Crystallographically Determined Etching and Its Relevance to the Metal-Assisted Catalytic Etching (MACE) of Silicon Powders

Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 as oxidant has been performed on single-crystal Si wafers, single-crystal electronics grade Si powders, and polycrystalline metallurgical grade Si powders. The temperature dependence of the etch kinetics has been measured over the range 5–37◦C. Etching is found to proceed preferentially in a h001i direction with an activation energy of ∼0.4 eV on substrates with (001), (110), and (111) orientations. A quantitative model to explain the preference for etching in the h001i direction is developed and found to be consistent with the measured activation energies. Etching of metallurgical grade powders produces particles, the surfaces of which are covered primarily with porous silicon (por-Si) in the form of interconnected ridges. Silicon nanowires (SiNW) and bundles of SiNW can be harvested from these porous particles by ultrasonic agitation. Analysis of the forces acting between the metal nanoparticle catalyst and the Si particle demonstrates that strongly attractive electrostatic and van der Waals interactions ensure that the metal nanoparticles remain in intimate contact with the Si particles throughout the etch process. These attractive forces draw the catalyst toward the interior of the particle and explain why the powder particles are etched equivalently on all the exposed faces

Nanoindentation properties of shock-compressed single crystal Magnesium

The residual mechanical properties acquired from shock-compressed solids are often times dramatically different from those received under quasi-static conditions. This suggests that the deformation mechanisms present during shock compression may be significantly different than those seen under quasi-static conditions. Please click Additional Files below to see the full abstract

Regenerative Electroless Etching of Silicon

Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1, which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2. This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2O5 in HF(aq) as Ox1 and H2O2(aq) as Ox2 with Si powder and wafers

Hierarchical Porous Silicon and Porous Silicon Nanowires Produced with Regenerative Electroless Etching (ReEtching) and Metal Assisted Catalytic Etching (MACE)

ReEtching produces nanostructured silicon when a catalytic agent, e.g. dissolved V2O5, is used to facilitate etching between Si and H2O2. H2O2 regenerates dissolved V in a 5+ oxidation state, which initiates etching by injecting holes into the Si valence band. Independent control over the extent of reaction (controlled by the amount of H2O2 added) and the rate of reaction (controlled by the rate at which H2O2 is pumped into the etchant solution) allows us to porosify Si substrates of arbitrary size, shape and doping, including wafers, single-crystal powders, polycrystalline powders, metallurgical grade powder, Si nanowires, Si pillars and Si powders that have been textured with metal-assisted catalytic etching (MACE). Similarly, improved control over the nucleation and etching in MACE is achieved by pumped delivery of reagents. Nanowires are not produced directly by MACE of powders, rather they form when a porosified layers is cleaved by capillary forces or sonication

A Nanoindentation Study of the Plastic Deformation and Fracture Mechanisms in Single-Crystalline CaFe2As2

The plastic deformation and fracture mechanisms in single-crystalline CaFe2As2 has been studied using nanoindentation and density functional theory simulations. CaFe2As2 single crystals were grown in a Sn-flux, resulting in homogeneous and nearly defect-free crystals. Nanoindentation along the [001] direction produces strain bursts, radial cracking, and lateral cracking. Ideal cleavage simulations along the [001] and [100] directions using density functional theory calculations revealed that cleavage along the [001] direction requires a much lower stress than cleavage along the [100] direction. This strong anisotropy of cleavage strength implies that CaFe2As2 has an atomic-scale layered structure, which typically exhibits lateral cracking during nanoindentation. This special layered structure results from weak atomic bonding between the (001) Ca and Fe2As2 layers

Low-Load Metal-Assisted Catalytic Etching Produces Scalable Porosity in Si Powders

The recently discovered low-load metal-assisted catalytic etching (LL-MACE) creates nanostructured Si with controllable and variable characteristics that distinguish this technique from the conventional high-load variant. LL-MACE employs 150 times less metal catalyst and produces porous Si instead of Si nanowires. In this work, we demonstrate that some of the features of LL-MACE cannot be explained by the present understanding of MACE. With mechanistic insight derived from extensive experimentation, it is demonstrated that (1) the method allows the use of not only Ag, Pd, Pt, and Au as metal catalysts but also Cu and (2) judicious combinations of process parameters such as the type of metal, Si doping levels, and etching temperatures facilitate control over yield (0.065−88%), pore size (3−100 nm), specific surface area (20−310 m2·g−1), and specific pore volume (0.05−1.05 cm3·g−1). The porous structure of the product depends on the space-charge layer, which is controlled by the Si doping and the chemical identity of the deposited metal. The porous structure was also dependent on the dynamic structure of the deposited metal. A distinctive comet-like structure of metal nanoparticles was observed after etching with Cu, Ag, Pd, and, in some cases, Pt; this structure consisted of 10−50 nm main particles surrounded by smaller (\u3c5 nm) nanoparticles. With good scalability and precise control of structural properties, LL-MACE facilitates Si applications in photovoltaics, energy storage, biomedicine, and water purification