Bandwidth Allocation for a Revenue-Aware Network Utility Maximisation

Published versio

The Emotional Self-Efficacy Scale: Adaptation and Validation for Young Adolescents

Emotional self-efficacy (ESE) is an important aspect of emotional functioning, with current measures for children and adolescents focused on the measurement of self-beliefs in relation to the management of emotions. In the present study, we report the psychometric properties of the first adaptation of the Emotional Self-Efficacy Scale for youth (Youth-ESES) that measures additional aspects of ESE, such as perceiving and understanding emotions and helping others modulate their emotions. Participants were 192 young adolescents aged 11 to 13 years from a U.K. state school. They completed the Youth-ESES and measures of ability emotional intelligence (EI) and cognitive ability. Results support the same four-factor structure that has been previously documented using the adult version of the ESES, with the four subscales being largely independent from cognitive ability and only moderately related to ability EI. However, the four subscales were less differentiated in the present study compared with adult data previously published, suggesting that there is a strong general factor underlying young adolescents’ ESE scores. Overall, the results suggest that the adapted Youth-ESES can be reliably used with youth, and that confidence in how a young person feels about his or her emotional functioning remains distinct from emotional skill

Total and partial cross sections of the 112^{112}Sn(α,γ\alpha,\gamma)116^{116}Te reaction measured via in-beam γ\gamma-ray spectroscopy

An extended database of experimental data is needed to address uncertainties of the nuclear-physics input parameters for Hauser-Feshbach calculations. Especially $\alpha$+nucleus optical model potentials at low energies are not well known. The in-beam technique with an array of high-purity germanium (HPGe) detectors was successfully applied to the measurement of absolute cross sections of an ($\alpha$,$\gamma$) reaction on a heavy nucleus at sub-Coulomb energies. The total and partial cross-section values were measured by means of in-beam $\gamma$-ray spectroscopy. Total and partial cross sections were measured at four different $\alpha$-particle energies from $E_\alpha = 10.5$ MeV to $E_\alpha = 12$ MeV. The measured total cross-section values are in excellent agreement with previous results obtained with the activation technique, which proves the validity of the applied method. The experimental data was compared to Hauser-Feshbach calculations using the nuclear reaction code TALYS. A modified version of the semi-microscopic $\alpha$+nucleus optical model potential OMP 3, as well as modified proton and $\gamma$ widths, are needed in order to obtain a good agreement between experimental data and theory. It is found, that a model using a local modification of the nuclear-physics input parameters simultaneously reproduces total cross sections of the $^{112}$Sn($\alpha$,$\gamma$) and $^{112}$Sn($\alpha$,p) reactions. The measurement of partial cross sections turns out to be very important in this case in order to apply the correct $\gamma$-ray strength function in the Hauser-Feshbach calculations. The model also reproduces cross-section values of $\alpha$-induced reactions on $^{106}$Cd, as well as of ($\alpha$,n) reactions on $^{115,116}$Sn, hinting at a more global character of the obtained nuclear-physics input.Comment: 8 pages, 9 figure

Exploratory study on microanalysis of thin films by backscattering techniques

Solid phase epitaxial growth of Si layers was studied by backscattering spectrometry for controllable electrical characteristics. Samples were fabricated by vacuum deposition on a thin layer of Sb before deposition of the amorphous Si layer. Analysis of the resulting SPEG layer showed that Sb was present in the SPEG layer of Si. The characteristic of the SPEG layer against the Si substrate was rectifying. A scanning microprobe picture of a cleaved sample established the presence of a depletion region more than 1 micron below the surface. Hall effect data indicated that the SPEG layer was n-type, with average free carrier concentration of about 10 to the 19th power cm/3 and average electron mobility of about 40 sq cm/Vs. SPEG with Pd silicide or Ni silicide transport layers showed fast initial transient growth regimes with slower growth in the steady state regimes

Space charge effects in current transport Quarterly status report

Space charge limitations of currents for use in dosimeter

Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates

The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV

Deep-sea image processing

High-resolution seafloor mapping often requires optical methods of sensing, to confirm interpretations made from sonar data. Optical digital imagery of seafloor sites can now provide very high resolution and also provides additional cues, such as color information for sediments, biota and divers rock types. During the cruise AT11-7 of the Woods Hole Oceanographic Institution (WHOI) vessel R/V Atlantis (February 2004, East Pacific Rise) visual imagery was acquired from three sources: (1) a digital still down-looking camera mounted on the submersible Alvin, (2) observer-operated 1-and 3-chip video cameras with tilt and pan capabilities mounted on the front of Alvin, and (3) a digital still camera on the WHOI TowCam (Fornari, 2003). Imagery from the first source collected on a previous cruise (AT7-13) to the Galapagos Rift at 86°W was successfully processed and mosaicked post-cruise, resulting in a single image covering area of about 2000 sq.m, with the resolution of 3 mm per pixel (Rzhanov et al., 2003). This paper addresses the issues of the optimal acquisition of visual imagery in deep-seaconditions, and requirements for on-board processing. Shipboard processing of digital imagery allows for reviewing collected imagery immediately after the dive, evaluating its importance and optimizing acquisition parameters, and augmenting acquisition of data over specific sites on subsequent dives.Images from the deepsea power and light (DSPL) digital camera offer the best resolution (3.3 Mega pixels) and are taken at an interval of 10 seconds (determined by the strobe\u27s recharge rate). This makes images suitable for mosaicking only when Alvin moves slowly (≪1/4 kt), which is not always possible for time-critical missions. Video cameras provided a source of imagery more suitable for mosaicking, despite its inferiority in resolution. We discuss required pre-processing and imageenhancement techniques and their influence on the interpretation of mosaic content. An algorithm for determination of camera tilt parameters from acquired imagery is proposed and robustness conditions are discussed