Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

International audienceWe report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor-liquid-solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu approximate to 601). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical I-V diode characteristics. Our approach can become an important new tool in the design of novel electronic components

Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications

We report here the growth and functional properties of silicon-based nanowhisker (NW) diodes produced by the vapor–liquid–solid process using a pulsed laser deposition technique. For the first time, we demonstrate that this method could be employed to control the size and shape of silicon NWs by using a two-component catalyst material (Au/Cu ≈ 60:1). During the NW growth, copper is distributed on the outer surface of the NW, whereas gold sticks as a droplet to its top. The length of NWs is defined by the total amount of copper in the catalyst alloy droplet. The measurements of the electrical transport properties revealed that in contact with the substrate, individual NWs demonstrate typical <i>I</i>–<i>V</i> diode characteristics. Our approach can become an important new tool in the design of novel electronic components

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1&minus;x/Ge/Fe3+xSi1&minus;x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Three-layer iron-rich Fe3+xSi1&minus;x/Ge/Fe3+xSi1&minus;x (0.2 &lt; x &lt; 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1&minus;x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1&minus;x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1&minus;x. The average lattice distortion and residual stress of the upper Fe3+xSi1&minus;x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of &minus;0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1&minus;x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1&minus;x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1&minus;x, which implies the epitaxial orientation relationship of Fe3+xSi1&minus;x (111)[0&minus;11] || Ge(111)[1&minus;10] || Fe3+xSi1&minus;x (111)[0&minus;11] || Si(111)[1&minus;10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms