Entanglement in composite bosons realized by deformed oscillators

Composite bosons (or quasibosons), as recently proven, are realizable by deformed oscillators and due to that can be effectively treated as particles of nonstandard statistics (deformed bosons). This enables us to study quasiboson states and their inter-component entanglement aspects using the well developed formalism of deformed oscillators. We prove that the internal entanglement characteristics for single two-component quasiboson are determined completely by the parameter(s) of deformation. The bipartite entanglement characteristics are generalized and calculated for arbitrary multi-quasiboson (Fock, coherent etc.) states and expressed through deformation parameter.Comment: 5 pages; v2: abstract and introduction rewritten, references adde

Lattice anisotropy in uranium ternary compounds: UTX

Several U-based intermetallic compounds (UCoGe, UNiGe with the TiNiSi structure type and UNiAl with the ZrNiAl structure type) and their hydrides were studied from the point of view of compressibility and thermal expansion. Confronted with existing data for the compounds with the ZrNiAl structure type a common pattern emerges. The direction of the U-U bonds with participation of the 5f states is distinctly the "soft" crystallographic direction, exhibiting also the highest coefficient of linear thermal expansion. The finding leads to an apparent paradox: the closer the U atoms are together in a particular direction the better they can be additionally compressed together by applied hydrostatic pressure. (C) 2012 Elsevier B. V. All rights reserved

Structural effects in UO2 thin films irradiated with U ions

This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO2. Thin films of UO2 were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV 238U31+ ions to fluences of 5 × 1010, 5 × 1011 and 5 × 1012 ions/cm2 to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO2 films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO2. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO2 respond differently to ion irradiation

Structural effects in UO₂ thin films irradiated with U ions

AbstractThis work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO2. Thin films of UO2 were produced by reactive magnetron sputtering onto (001), (110) and (111) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110MeV 238U31+ ions to fluences of 5×1010, 5×1011 and 5×1012ions/cm2 to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO2 films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO2. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO2 respond differently to ion irradiation