On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Cataloged from PDF version of article.In order to explain the experimental effect of interface states (N-ss) and series resistance (R-s) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/omega-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent R-s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (sigma(ac)) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N-ss and R-s is confirmed to have significant effect on non-ideal I-V. C-V and G/omega-V characteristics of (Ni/Au)/Al0.22Ga038N/AlN/GaN heterostructures. (C) 2011 Elsevier Ltd. All rights reserved

The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

Cataloged from PDF version of article.The profile of the interface state densities (N(ss)) and series resistances (R(s)) effect on capacitance-voltage (C-V) and conductance-voltage (G/omega-V) of (Ni/Au)/Al(x)Ga(1-x)N/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N(ss) can be attributed to reordering and restructure of surface charges. The value of series R(s) decreases with decreasing temperature. This behavior of R(s) is in obvious disagreement with that reported in the literature. It is found that the N(ss) and R(s) of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al(x)Ga(1-x)N/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature. Copyright (C) 2010 John Wiley & Sons, Ltd

The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures at high temperatures

Cataloged from PDF version of article.We investigated the behavior of the forward bias current-voltage-temperature (I-V-T) characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures in the temperature range of 295-415 K. The experimental results show that all forward bias semilogarithmic I-V curves for the different temperatures have a nearly common cross point at a certain bias voltage, even with finite series resistance. At this cross point, the sample current is temperature independent. We also found that the values of series resistance (R-s) that were obtained from Cheung's method are strongly dependent on temperature and the values abnormally increased with increasing temperature. Moreover, the ideality factor (n), zero-bias barrier height (Phi(B0)) obtained from I-V curves, and R-s were found to be strongly temperature dependent and while Phi(B0) increases, n decreases with increasing temperature. Such behavior of Phi(B0) and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of the barrier heights (BHs) at the metal/semiconductor interface. We attempted to draw a Phi(B0) versus q/2kT plot in order to obtain evidence of the GD of BHs, and the values of (Phi) over bar (B0)=1.63 eV and sigma(0)=0.217 V for the mean barrier height and standard deviation at a zero bias, respectively, were obtained from this plot. Therefore, a modified ln(I-0/T-2)-q(2)sigma(2)(0)/2(kT)(2) versus q/kT plot gives Phi(B0) and Richardson constant A(*) as 1.64 eV and 34.25 A/cm(2) K-2, respectively, without using the temperature coefficient of the barrier height. The Richardson constant value of 34.25 A/cm(2) K-2 is very close to the theoretical value of 33.74 A/cm(2) K-2 for undoped Al0,3Ga0,7N. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the (Ni/Au)-Al0.3Ga0.7/AlN/GaN heterostructures can be successfully explained based on the thermionic emission mechanism with the GD of BHs. (c) 2007 American Institute of Physics

Traditional seismic hazard analyses underestimate hazard levels when compared to observations from the 2023 Kahramanmaras earthquakes

A sequence of two major earthquakes, Mw7.8 Pazarcik, and Mw7.5 Elbistan, struck Southeastern Turkey in February 2023. The large magnitudes of the earthquakes and the short time between the two events raised questions about whether this sequence was an extremely rare disaster. Here, based on prior knowledge, we perform seismic hazard assessment for the region to estimate exceedance probabilities of observed magnitudes and ground motions. We discuss that many regional studies indicated the seismic gap in the area but with lower magnitude estimations. Observed ground motions generally agree with empirical models for the Pazarcik event. However, some records with high amplitudes exceed the highest observed amplitudes in an extensive database of shallow crustal earthquakes. We observe a notable trend of residuals for the Elbistan earthquake, leading to underestimation at long periods. We discuss potential advances in science for better characterization of such major earthquakes in the future

Determination of Bacterial Chemotaxis Response Functions by Optical Trapping

A two-lobe response function is considered as a manifestation of temporal signal comparison in bacterial chemosensing. The second lobe in the response function appears as a result of adaptive behavior of the underlying signaling network, which allows bacteria to stay sensitive over a wide range of background signal levels. It has been argued that this two-lobe response reflects the dual requirements of the bacteria to taxis along a chemical gradient and to localize once the top of the gradient is reached. Calculations based on the run-tumble motility pattern of Escherichia coli showed that the second lobe improved the bacterium's localization capability. Intrigued by a recently observed run-reverse-flick motility cycle of a marine bacterium Vibrio alginolyticus, we investigate the motility-response relationship in this bacterium. Using a novel optical trapping technique, we measure the response of V. alginolyticus to an impulsive stimulus of chemoattractant serine. By exploiting an asymmetry in the rotation of the polar flagellum, we are able to determine for the first time how the bacterium responds to chemical stimuli while swimming forward or backward. Our measurements suggest that this marine bacterium regulates its forward and backward swimming intervals differently, exhibiting behaviors that is consistent with an exploration-exploitation strategy. In our measurements, we also find that the cell-body Ω(t) and the flagellar ω(t) rotational angular frequencies oscillate in time and are in synchrony with the forward and backward swimming intervals. Unexpectedly, Ω(t) and ω(t) are found to be anticorrelated in that the cell body rotates slower in the forward direction than in the backward direction, Ωf<Ωb, but the flagellum rotates faster in the forward direction than in the backward direction. The change in the rotational load (~25%) is significantly greater than that predicted by flagellum deformation but can be accounted for by the precession of the flagellum about the body axis during the backward swimming interval. We postulate that as a result of the precession, a kink is generated at the base of the flagellum that is subsequently amplified when the flagellum motor reverses direction, leading to the flick, the direction randomization step in V. alginolyticus' motility pattern

Pure tone discrimination with cochlear implants and filter-band spread

For many cochlear implant (CI) users, frequency discrimination is still challenging. We studied the effect of frequency differences relative to the electrode frequency bands on pure tone discrimination. A single-center, prospective, controlled, psychoacoustic exploratory study was conducted in a tertiary university referral center. Thirty-four patients with Cochlear Ltd. and MED-EL CIs and 19 age-matched normal-hearing control subjects were included. Two sinusoidal tones were presented with varying frequency differences. The reference tone frequency was chosen according to the center frequency of basal or apical electrodes. Discrimination abilities were psychophysically measured in a three-interval, two-alternative, forced-choice procedure (3I-2AFC) for various CI electrodes. Hit rates were measured, particularly with respect to discrimination abilities at the corner frequency of the electrode frequency-bands. The mean rate of correct decision concerning pitch difference was about 60% for CI users and about 90% for the normal-hearing control group. In CI users, the difference limen was two semitones, while normal-hearing participants detected the difference of one semitone. No influence of the corner frequency of the CI electrodes was found. In CI users, pure tone discrimination seems to be independent of tone positions relative to the corner frequency of the electrode frequency-band. Differences of 2 semitones can be distinguished within one electrode.Publikationsfonds ML

Ecological influences on the behaviour and fertility of malaria parasites

BACKGROUND: Sexual reproduction in the mosquito is essential for the transmission of malaria parasites and a major target for transmission-blocking interventions. Male gametes need to locate and fertilize females in the challenging environment of the mosquito blood meal, but remarkably little is known about the ecology and behaviour of male gametes. METHODS: Here, a series of experiments explores how some aspects of the chemical and physical environment experienced during mating impacts upon the production, motility, and fertility of male gametes. RESULTS AND CONCLUSIONS: Specifically, the data confirm that: (a) rates of male gametogenesis vary when induced by the family of compounds (tryptophan metabolites) thought to trigger gamete differentiation in nature; and (b) complex relationships between gametogenesis and mating success exist across parasite species. In addition, the data reveal that (c) microparticles of the same size as red blood cells negatively affect mating success; and (d) instead of swimming in random directions, male gametes may be attracted by female gametes. Understanding the mating ecology of malaria parasites, may offer novel approaches for blocking transmission and explain adaptation to different species of mosquito vectors