Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride

Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information application. We observe spectral linewidths of hBN emitter narrower than 1 GHz while the emitter experiences spectral diffusion. Temporal photoluminescence measurements reveals an average spectral diffusion time of around 100 ms. On-resonance photon antibunching measurement is also realized. Our results shed light on the potential use of quantum emitters from hBN in nanophotonics and quantum information

Feedback Cooling of a Single Neutral Atom

We demonstrate feedback cooling of the motion of a single rubidium atom trapped in a high-finesse optical resonator to a temperature of about 160 \mu K. Time-dependent transmission and intensity-correlation measurements prove the reduction of the atomic position uncertainty. The feedback increases the 1/e storage time into the one second regime, 30 times longer than without feedback. Feedback cooling therefore rivals state-of-the-art laser cooling, but with the advantages that it requires less optical access and exhibits less optical pumping.Comment: 5 pages, 4 figure

Nanodiamonds carrying quantum emitters with almost lifetime-limited linewidths

Nanodiamonds (NDs) hosting optically active defects are an important technical material for applications in quantum sensing, biological imaging, and quantum optics. The negatively charged silicon vacancy (SiV) defect is known to fluoresce in molecular sized NDs (1 to 6 nm) and its spectral properties depend on the quality of the surrounding host lattice. This defect is therefore a good probe to investigate the material properties of small NDs. Here we report unprecedented narrow optical transitions for SiV colour centers hosted in nanodiamonds produced using a novel high-pressure high-temperature (HPHT) technique. The SiV zero-phonon lines were measured to have an inhomogeneous distribution of 1.05 nm at 5 K across a sample of numerous NDs. Individual spectral lines as narrow as 354 MHz were measured for SiV centres in nanodiamonds smaller than 200 nm, which is four times narrower than the best SiV line previously reported for nanodiamonds. Correcting for apparent spectral diffusion yielded a homogeneous linewith of about 200 MHz, which is close to the width limit imposed by the radiative lifetime. These results demonstrate that the direct HPHT synthesis technique is capable of producing nanodiamonds with high crystal lattice quality, which are therefore a valuable technical material

Tunable Fiber‐Cavity Enhanced Photon Emission from Defect Centers in hBN

Realization of quantum photonic devices requires coupling single quantum emitters to the mode of optical resonators. In this work, a hybrid system consisting of defect centers in few-layer hexagonal boron nitride (hBN) grown by chemical vapor deposition and a fiber-based Fabry–Pérot cavity is presented. The sub 10-nm thickness of hBN and its smooth surface enable efficient integration into the cavity mode. This hybrid platform is operated over a broad spectral range larger than 30 nm and its tuneability is used to explore different coupling regimes. Consequently, very large cavity-assisted signal enhancement up to 50-fold and strongly narrowed linewidths are achieved, which is owing to cavity funneling, a record for hBN-cavity systems. Additionally, an excitation and readout scheme is implemented for resonant excitation that allows to establish cavity-assisted photoluminescence excitation (PLE) spectroscopy. This work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies

Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes

Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material. In this work, we investigate the origins for the mechanical decoupling. Improved sample preparation enabled a reduced background and a 70-fold decrease of spectral diffusion which was so far the major drawback of defect center in hBN and allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This decoupling from phonons persists at room temperature and explains the observed Fourier Transform limited lines up to 300K. Furthermore, we investigate the dipole emission directionality and show a preferred photon emission through the side of the hBN flakes supporting the claim for an out-of-plane distortion of the defect center. Our work lays the foundation to a deeper understanding of the underlying physics for the persistence of Fourier-Transform limit lines up to room temperature. It furthermore provides a description on how to identify the mechanically isolated emitter within the large number of defect centers in hBN. Therefore, it paves the way for quantum optics applications with defect centers in hBN at room temperature.Comment: 9 pages, 5 figure

A Diamond-Photonics Platform Based on Silicon-Vacancy Centers in a Single Crystal Diamond Membrane and a Fiber-Cavity

We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to the mode of a fully-tunable, fiber-based, optical resonator. We demonstrate that introducing the thin ($\sim 200 \, \text{nm}$), single crystal diamond membrane into the mode of the resonator does not change the cavity properties, which is one of the crucial points for an efficient spin-photon interface. In particular, we observe constantly high Finesse values of up to $3000$ and a linear dispersion in the presence of the membrane. We observe cavity-coupled fluorescence froman ensemble of SiV$^{-}$ centers with an enhancement factor of $\sim 1.9$. Furthermore from our investigations we extract the ensemble absorption and extrapolate an absorption cross section of $(2.9 \, \pm \, 2) \, \cdot \, 10^{-12} \, \text{cm}^{2}$ for a single SiV$^{-}$ center, much higher than previously reported.Comment: 8 pages, 4 figure

Enhanced Spectral Density of a Single Germanium Vacancy Center in a Nanodiamond by Cavity-Integration

Color centers in diamond, among them the negatively-charged germanium vacancy (GeV$^-$), are promising candidates for many applications of quantum optics such as a quantum network. For efficient implementation, the optical transitions need to be coupled to a single optical mode. Here, we demonstrate the transfer of a nanodiamond containing a single ingrown GeV- center with excellent optical properties to an open Fabry-P\'erot microcavity by nanomanipulation utilizing an atomic force microscope. Coupling of the GeV- defect to the cavity mode is achieved, while the optical resonator maintains a high finesse of F = 7,700 and a 48-fold spectral density enhancement is observed. This article demonstrates the integration of a GeV- defect with a Fabry-P\'erot microcavity under ambient conditions with the potential to extend the experiments to cryogenic temperatures towards an efficient spin-photon platform.Comment: 6 pages, 3 figures. The article has been accepted by Applied Physics Letters. It is found at https://doi.org/10.1063/5.0156787. Added acknowledgment: S.S. acknowledges support of the Marie Curie ITN project LasIonDef (GA n.956387

Controlling all Degrees of Freedom of the Optical Coupling in Hybrid Quantum Photonics

Nanophotonic quantum devices can significantly boost light-matter interaction which is important for applications such as quantum networks. Reaching a high interaction strength between an optical transition of a spin system and a single mode of light is an essential step which demands precise control over all degrees of freedom of the optical coupling. While current devices have reached a high accuracy of emitter positioning, the placement process remains overall statistically, reducing the device fabrication yield. Furthermore, not all degrees of freedom of the optical coupling can be controlled limiting the device performance. Here, we develop a hybrid approach based on negatively-charged silicon-vacancy center in nanodiamonds coupled to a mode of a Si$_3$N$_4$-photonic crystal cavity, where all terms of the coupling strength can be controlled individually. We use the frequency of coherent Rabi-oscillations and line-broadening as a measure of the device performance. This allows for iterative optimization of the position and the rotation of the dipole with respect to individual, preselected modes of light. Therefore, our work marks an important step for optimization of hybrid quantum photonics and enables to align device simulations with real device performance.Comment: 20 pages, 7 figure