13 research outputs found

    Towards scalable silicon quantum computing

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    We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures

    An oxalate cathode for lithium ion batteries with combined cationic and polyanionic redox

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    Authors acknowledge financial support from the National Natural Science Foundation of China (51822210), the Australian Research Council (ARC) for its support through Discover Project (DP 140100193),Shenzhen Peacock Plan (KQJSCX20170331161244761), the Program for Guangdong Innovative and Entrepreneurial Teams (No. 2017ZT07C341), and the Development and Reform Commission of Shenzhen Municipality for the development of the “Low-Dimensional Materials and Devices” discipline.The growing demand for advanced lithium-ion batteries calls for the continued development of high-performance positive electrode materials. Polyoxyanion compounds are receiving considerable interest as alternative cathodes to conventional oxides due to their advantages in cost, safety and environmental friendliness. However, polyanionic cathodes reported so far rely heavily upon transition-metal redox reactions for lithium transfer. Here we show a polyanionic insertion material, Li2Fe(C2O4)2, in which in addition to iron redox activity, the oxalate group itself also shows redox behavior enabling reversible charge/discharge and high capacity without gas evolution. The current study gives oxalate a role as a family of cathode materials and suggests a direction for the identification and design of electrode materials with polyanionic frameworks.Publisher PDFPeer reviewe

    Si MOS technology for spin-based quantum computing

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    International audienceWe present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics

    Qubit read-out in Semiconductor quantum processors: challenges and perspectives

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    International audienceWe report the efforts, challenges and perspectives dedicated towards building a reliable spin read-out for Si spin qubit systems. We review several strategies that are pursued in the semiconductor quantum circuit community. We discuss their pros and cons with respect to their performance (speed and fidelity), their integration potential and their footprint. We then address the envisioned architecture to read-out spin qubits at large scale
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