Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the inter donor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the $1s$ levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.Comment: Published version. Corrected b and B values from previous versio

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on sub-nanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to dephasing pointed out additionall

Infinite disorder scaling of random quantum magnets in three and higher dimensions

Using a very efficient numerical algorithm of the strong disorder renormalization group method we have extended the investigations about the critical behavior of the random transverse-field Ising model in three and four dimensions, as well as for Erd\H os-R\'enyi random graphs, which represent infinite dimensional lattices. In all studied cases an infinite disorder quantum critical point is identified, which ensures that the applied method is asymptotically correct and the calculated critical exponents tend to the exact values for large scales. We have found that the critical exponents are independent of the form of (ferromagnetic) disorder and they vary smoothly with the dimensionality.Comment: 6 pages, 5 figure

Long-range order versus random-singlet phases in quantum antiferromagnetic systems with quenched disorder

The stability of antiferromagnetic long-range order against quenched disorder is considered. A simple model of an antiferromagnet with a spatially varying Neel temperature is shown to possess a nontrivial fixed point corresponding to long-range order that is stable unless either the order parameter or the spatial dimensionality exceeds a critical value. The instability of this fixed point corresponds to the system entering a random-singlet phase. The stabilization of long-range order is due to quantum fluctuations, whose role in determining the phase diagram is discussed.Comment: 5 pp., REVTeX, epsf, 3 eps figs, final version as published, including erratu

Use of Monsoon Herbage (Amaranthus spp.) in Complete Feed Block for Sheep Feeding

Favourable climatic condition and faster vegetation growth during monsoon season leads to abundance of forage production, which remained mostly unutilized by the grazing herbivores. Chaulai (Amaranthus spp) is one of the local green biomass that grows very fast after first monsoon shower and is not preferably grazed in comparison to other available grazing resources during monsoon. A huge quantity (dry biomass yield of approximately 10-15 Q/ha) of this biomass is therefore gone waste in due course, not being harvested or utilized. This plant is quite rich in protein (CP 10-14%) with succulent leaves and tender stems and has varying palatability in sheep, goat and cattle. Therefore an experiment was conducted to utilize Chaulai herbage in sheep feeding after drying, chaffing and incorporating in complete feed block (CFB)

Discovery of High-Latitude CO in a HI Supershell in NGC 5775

We report the discovery of very high latitude molecular gas in the edge-on spiral galaxy, NGC 5775. Emission from both the J=1-0 and 2-1 lines of 12CO is detected up to 4.8 kpc away from the mid-plane of the galaxy. NGC 5775 is known to host a number of HI supershells. The association of the molecular gas M(H2,F2) = 3.1x10^7 solar masses reported here with one of the HI supershells (labeled F2) is clear, which suggests that molecular gas may have survived the process which originally formed the supershell. Alternatively, part of the gas could have been formed in situ at high latitude from shock-compression of pre-existing HI gas. The CO J=2-1/J=1-0 line ratio of 0.34+-40% is significantly lower than unity, which suggests that the gas is excited subthermally, with gas density a few times 100 cubic cm. The molecular gas is likely in the form of cloudlets which are confined by magnetic and cosmic rays pressure. The potential energy of the gas at high latitude is found to be 2x10^56 ergs and the total (HI + H2) kinetic energy is 9x10^53 ergs. Based on the energetics of the supershell, we suggest that most of the energy in the supershell is in the form of potential energy and that the supershell is on the verge of falling and returning the gas to the disk of the galaxy.Comment: Accept by ApJL, 4 pages, 3 ps figure

Renormalization group study of the two-dimensional random transverse-field Ising model

The infinite disorder fixed point of the random transverse-field Ising model is expected to control the critical behavior of a large class of random quantum and stochastic systems having an order parameter with discrete symmetry. Here we study the model on the square lattice with a very efficient numerical implementation of the strong disorder renormalization group method, which makes us possible to treat finite samples of linear size up to $L=2048$. We have calculated sample dependent pseudo-critical points and studied their distribution, which is found to be characterized by the same shift and width exponent: $\nu=1.24(2)$. For different types of disorder the infinite disorder fixed point is shown to be characterized by the same set of critical exponents, for which we have obtained improved estimates: $x=0.982(15)$ and $\psi=0.48(2)$. We have also studied the scaling behavior of the magnetization in the vicinity of the critical point as well as dynamical scaling in the ordered and disordered Griffiths phases

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted