294 research outputs found

    Novel Microscopic Mechanism of Intermixing during Growth on Soft Metallic Substrates

    Get PDF
    Generic computer simulations using empiric interatomic potentials suggest a new, collective mechanism that could be responsible for mixing at heteroepitaxial interfaces. Even if single adsorbate atoms diffuse by hopping on the substrate surface and do not mix at the terraces, two-dimensional islands formed by nucleation may become unstable above a certain critical size and explode upwards forming clusters of several atomic layers. This process is accompanied by strong distortions of the underlying atomic layers, and on soft materials it can result in surface etching and incorporation of substrate atoms into the islands.Fil: Gomez, Liliana Maria. Universidad Nacional de Rosario. Facultad de Ciencias Exactas, Ingeniería y Agrimensura; ArgentinaFil: Slutzky, Claudia Marcela. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: de la Figuera, J.. Sandia National Laboratories; Estados UnidosFil: Camarero, J.. Universidad Autónoma de Madrid; EspañaFil: Vazquez de Parga, A.. Universidad Autónoma de Madrid; EspañaFil: de Miguel, J.J.. Universidad Autónoma de Madrid; EspañaFil: Miranda, R.. Universidad Autónoma de Madrid; Españ

    Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

    Full text link
    Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated to the stacking fault are visualized by tunneling spectroscopy and its origin is identified by band structure calculations.Comment: 4 pages, 4 figures; to be published in Phys. Rev. Lett (2000

    CECM: A continuous empirical cubature method with application to the dimensional hyperreduction of parameterized finite element models

    Full text link
    We present the Continuous Empirical Cubature Method (CECM), a novel algorithm for empirically devising efficient integration rules. The CECM aims to improve existing cubature methods by producing rules that are close to the optimal, featuring far less points than the number of functions to integrate. The CECM consists on a two-stage strategy. First, a point selection strategy is applied for obtaining an initial approximation to the cubature rule, featuring as many points as functions to integrate. The second stage consists in a sparsification strategy in which, alongside the indexes and corresponding weights, the spatial coordinates of the points are also considered as design variables. The positions of the initially selected points are changed to render their associated weights to zero, and in this way, the minimum number of points is achieved. Although originally conceived within the framework of hyper-reduced order models (HROMs), we present the method's formulation in terms of generic vector-valued functions, thereby accentuating its versatility across various problem domains. To demonstrate the extensive applicability of the method, we conduct numerical validations using univariate and multivariate Lagrange polynomials. In these cases, we show the method's capacity to retrieve the optimal Gaussian rule. We also asses the method for an arbitrary exponential-sinusoidal function in a 3D domain, and finally consider an example of the application of the method to the hyperreduction of a multiscale finite element model, showcasing notable computational performance gains. A secondary contribution of the current paper is the Sequential Randomized SVD (SRSVD) approach for computing the Singular Value Decomposition (SVD) in a column-partitioned format. The SRSVD is particularly advantageous when matrix sizes approach memory limitations

    Clinical Assessment of “All in One” Framework for Partial Implant - Supported Prosthesis

    Get PDF
    INTRODUCTION: Restoration by implant-supported prosthesis seems to be a current option in the treatment of partially edentulous patients. Its success depends on the passive fit of the framework. Searching for new manufacturing materials and techniques to solve these problems, dental companies, combining clinical and experimental research, offer different solutions, such as Nobel Biocare, the “all in one” system, which is a framework designed by CAD/CAM. AIM OF PRESENTATION: Clinical and radiographical assessment of the passive fit of the titanium framework computer designed for partially edentulous patients.The case presented is that of an adult patient, partially edentulous.The definite impression taking was carried out, using the IRStechnique (Implant Reposition Splint), to obtain the working cast. The dental laboratory performed the setting of artificial teeth in wax and acrylic framework. Placed inside the patient\u27s mouth for verification, and computer scanned to digitize its design. After data processing, titanium milling was performed. The passive fit was checked clinically by the Sheffield test. Subsequently, radiographs were taken with the parallel technique to check the adjustment. Using the patient\u27s subjective assessment any type of pain or symptoms indicating the existence of tension between the framework and implants is recorded. The procedure ended with the application of a ceramic coating of Triceram. CONCLUSION: Good results of such frameworks are predictable at functional level, but more investigations are necessary to ensure that their use is a guideline for building partial frameworks

    Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin film system

    Full text link
    We have studied the magnetic configuration in ultrathin antiferromagnetic Mn films grown around monoatomic steps on an Fe(001) surface by spin-polarized scanning tunneling microscopy/spectroscopy and ab-initio-parametrized self-consistent real-space tight binding calculations in which the spin quantization axis is independent for each site thus allowing noncollinear magnetism. Mn grown on Fe(001) presents a layered antiferromagnetic structure. In the regions where the Mn films overgrows Fe steps the magnetization of the surface layer is reversed across the steps. Around these defects a frustration of the antiferromagnetic order occurs. Due to the weakened magnetic coupling at the central Mn layers, the amount of frustration is smaller than in Cr and the width of the wall induced by the step does not change with the thickness, at least for coverages up to seven monolayers.Comment: 10 pages, 5 figure

    Periodically rippled graphene: growth and spatially resolved electronic structure

    Get PDF
    We studied the growth of an epitaxial graphene monolayer on Ru(0001). The graphene monolayer covers uniformly the Ru substrate over lateral distances larger than several microns reproducing the structural defects of the Ru substrate. The graphene is rippled with a periodicity dictated by the difference in lattice parameter between C and Ru. The theoretical model predict inhomogeneities in the electronic structure. This is confirmed by measurements in real space by means of scanning tunnelling spectroscopy. We observe electron pockets at the higher parts of the ripples.Comment: 5 page

    Periodically modulated geometric and electronic structure of graphene on Ru(0001)

    Full text link
    We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrates under controlled UHV conditions. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We characterize its perfection at the atomic scale by means of STM and determine its electronic structure in the real space by local tunnelling spectroscopy. There are periodic variations in the geometric and electronic structure of the graphene monolayer. We observe inhomogeneities in the charge distribution, i.e a larger occupied Density Of States at the higher parts of the ripples. Periodically rippled graphene might represent the physical realization of an ordered array of coupled graphene quantum dots. The data show, however, that for rippled graphene on Ru(0001) both the low and the high parts of the ripples are metallic. The fabrication of periodically rippled graphene layers with controllable characteristic length and different bonding interactions with the substrate will allow a systematic experimental test of this fundamental problem.Comment: 12 pages. Contribution to the topical issue on graphene of Semiconductor Science and Technolog

    A split-based incremental deterministic automata minimization algorithm

    Full text link
    The final publication is available at Springer via http://dx.doi.org/10.1007/s00224-014-9588-y. La fecha de publicación corresponde a la versión First OnlineWe here study previous results due to Hopcroft and Almeida et al. to propose an incremental split-based deterministic automata minimization algorithm whose average running-time does not depend on the size of the alphabet. The experimentation carried out shows that our proposal outperforms the algorithms studied whenever the automata have more than a (quite small) number of states and symbols.García Gómez, P.; Vázquez-De-Parga Andrade, M.; Velasco, JA.; López Rodríguez, D. (2014). A split-based incremental deterministic automata minimization algorithm. Theory of Computing Systems. 1-18. doi:10.1007/s00224-014-9588-y118Hopcroft, J.E., Ullman, J.D.: Introduction to Automata Theory, Languages and Computation. Addison-Wesley Publishing Company (1979)Watson, B.W., Daciuk, J.: An efficient incremental DFA minimization algorithm. Nat. Lang. Eng. 9(1), 49–64 (2003)Almeida, M., Moreira, N., Reis, R.: Incremental DFA minimisation. In: Domaratzki, M., Salomaa, K. (eds.) CIAA, of Lecture Notes in Computer Science, vol. 6482, pp 39–48. Springer (2010)Hopcroft, J.E.: An n ⋅ log n nlognn\cdot \log n algorithm for minimizing states in a finite automaton. Technical report, Stanford, University, Stanford (1971)Moore, E.F.: Gedanken experiments on sequential machines. In: Shannon, C.E., Mc-Carthy, J. (eds.) Automata Studies. Princeton Universty Press, Princeton (1956)Berstel, J., Boasson, L., Carton, O., Fagnot, I.: Automata: from Mathematics to Applications, chapter Minimization of automata. European Mathematical Society. (arXiv: 1010.5318v3. ) To appear.David, J.: Average complexity of Moore’s and Hopcroft’s algorithms. Theor. Comput. Sci. 417, 50–65 (2012)Almeida, M., Moreira, N., Reis, R.: Aspects of enumeration and generation with a string automata representation. In: Leung, H., Pighizzini, G. (eds.) DCFS, pp 58–69. New Mexico State University, Las Cruces (2006)Gries, D.: Describing an algorithm by Hopcroft. Acta Informatica 2, 97–109 (1973)Aho, A., Hopcroft, J.E., Ullman, J.D.: The Design and Analysis of Computer Algorithms. Addison-Wesley Publishing Company (1974)Blum, N.: A O ( n log n ) O(nlogn)\mathcal {O}(n\log n) implementation of the standard method for minimizing n-state finite automata. Inf. Process. Lett. 57, 65–69 (1996)Knuutila, T.: Re-describing an algorithm by Hopcroft. Theor. Comput. Sci. 250, 333–363 (2001)Veanes, M.: Minimization of symbolic automata. Technical report, Microsoft Research, MSR-TR-2013-48 (2013)Lothaire, M.: Applied Combinatorics on Words chap. 1. Cambridge University Press, Cambridge (2005

    Hyper-reduction for Petrov-Galerkin reduced order models

    Full text link
    Projection-based Reduced Order Models minimize the discrete residual of a "full order model" (FOM) while constraining the unknowns to a reduced dimension space. For problems with symmetric positive definite (SPD) Jacobians, this is optimally achieved by projecting the full order residual onto the approximation basis (Galerkin Projection). This is sub-optimal for non-SPD Jacobians as it only minimizes the projection of the residual, not the residual itself. An alternative is to directly minimize the 2-norm of the residual, achievable using QR factorization or the method of the normal equations (LSPG). The first approach involves constructing and factorizing a large matrix, while LSPG avoids this but requires constructing a product element by element, necessitating a complementary mesh and adding complexity to the hyper-reduction process. This work proposes an alternative based on Petrov-Galerkin minimization. We choose a left basis for a least-squares minimization on a reduced problem, ensuring the discrete full order residual is minimized. This is applicable to both SPD and non-SPD Jacobians, allowing element-by-element assembly, avoiding the use of a complementary mesh, and simplifying finite element implementation. The technique is suitable for hyper-reduction using the Empirical Cubature Method and is applicable in nonlinear reduction procedures
    corecore