Simulations of the tunneling current as a function of voltage and temperature for a Zener diode
where both sides are ferromagnetic have been performed. The current is evaluated as a function
of the applied bias, the magnetization, and the temperature on the diode. The tunneling
magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly
asymmetric doped diode, which leads to a large difference on the magnetization values between the
p and n sidesThis work was supported by Spanish Government Grant Nos. TIN2007-67537-C03-01 and TEC2010-17320 and by Xunta de Galicia Grant Nos. DXIDI09TIC001CT and INCITE08PXIB206094PRS