160 research outputs found

    Jointly Optimal Spatial Channel Assignment and Power Allocation for MIMO SWIPT Systems

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    The joint design of spatial channel assignment and power allocation in multiple input multiple output (MIMO) systems capable of simultaneous wireless information and power transfer is studied. Assuming availability of channel state information at both communications ends, we maximize the harvested energy at the multi-antenna receiver, while satisfying a minimum information rate requirement for the MIMO link. We first derive the globally optimal eigenchannel assignment and power allocation design, and then present a practically motivated tight closed-form approximation for the optimal design parameters. Selected numerical results verify the validity of the optimal solution and provide useful insights on the proposed designs as well as the Pareto-optimal rate-energy tradeoff

    Energy-Aware mode selection for throughput maximization in RF-Powered D2D Communications

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    Doubly-near-far problem in RF-powered networks can be mitigated by choosing appropriate device-To-device (D2D) communication mode and implementing energy-efficient information transfer (IT). In this work, we present a novel RF energy harvesting architecture where each transmitting-receiving user pair is allocated a disjoint channel for its communication which is fully powered by downlink energy transfer (ET) from hybrid access point (HAP). Considering that each user pair can select either D2D or cellular mode of communication, we propose an optimized transmission protocol controlled by the HAP that involves harvested energy-Aware jointly optimal mode selection (MS) and time allocation (TA) for ET and IT to maximize the sum-Throughput. Jointly global optimal solutions are derived by efficiently resolving the combinatorial issue with the help of optimal MS strategy for a given TA for ET. Closed-form expressions for the optimal TA in D2D and cellular modes are also derived to gain further analytical insights. Numerical results show that the joint optimal MS and TA, which significantly outperforms the benchmark schemes in terms of achievable RF-powered sum-Throughput, is closely followed by the optimal TA scheme for D2D users. In fact, about 2/3 fraction of the total user pairs prefer to follow the D2D mode for efficient RF-powered IT

    Distributed Sum-Rate Maximization of Cellular Communications with Multiple Reconfigurable Intelligent Surfaces

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    The technology of Reconfigurable Intelligent Surfaces (RISs) has lately attracted considerable interest from both academia and industry as a low-cost solution for coverage extension and signal propagation control. In this paper, we study the downlink of a multi-cell wideband communication system comprising single-antenna Base Stations (BSs) and their associated single-antenna users, as well as multiple passive RISs. We assume that each BS controls a separate RIS and performs Orthogonal Frequency Division Multiplexing (OFDM) transmissions. Differently from various previous works where the RIS unit elements are considered as frequency-flat phase shifters, we model them as Lorentzian resonators and present a joint design of the BSs' power allocation, as well as the phase profiles of the multiple RISs, targeting the sum-rate maximization of the multi-cell system. We formulate a challenging distributed nonconvex optimization problem, which is solved via successive concave approximation. The distributed implementation of the proposed design is discussed, and the presented simulation results showcase the interplay of the various system parameters on the sum rate, verifying the performance boosting role of RISs.Comment: 5 pages, 1 figure. Presented in IEEE SPAWC 202

    Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

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    The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical-cavity semiconductor optical amplifier (THH-VCSOA) is a bidirectional light-emitting and light-absorbing heterojunction device. The device contains 11 Ga0.35In0.65 N0.02As0.08/GaAs MQWs in its intrinsic active region which is enclosed between six pairs of AlAs/GaAs top distributed Bragg reflectors (DBRs) and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The THH-VCSOA is fabricated using a four-contact configuration. The wavelength conversion with amplification is achieved by the appropriate biasing of the absorption and emission regions within the device. Absorption and emission regions may be reversed by changing the polarity of the applied voltage. Emission wavelength is about 1,300 nm and a maximum gain at this wavelength is around 5 dB at T = 300 K

    Benzo‐extended cyclohepta[def]fluorene derivatives with very low‐lying triplet states

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    Open-shell non-alternant polycyclic hydrocarbons (PHs) are attracting increasing attention due to their promising applications in organic spintronics and quantum computing. Herein we report the synthesis of three cyclohepta[def]fluorene-based diradicaloids (1–3), by fusion of benzo rings on its periphery for the thermodynamic stabilization, as evidenced by multiple characterization techniques. Remarkably, all of them display a very narrow optical energy gap (Egopt=0.52–0.69 eV) and persistent stability under ambient conditions (t1/2=11.7–33.3 h). More importantly, this new type of diradicaloids possess a low-lying triplet state with an extremely small singlet–triplet energy gap, as low as 0.002 kcal mol−1, with a clear dependence on the molecular size. This family of compounds thus offers a new route to create non-alternant open-shell PHs with high-spin ground states, and opens up novel possibilities and insights into understanding the structure–property relationships

    Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

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    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain

    Wnt5a induces ROR1 to complex with HS1 to enhance migration of chronic lymphocytic leukemia cells.

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    ROR1 (receptor tyrosine kinase-like orphan receptor 1) is a conserved, oncoembryonic surface antigen expressed in chronic lymphocytic leukemia (CLL). We found that ROR1 associates with hematopoietic-lineage-cell-specific protein 1 (HS1) in freshly isolated CLL cells or in CLL cells cultured with exogenous Wnt5a. Wnt5a also induced HS1 tyrosine phosphorylation, recruitment of ARHGEF1, activation of RhoA and enhanced chemokine-directed migration; such effects could be inhibited by cirmtuzumab, a humanized anti-ROR1 mAb. We generated truncated forms of ROR1 and found its extracellular cysteine-rich domain or kringle domain was necessary for Wnt5a-induced HS1 phosphorylation. Moreover, the cytoplamic, and more specifically the proline-rich domain (PRD), of ROR1 was required for it to associate with HS1 and allow for F-actin polymerization in response to Wnt5a. Accordingly, we introduced single amino acid substitutions of proline (P) to alanine (A) in the ROR1 PRD at positions 784, 808, 826, 841 or 850 in potential SH3-binding motifs. In contrast to wild-type ROR1, or other ROR1P→︀A mutants, ROR1P(841)A had impaired capacity to recruit HS1 and ARHGEF1 to ROR1 in response to Wnt5a. Moreover, Wnt5a could not induce cells expressing ROR1P(841)A to phosphorylate HS1 or activate ARHGEF1, and was unable to enhance CLL-cell motility. Collectively, these studies indicate HS1 plays an important role in ROR1-dependent Wnt5a-enhanced chemokine-directed leukemia-cell migration

    Wafer-Bonded Active/Passive Vertically Coupled Microring Lasers

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    We summarize the results of a European Project entitled WAPITI (Waferbonding and Active Passive Integration Technology and Implementation) dealing with the fabrication and investigation of active/passive vertically coupled ring resonators, wafer bonded on GaAs, and based on full wafer technology. The concept allows for the integration of an active ring laser vertically coupled to a transparent bus waveguide. All necessary layers are grown in a single epitaxial run so that the critical coupling gap can be precisely controlled with the high degree of accuracy of epitaxial growth. One key challenge of the project was to establish a reliable wafer bonding technique using BCB as an intermediate layer. In intensive tests we investigated and quantified the effect of unavoidable shrinkage of the BCB on the overall device performance. Results on cw-operation, low threshold currents of about 8 mA, high side-mode suppression ratios in the range of 40 dB and large signal modulation bandwidths of up to 5 GHz for a radius of 40 μm shows the viability of the integration process
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