1,571 research outputs found
Factors that constitute a good cognitive behavioural treatment manual: A Delphi study
Cognitive behavioural treatment manuals have increased in frequency, purpose and impact over the last 40 years. Despite numerous papers on the topic, few empirical studies regarding the constitution of treatment manuals have been conducted. A Delphi study examining the factors that constitute a good cognitive behavioural treatment manual is presented. This study generated a consensus of opinion of factors that therapists and researchers should consider when developing and appraising treatment manuals for cognitive behavioural interventions. Limitations of the study and the potential relevance of the research are discussed
Ariel - Volume 2 Number 2
Editors
Delvyn C. Case, Jr.
Paul M. Fernhoff
News Editors
Richard Bonanno
Daniel B. Gould
Ronald A. Hoffman
Lay-Out Editor
Carol Dolinskas
Sports Editor
James J. Nocon
Contributing Editors
MichaeI J. Blecker
Lin Sey Edwards
Jack Guralnik
W. Cherry Light
Features Editor
Donald A. Bergman
Stephen P. Flynn
Business Manager
Nick Grego
Public Relations
Robin A. Edward
Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films
Structural and electronic properties of amorphous and single-phase
polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable
gamma phase nucleates homogeneously in the film bulk and has a high
resistivity, while the metastable kappa phase nucleates at the film surface and
has a moderate resistivity. The microstructures of hot-deposited and
post-annealed cold-deposited gamma films are quite different but the electronic
properties are similar. The increase in the resistivity of amorphous In2Se3
films upon annealing is interpreted in terms of the replacement of In-In bonds
with In-Se bonds during crystallization. Great care must be taken in the
preparation of In2Se3 films for electrical measurements as the presence of
excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure
Formation of diluted IIIâV nitride thin films by N ion implantation
iluted IIIâNââVâËâ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1âyAs. In all three cases the fundamental band-gap energy for the ion beam synthesized IIIâNââVâËâ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNâAs1âx and InNâPâËâalloys. In GaNâAsâËâ the highest value of x (fraction of âactiveâ substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850â°C. The highest value of x achieved in InNâPâËâ was higher, 0.012, and the NP was found to be stable to at least 850â°C. In addition, the N activation efficiency in implantedInNâPâËâ was at least a factor of 2 higher than that in GaNâAsâËâ under similar processing conditions. AlyGa1âyNâAsâËâ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1âyNâAsâËâalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ââPhotovoltaic Materials
Focus Areaââ in the DOE Center of Excellence for the Synthesis
and Processing of Advanced Materials, Office of Science,
Office of Basic Energy Sciences, Division of Materials
Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported
by Midwest Research Institute under subcontractor
No. AAD-9-18668-7 from NREL
Coherence of Spin Qubits in Silicon
Given the effectiveness of semiconductor devices for classical computation
one is naturally led to consider semiconductor systems for solid state quantum
information processing. Semiconductors are particularly suitable where local
control of electric fields and charge transport are required. Conventional
semiconductor electronics is built upon these capabilities and has demonstrated
scaling to large complicated arrays of interconnected devices. However, the
requirements for a quantum computer are very different from those for classical
computation, and it is not immediately obvious how best to build one in a
semiconductor. One possible approach is to use spins as qubits: of nuclei, of
electrons, or both in combination. Long qubit coherence times are a
prerequisite for quantum computing, and in this paper we will discuss
measurements of spin coherence in silicon. The results are encouraging - both
electrons bound to donors and the donor nuclei exhibit low decoherence under
the right circumstances. Doped silicon thus appears to pass the first test on
the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
The energy position of the optical absorption edge and the free carrier
populations in InxGa1-xN ternary alloys can be controlled using high energy
4He+ irradiation. The blue shift of the absorption edge after irradiation in
In-rich material (x > 0.34) is attributed to the band-filling effect
(Burstein-Moss shift) due to the native donors introduced by the irradiation.
In Ga-rich material, optical absorption measurements show that the
irradiation-introduced native defects are inside the bandgap, where they are
incorporated as acceptors. The observed irradiation-produced changes in the
optical absorption edge and the carrier populations in InxGa1-xN are in
excellent agreement with the predictions of the amphoteric defect model
High fidelity quantum memory via dynamical decoupling: theory and experiment
Quantum information processing requires overcoming decoherence---the loss of
"quantumness" due to the inevitable interaction between the quantum system and
its environment. One approach towards a solution is quantum dynamical
decoupling---a method employing strong and frequent pulses applied to the
qubits. Here we report on the first experimental test of the concatenated
dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse
sequences. Using nuclear magnetic resonance, we demonstrate a near order of
magnitude improvement in the decay time of stored quantum states. In
conjunction with recent results on high fidelity quantum gates using CDD, our
results suggest that quantum dynamical decoupling should be used as a first
layer of defense against decoherence in quantum information processing
implementations, and can be a stand-alone solution in the right parameter
regime.Comment: 6 pages, 3 figures. Published version. This paper was initially
entitled "Quantum gates via concatenated dynamical decoupling: theory and
experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure,
Xinhua Peng, and Dieter Suter. That original version split into two papers:
http://arxiv.org/abs/1012.3433 (theory only) and the current pape
Cutting out continuations
In the field of program transformation, one often transforms programs into continuation-passing style to make their flow of control explicit, and then immediately removes the resulting continuations using defunctionalisation to make the programs first-order. In this article, we show how these two transformations can be fused together into a single transformation step that cuts out the need to first introduce and then eliminate continuations. Our approach is calculational, uses standard equational reasoning techniques, and is widely applicable
TransitionâMetalâFree CrossâCoupling of Benzothiophenes and Styrenes in a Stereoselective Synthesis of Substituted (E,Z)â1,3âDienes
A transition metalâfree oneâpot stereoselective approach to substituted (E,Z)â1,3âdienes was developed by using an interrupted Pummerer reaction/ligandâcoupling strategy. Readily available benzothiophene Sâoxides, which can be conveniently prepared by oxidation of the parent benzothiophenes, undergo Pummerer coupling with styrenes. Reaction of the resultant sulfonium salts with alkyllithium/magnesium reagents generates underexploited hypervalent sulfurane intermediates that undergo selective ligand coupling, resulting in dismantling of the benzothiophene motif and the formation of decorated (E,Z)â1,3âdienes
- âŚ