apply the method to heterostructures presenting
single and mixed crystalline phase. Mixing crystalline phases along
a nanowire turns out to be beneficial for reducing strain in mismatched
core–shell structures