Degradation studies of InAs/GaAs QD lasers grown on Si

Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength

QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots

The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100°C

Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs

We report magnetotransport measurements of InSb/Al1-xInxSb modulation doped quantum well (QW) structures and the extracted transport ( ) tt and quantum (tq) lifetime of carriers at low temperature (<2K.) We consider conventional transport lifetimes over a range of samples with different doping levels and carrier densities, and deduce different transport regimes dependent on QW state filling calculated from self-consistent Schrödinger–Poisson modelling. For samples where only the lowest QW subband is occupied at electron densities of 2.13 10 ´ 11 cm−2 and 2.54 10 ´ 11 cm−2 quantum lifetimes of tq » 0.107 ps, and tq » 0.103 ps are extracted from Shubnikov–de Haas oscillations below a magnetic field of 0.8 T. The extracted ratios of transport to quantum lifetimes, t t t q » 17 and t t t q » 20 are similar to values reported in other binary QW two-dimensional electron gas systems, but are inconsistent with predictions from transport modelling which assumes that remote ionized donors are the dominant scattering mechanism. We find the low t t t q ratio and the variation in transport mobility with carrier density cannot be explained by reasonable levels of background impurities or well width fluctuations. Thus, there is at least one additional scattering mechanism unaccounted for, most likely arising from structural defects

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 μm are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions

Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

We report the observation of a thermally activated resonant tunnelling feature in the current?voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to the alignment of the n = 1 confined states of the two quantum wells within the active region. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of device transport and charge accumulation as a function of temperature is critical. With rising sample temperature, the tunnelling current of the observed low voltage resonant feature increases in magnitude showing a small negative differential resistance region which is discernible even at 293 K and is unique to multiple barrier devices. This behaviour is not observed in conventional double barrier resonant tunnelling structures where the transmission coefficient at the Fermi energy is predominantly controlled by an electric field, whereas in TBRTS it is strongly controlled by the 2D to 2D state alignment

Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells

Recent reports of magnetotransport measurements of InSb/Al 1-x In x Sb quantum well structures at low temperature (3 K) have shown the need for inclusion of a new scattering mechanism not present in traditional transport lifetime models. Observations and analysis of characteristic surface structures using differential interference contrast DIC (Nomarski) optical imaging have extracted representative average grain feature sizes for this surface structure and shown these features to be the limiting low temperature scattering mechanism. We have subsequently modelled the potential profile of these surface structures using Landauer-Büttiker tunnelling calculations and a combination of a Monte-Carlo simulation and Drude model for mobility. This model matches experimentally measured currents and mobilities at low temperatures, giving a range of possible barrier heights and widths, as well modelling the theoretical trend in mobility with temperature

Addressing key issues in the consanguinity-related risk of autosomal recessive disorders in consanguineous communities: lessons from a qualitative study of British Pakistanis

Currently there is no consensus regarding services required to help families with consanguineous marriages manage their increased genetic reproductive risk. Genetic services for communities with a preference for consanguineous marriage in the UK remain patchy, often poor. Receiving two disparate explanations of the cause of recessive disorders (cousin marriage and recessive inheritance) leads to confusion among families. Further, the realisation that couples in non-consanguineous relationships have affected children leads to mistrust of professional advice. British Pakistani families at-risk for recessive disorders lack an understanding of recessive disorders and their inheritance. Such an understanding is empowering and can be shared within the extended family to enable informed choice. In a three-site qualitative study of British Pakistanis, we explored family and health professional perspectives on recessively inherited conditions. Our findings suggest, first, that family networks hold strong potential for cascading genetic information, making the adoption of a family centred approach an efficient strategy for this community. However, this is dependent on provision of high quality and timely information from health care providers. Secondly, families’ experience was of ill-coordinated and time-starved services, with few having access to specialist provision from Regional Genetics Services; these perspectives were consistent with health professionals’ views of services. Thirdly, we confirm previous findings that genetic information is difficult to communicate and comprehend, further complicated by the need to communicate the relationship between cousin marriage and recessive disorders. A communication tool we developed and piloted is described and offered as a useful resource for communicating complex genetic information

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

Vertical cavity surface emitting laser (VCSEL) devices and arrays are increasingly important in meeting the demands of today’s wireless communication and sensing systems. Understanding the origin of non-uniform wet thermal oxidation across large-area VCSEL wafers is a crucial issue to ensure highly reliable, volume-manufactured oxide-confined VCSEL devices. As VCSEL wafer diameters approach 200 mm, germanium (Ge) is emerging as an alternative substrate solution. To this end, we investigate the uniformity of 940 nm-emitting VCSEL performance across 150 mm diameter GaAs- and Ge-substrates, comparing the oxidation method in each case. Nominally identical epitaxial structures are used to evaluate the strain induced wafer bow for each substrate type with Ge exhibiting a reduction of over 100 μm in the peak-to-valley distortion when compared with GaAs. This wafer bow is found to be the principal cause of centre-to-edge oxidation non-uniformity when utilising a conduction-heated chuck furnace, in comparison to a convection-heated tube furnace. Using on-wafer testing of threshold current, differential resistance, and emission wavelength, device performance is demonstrated for the first time across a 150 mm Ge wafer, and is shown to be comparable to performance on GaAs substrates, when the effects of oxidation uniformity are removed. These results provide evidence that there is a realistic path to manufacturing high yield VCSELs, over wafer diameters approaching those used in Si-photonics, via Ge substrates

Gain measurements on VCSEL material using segmented contact technique

We report direct measurements of the optical gain on vertical-cavity surface-emitting laser (VCSEL) material using a stripe-length method featuring segmented contacts. We utilise the similarity of the in-plane transverse electric (TE) polarised matrix element and that of the VCSEL lasing mode and a simple method to reduce round trip effects. The confinement factor is determined from cold-cavity simulations of the in-plane TE polarised slab waveguide mode and used to convert the measured in-plane modal gain into the vertical-cavity modal gain, as required for the VCSEL structure. This gives a threshold material gain of 1440 ± 140 cm−1 at 30 °C for this structure. A comparison with the threshold material gain values determined from the lasing condition, where internal optical losses due to doping induced absorption is included using parameters taken from the literature, indicates the presence of an additional source of optical loss in the experiment which increases the threshold material gain by ∼450 cm−1. A best fit is obtained by increasing the optical loss in the n-DBR (distributed Bragg reflectors) layers to 40 cm−1, which is consistent with previous work on additional scattering losses due to interface roughening in the n-DBR layers. To further demonstrate the utility of this method for rapid optimisation, the gain-peak wavelength is measured directly, and its temperature dependence is compared to the lasing wavelength

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

InAs quantum dot ridge waveguide lasers comprising single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised, to demonstrate capability for optoelectronic-integrated-circuits. Simulations of an MMIR show high values of fundamental mode reflectivity ( >80%) and good selectivity against higher order modes. Deep-etched MMIR lasers fabricated with 0.5 mm long cavities have a threshold current of 24 mA, compared to 75 mA for standard Fabry–Perot cleaved–cleaved FP-RWG lasers of the same length, both at 25 °C, and 56 mA compared to 102 mA at 55 °C. MMIR lasers exhibit stable ground state operation up to 50 °C and show promise as small footprint sources for integrated photonics