10 research outputs found

    Genuine Counterfactual Communication with a Nanophotonic Processor

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    In standard communication information is carried by particles or waves. Counterintuitively, in counterfactual communication particles and information can travel in opposite directions. The quantum Zeno effect allows Bob to transmit a message to Alice by encoding information in particles he never interacts with. The first suggested protocol not only required thousands of ideal optical components, but also resulted in a so-called "weak trace" of the particles having travelled from Bob to Alice, calling the scalability and counterfactuality of previous proposals and experiments into question. Here we overcome these challenges, implementing a new protocol in a programmable nanophotonic processor, based on reconfigurable silicon-on-insulator waveguides that operate at telecom wavelengths. This, together with our telecom single-photon source and highly-efficient superconducting nanowire single-photon detectors, provides a versatile and stable platform for a high-fidelity implementation of genuinely trace-free counterfactual communication, allowing us to actively tune the number of steps in the Zeno measurement, and achieve a bit error probability below 1%, with neither post-selection nor a weak trace. Our demonstration shows how our programmable nanophotonic processor could be applied to more complex counterfactual tasks and quantum information protocols.Comment: 6 pages, 4 figure

    Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices

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    A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. The observed impact of disorder on the conductivity provides an alternative route to reduce the thermal conductivity of QDSLs. The results of this work have implications for the development of highly efficient thermoelectric materials and on-chip nanocooling devices

    Strain analysis from M-edge resonant inelastic X-ray scattering of nickel oxide films

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    Electronic structure modifications due to strain are an effective method for tailoring nano-scale functional materials. Demonstrated on nickel oxide (NiO) thin films, Resonant Inelastic X-ray Scattering (RIXS) at the transition-metal M2,3-edge is shown to be a powerful tool for measuring the electronic structure modification due to strain in the near-surface region. Analyses from the M2,3-edge RIXS in comparison with dedicated crystal field multiplet calculations show distortions in 40 nm NiO grown on a magnesium oxide (MgO) substrate (NiO/MgO) similar to those caused by surface relaxation of bulk NiO. The films of 20 and 10 nm NiO/MgO show slightly larger differences from bulk NiO. Quantitatively, the NiO/MgO samples all are distorted from perfect octahedral (Oh) symmetry with a tetragonal parameter Ds of about −0.1 eV, very close to the Ds distortion from octahedral (Oh) symmetry parameter of −0.11 eV obtained for the surface-near region from a bulk NiO crystal. Comparing the spectra of a 20 nm film of NiO grown on a 20 nm magnetite (Fe3O4) film on a MgO substrate (NiO/Fe3O4/MgO) with the calculated multiplet analyses, the distortion parameter Ds appears to be closer to zero, showing that the surface-near region of this templated film is less distorted from Oh symmetry than the surface-near region in bulk NiO. Finally, the potential of M2,3-edge RIXS for other investigations of strain on electronic structure is discussed

    Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices

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    A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. The observed impact of disorder on the conductivity provides an alternative route to reduce the thermal conductivity of QDSLs. The results of this work have implications for the development of highly efficient thermoelectric materials and on-chip nanocooling devices
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