Spin-polarized transport in a full magnetic pn tunnel junction

Simulations of the tunneling current as a function of voltage and temperature for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the applied bias, the magnetization, and the temperature on the diode. The tunneling magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly asymmetric doped diode, which leads to a large difference on the magnetization values between the p and n sidesThis work was supported by Spanish Government Grant Nos. TIN2007-67537-C03-01 and TEC2010-17320 and by Xunta de Galicia Grant Nos. DXIDI09TIC001CT and INCITE08PXIB206094PRS

Patoloxía dos cultivos

Actas do II Seminario Cultivando o Mar. O Grove, 10 e 11 de outubro de 199