154 research outputs found
Phase diagram of ferrimagnetic ladders with bond-alternation
We study the phase diagram of a 2-leg bond-alternation spin-(1/2, 1) ladder
for two different configurations using a quantum renormalization group
approach. Although d-dimensional ferrimagnets show gapless behavior, we will
explicitly show that the effect of the spin mixing and the bond-alternation can
open the possibility for observing an energy gap. We show that the gapless
phases of such systems can be equivalent to the 1-dimensional half-integer
antiferroamgnets, besides the gapless ferrimagnetic phases. We therefore
propose a phase transition between these two gapless phases that can be seen in
the parameter space.Comment: 5 pages and 3 ps figures, accepted in Phys. Rev.
Optical spin transfer in ferromagnetic semiconductors
Circularly polarized laser pulses that excite electron-hole pairs across the
band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate
and to study collective magnetization dynamics. The initial spin orientation of
a photocarrier in a (III,V) semiconductors is determined by the polarization
state of the laser. We show that the photocarrier spin can be irreversibly
transferred to the collective magnetization, whose dynamics can consequently be
flexibly controlled by suitably chosen laser pulses. As illustrations we
demonstrate the feasibility of all optical ferromagnetic resonance and optical
magnetization reorientation.Comment: 8 pages, 3 figure
Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As
We report on a theoretical study of dc transport coefficients in (Ga,Mn)As
diluted magnetic semiconductor ferromagnets that accounts for quasiparticle
scattering from ionized Mn acceptors with a local moment and
from non-magnetic compensating defects. In metallic samples Boltzmann transport
theory with Golden rule scattering rates accounts for the principle trends of
the measured difference between resistances for magnetizations parallel and
perpendicular to the current. We predict that the sign and magnitude of the
anisotropic magnetoresistance can be changed by strain engineering or by
altering chemical composition.Comment: 4 pages, 2 figure
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