Understanding Differences in the Crystallization Kinetics between One-Step Slot-Die Coating and Spin Coating of MAPbI₃ Using Multimodal In Situ Optical Spectroscopy

To develop a detailed understanding about halide perovskite processing from solution, the crystallization processes are investigated during spin coating and slot-die coating of MAPbI3 at different evaporation rates by simultaneous in situ photoluminescence, light scattering, and absorption measurements. Based on the time evolution of the optical parameters it is found that for both processing methods initially solvent-complex-structures form, followed by perovskite crystallization. The latter proceeds in two stages for spin coating, while for slot-die coating only one perovskite crystallization phase occurs. For both processing methods, it is found that with increasing evaporation rates, the crystallization kinetics of the solvent-complex structure and the perovskite crystallization remain constant on a relative time scale, whereas the duration of the second perovskite crystallization in spin coating increases. This second perovskite crystallization appears restricted due to differences in solvent-complex phase morphologies from which the perovskite forms. The work emphasizes the importance of the exact precursor state properties on the perovskite formation. It further demonstrates that detailed analyses of multimodal optical in situ spectroscopy allows gaining a fundamental understanding of the crystallization processes that take place during solution processing of halide perovskites, independent from the specific processing method

Data retention in organic ferroelectric resistive switches

Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the apparent retention time and a suitable protocol is identified. Second, it is shown by experimental and theoretical methods that partial depolarization of the ferroelectric is the major mechanism responsible for imperfect data retention. This depolarization occurs in close vicinity to the semiconductor-ferroelectric interface, is driven by energy minimization and is inherently present in this type of phase-separated polymer blends. Third, a direct relation between data retention and the charge injection barrier height of the resistive switch is demonstrated experimentally and numerically. Tuning the injection barrier height allows to improve retention by many orders of magnitude in time, albeit at the cost of a reduced on/off ratio. (c) 2016 Elsevier B.V. All rights reserved.Funding Agencies|European Community [248092]</p

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.Funding Agencies|Research Grant of Pukyong National University [CD20151148]</p

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.Funding Agencies|Research Grant of Pukyong National University [CD20151148]</p

3D-Morphology Reconstruction of Nanoscale Phase-Separation in Polymer Memory Blends

In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase-separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed. (c) 2015 Wiley Periodicals, Inc.Funding Agencies|European Communitys Seventh Framework Programme under MOMA project [248092]</p

A high-resolution large-area detector for quality assurance in radiotherapy.

Hadron therapy is an advanced radiation modality for treating cancer, which currently uses protons and carbon ions. Hadrons allow for a highly conformal dose distribution to the tumour, minimising the detrimental side-effects due to radiation received by healthy tissues. Treatment with hadrons requires sub-millimetre spatial resolution and high dosimetric accuracy. This paper discusses the design, fabrication and performance tests of a detector based on Gas Electron Multipliers (GEM) coupled to a matrix of thin-film transistors (TFT), with an active area of 60 × 80 mm2 and 200 ppi resolution. The experimental results show that this novel detector is able to detect low-energy (40 kVp X-rays), high-energy (6 MeV) photons used in conventional radiation therapy and protons and carbon ions of clinical energies used in hadron therapy. The GEM-TFT is a compact, fully scalable, radiation-hard detector that measures secondary electrons produced by the GEMs with sub-millimetre spatial resolution and a linear response for proton currents from 18 pA to 0.7 nA. Correcting known detector defects may aid in future studies on dose uniformity, LET dependence, and different gas mixture evaluation, improving the accuracy of QA in radiotherapy