Bi2Te_xSe_y series studied by resistivity and thermopower

We study the detailed temperature and composition dependence of the resistivity, $\rho(T)$, and thermopower, $S(T)$, for a series of layered bismuth chalcogenides Bi$_2$Te$_{3-x}$Se$_x$, and report the stoichiometry dependence of the optical band gap. In the resistivity of the most compensated member, Bi$_2$Te$_{2.1}$Se$_{0.9}$, we find a low-temperature plateau whose onset temperature correlates with the high-temperature activation energy. For the whole series $S(T)$ can be described by a simple model for an extrinsic semiconductor. By substituting Se for Te, the Fermi level is tuned from the valence band into the conduction band. The maximum values of $S(T)$, bulk band gap as well the activation energy in the resistivity are found for $x \approx 0.9$

Aplicación de tecnologías de valuación de empresas : Caso Agrometal SAI

El trabajo tiene como objetivo determinar el valor de la Firma AGROMETAL SAI a través de la aplicación de dos metodologías: a) el descuento de los flujos de fondos libres, y b) Múltiplos comparables. En el desarrollo del trabajo se efectuó primeramente una descripción de la empresa objetivo para luego analizar en detalle el sector de la maquinaria agrícola. Posteriormente se presentaron los cálculos propiamente dichos para efectuar la valuación por el primero de los métodos seleccionados, que es a través del descuento de los flujos de fondos libres. Este método persigue la búsqueda de un valor intrínseco de una empresa a través de tomar en consideración: i) la generación de flujos de caja futuros, ii) un valor terminal, iii) una tasa de descuento apropiada y iv) un horizonte de planificación determinado. Por último, se desarrolló una metodología de valuación alternativa para la firma, como es la utilización de los múltiplos de empresas comparables.Facultad de Ciencias Económica

Optical properties of Bi2Te2Se at ambient and high pressure

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm^{-1} is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.Comment: 8 pages, 7 figure

Indirect-to-direct band-gap crossover in few-layer MoTe2_2

We study the evolution of the band-gap structure in few-layer MoTe$_2$ crystals, by means of low-temperature micro-reflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that, in complete analogy with other semiconducting transition metal dichalchogenides (TMDs), the dominant PL emission peaks originate from direct transitions associated to recombination of excitons and trions. When we follow the evolution of the PL intensity as a function of layer thickness, however, we observe that MoTe$_2$ behaves differently from other semiconducting TMDs investigated earlier. Specifically, the exciton PL yield (integrated PL intensity) is identical for mono and bilayer and it starts decreasing for trilayers. A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe$_2$ being direct band-gap semiconductors, with tetralayer MoTe$_2$ being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap. We discuss the relevance of our findings for experiments of fundamental interest and possible future device applications.Comment: 20 pages, 4 Figure

Method and system for the automatic recognition of lesions in a set of breast magnetic resonance images

A method of identification of potential lesions of a breast from tomographic image datasets of a chest region of a patient, the- datasets comprising a plurality of voxels (2) each having an intensity value, the images including a region of interest (10) which comprises at least one breast (6). The method comprises the steps of: acquiring a set of images after the administration of a contrast agent to the patient; normalizing (254) the intensity of voxels (2) belonging to the region of interest (10) of the acquired images according to at least one normalization factor; classifying (255) each of the normalized voxels (2) on the basis of a classification criterion, in such a way as to identify regions (40) representing potential lesions. The method is characterized in that the normalization factor is based on normalization voxels (2) corresponding to an anatomical structure (34), the normalization voxels (2) having intensity values enhanced due to the administration of the contrast agent

Validation of the angular measurements of a new inertial-measurement-unit based rehabilitation system: comparison with state-of-the-art gait analysis

Background: Several rehabilitation systems based on inertial measurement units (IMU) are entering the market for the control of exercises and to measure performance progression, particularly for recovery after lower limb orthopaedic treatments. IMU are easy to wear also by the patient alone, but the extent to which IMU's malpositioning in routine use can affect the accuracy of the measurements is not known. A new such system (Riablo™, CoRehab, Trento, Italy), using audio-visual biofeedback based on videogames, was assessed against state-of-the-art gait analysis as the gold standard.Methods. The sensitivity of the system to errors in the IMU's position and orientation was measured in 5 healthy subjects performing two hip joint motion exercises. Root mean square deviation was used to assess differences in the system's kinematic output between the erroneous and correct IMU position and orientation.In order to estimate the system's accuracy, thorax and knee joint motion of 17 healthy subjects were tracked during the execution of standard rehabilitation tasks and compared with the corresponding measurements obtained with an established gait protocol using stereophotogrammetry.Results: A maximum mean error of 3.1 ± 1.8 deg and 1.9 ± 0.8 deg from the angle trajectory with correct IMU position was recorded respectively in the medio-lateral malposition and frontal-plane misalignment tests. Across the standard rehabilitation tasks, the mean distance between the IMU and gait analysis systems was on average smaller than 5°.Conclusions: These findings showed that the tested IMU based system has the necessary accuracy to be safely utilized in rehabilitation programs after orthopaedic treatments of the lower limb

Categorical Foundations of Explainable AI

Explainable AI (XAI) aims to address the human need for safe and reliable AI systems. However, numerous surveys emphasize the absence of a sound mathematical formalization of key XAI notions -- remarkably including the term ``\textit{explanation}'' which still lacks a precise definition. To bridge this gap, this paper presents the first mathematically rigorous definitions of key XAI notions and processes, using the well-funded formalism of Category theory. We show that our categorical framework allows to: (i) model existing learning schemes and architectures, (ii) formally define the term ``explanation'', (iii) establish a theoretical basis for XAI taxonomies, and (iv) analyze commonly overlooked aspects of explaining methods. As a consequence, our categorical framework promotes the ethical and secure deployment of AI technologies as it represents a significant step towards a sound theoretical foundation of explainable AI