Vibrational properties of ZnO, group III-nitrides and dilute nitride alloys

[spa] Esta tesis consiste en el estudio de las propiedades vibracionales de materiales de interés para la fabricación de dispositivos optoelectrónicos, operando en distintos rangos espectrales, desde ultravioleta hasta el infrarrojo

Aproximación de un nuevo agregado monetario en moneda nacional para la economía peruana

Clasificación JEL:

Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled modes LOPCMs in a series of heavily Se-doped, n-type GaAs1−xNx epilayers with x 0.4%. We perform a line shape analysis of the LOPCM spectra to estimate the optical effective mass, mopt , and the scattering time of the conduction electrons in GaAsN. We use these results to evaluate an effective carrier mobility for our samples. The values thus obtained, which we compare with measured electron Hall mobilities, indicate that the x-dependence of the mobility in GaAs1−xNx is dominated by the scattering time, rather than by the variation of the electron effective mass. The Raman analysis yields mopt values that are lower than those obtained from the band anticrossing model. © 2008 American Institute of Physics.This work is supported by the Spanish Government Projects MAT 2004-0664 and MAT2007-63617, and Ramon y Cajal Program and the EPSRC, United Kingdom. 1M. Henini, Dilute Nitride Semiconductors Elsevier Science, AmsterdamPeer reviewe

Far-infrared transmission in GaN,AlN and AlGaN thin films grown by molecular beam epitaxy

We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and AlxGa1−xN (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscop

Directional quantum dot emission by soft-stamping on silicon Mie resonators

We present a soft-stamping method to selectively print a homogenous layer of CdSeTe/ZnS core–shell quantum dots (QDs) on top of an array of Si nanocylinders with Mie-type resonant modes. Using this new method, we gain accurate control of the quantum dot's angular emission through engineered coupling of the QDs to these resonant modes. Using numerical simulations we show that the emission into or away from the Si substrate can be precisely controlled by the QD position on the nanocylinder. QDs centered on a 400 nm diameter nanocylinder surface show 98% emission directionality into the Si substrate. Alternatively, for homogenous ensembles placed over the nanocylinder top-surface, the upward emission is enhanced 10-fold for 150 nm diameter cylinders. Experimental PL intensity measurements corroborate the simulated trends with cylinder diameter. PL lifetime measurements reflect well the variations of the local density of states at the QD position due to coupling to the resonant cylinders. These results demonstrate that the soft imprint technique provides a unique manner to directly integrate optical emitters with a wide range of nanophotonic geometries, with potential applications in LEDs, luminescent solar concentrators, and up- and down-conversion schemes for improved photovoltaics

Combined Area of Left and Right Atria May Outperform Atrial Volumes as a Predictor of Recurrences after Ablation in Patients with Persistent Atrial Fibrillation—A Pilot Study

Background and Objectives: Left atrial (LA) remodelling and dilatation predicts atrial fibrillation (AF) recurrences after catheter ablation. However, whether right atrial (RA) remodelling and dilatation predicts AF recurrences after ablation has not been fully evaluated. Materials and Methods: This is an observational study of 85 consecutive patients (aged 57 ± 9 years; 70 [82%] men) who underwent cardiac magnetic resonance before first catheter ablation for AF (40 [47.1%] persistent AF). Four-chamber cine-sequence was selected to measure LA and RA area, and ventricular end-systolic image phase to obtain atrial 3D volumes. The effect of different variables on event-free survival was investigated using the Cox proportional hazards model. Results: In patients with persistent AF, combined LA and RA area indexed to body surface area (AILA + RA) predicted AF recurrences (HR = 1.08, 95% CI 1.00-1.17, p = 0.048). An AILA + RA cut-off value of 26.7 cm2/m2 had 72% sensitivity and 73% specificity for predicting recurrences in patients with persistent AF. In this group, 65% of patients with AILA + RA > 26.7 cm2/m2 experienced AF recurrence within 2 years of follow-up (median follow-up 11 months), compared to 25% of patients with AILA + RA ≤ 26.7 cm2/m2 (HR 4.28, 95% CI 1.50-12.22; p = 0.007). Indices of LA and RA dilatation did not predict AF recurrences in patients with paroxysmal AF. Atrial 3D volumes did not predict AF recurrences after ablation. Conclusions: In this pilot study, the simple measurement of AILA + RA may predict recurrences after ablation of persistent AF, and may outperform measurements of atrial volumes. In paroxysmal AF, atrial dilatation did not predict recurrences. Further studies on the role of RA and LA remodelling are needed