Tunneling spin-galvanic effect

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.Comment: 3 pages, 2 figure

Molecular and elemental composition of humic acids isolated from selected soils of the Russian Arctic

Humic substances, isolated from selected soils of the Russian Arctic, were ,+investigated in terms of molecular composition and stabilization rate. The degree of polar soil organic matter stabilization was assessed with the use of modern instrumental spectroscopy methods. The analysis of humic acid (HAs) preparations showed that aliphatic fragments prevail in the organic matter isolated in polar soils. The predominance of aliphatic fragments was revealed in HAs from soils located in the coastal zone, which could be caused by regular refreshment of organic matter during sin-lithogenic process and processes of hydrogenation in HAs. Breaking of the C-C bonds and formation of chains with a high hydrogen content, which leads to the formation of aliphatic fragments in HAs, were noted. Data on the calculated atomic ratios of the elements in HAs are given and graphs show the main regularities in the formation of HAs and their properties. The integrated indicators of the molecular composition of humic acids of soils of the Russian Arctic are presented. The paper contains 4 Tables, 4 Figures and 44 References

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $$. On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.Comment: 8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter

Mechanisms of regulation of invasive processes in phytoplankton on the example of the north-eastern part of the Black Sea

© 2016, Springer Science+Business Media Dordrecht. In the north-eastern part of the Black Sea, the seasonal complexes of dominant species of phytoplankton were fixed: small-celled diatom (spring), coccolithophores (late spring, early summer) and large diatoms (summer and autumn). In May–June 2005 and 2006, two invasive species of marine diatoms Chaetoceros throndsenii (maximal abundance 1.92 × 105 cells/l) and Chaetoceros minimus (1.6 × 105 cells/l) were recorded. These species have been incorporated in the complex of the late spring and early summer and grew simultaneously with the coccolithophore Emiliania huxleyi. The coccolithophore was dominant species, whose abundance had reached the level of a bloom. C. throndsenii was observed over the entire area from the coast to the centre of the sea; C. minimus were recorded at coastal stations and only at two stations of the open sea. Stratification of the water mass and the low (below the Redfield) ratio of nitrogen to phosphorus were observed at this time. Then, C. throndsenii was not marked even once, and C. minimus has been registered once on a shelf in June 2011. Experimental studies (2005) have shown that intensive growth C. throndsenii requires the simultaneous addition of nitrogen and phosphorus in a ratio close to the Redfield ratio. C. minimus shows the intensive growth only at high concentrations of phosphorus and at low nitrogen-to-phosphorus ratio (the experiment was carried out in June 2011). Mathematical modelling shows that C. throndsenii and Emiliania huxleyi form a stable couple whose growth is limited by different factors: the diatoms by nitrogen and the coccolithophores by phosphorus. C. minimus might not be able to form a stable couple with coccolithophores because they have the same limiting factor, i.e. phosphorus. However, this species could become the dominant one, if low (0.5–1) nitrogen-to-phosphorus ratio conditions were stable for more than 2 months. However, this scenario is improbable in natural circumstances since the existence of this complex seasonal rarely exceeds 1.5 months

Hydrodynamic Simulations of Counterrotating Accretion Disks

Hydrodynamic simulations have been used to study accretion disks consisting of counterrotating components with an intervening shear layer(s). Configurations of this type can arise from the accretion of newly supplied counterrotating matter onto an existing corotating disk. The grid-dependent numerical viscosity of our hydro code is used to simulate the influence of a turbulent viscosity of the disk. Firstly, we consider the case where the gas well above the disk midplane rotates with angular rate +\Omega(r) and that well below has the same properties but rotates with rate -\Omega(r). We find that there is angular momentum annihilation in a narrow equatorial boundary layer in which matter accretes supersonically with a velocity which approaches the free-fall velocity and the average accretion speed of the disk can be enormously larger than that for a conventional \alpha-disk rotating in one direction. Secondly, we consider the case of a corotating accretion disk for rr_t. In this case we observed, that matter from the annihilation layer lost its stability and propagated inward pushing matter of inner regions of the disk to accrete. Thirdly, we investigated the case where counterrotating matter inflowing from large radial distances encounters an existing corotating disk. Friction between the inflowing matter and the existing disk is found to lead to fast boundary layer accretion along the disk surfaces and to enhanced accretion in the main disk. These models are pertinent to the formation of counterrotating disks in galaxies and possibly in Active Galactic Nuclei and in X-ray pulsars in binary systems.Comment: LaTeX, 18 pages, to appear in Ap

Spin relaxation of localized electrons in n-type semiconductors

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.Comment: Submitted to the special issue "Optical Orientation", Semiconductor Science and Technolog

Single-particle states in spherical Si/SiO2_2 quantum dots

We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.Comment: 8 pages, 5 figure

Spin-orbit terms in multi-subband electron systems: A bridge between bulk and two-dimensional Hamiltonians

We analyze the spin-orbit terms in multi-subband quasi-two-dimensional electron systems, and how they descend from the bulk Hamiltonian of the conduction band. Measurements of spin-orbit terms in one subband alone are shown to give incomplete information on the spin-orbit Hamiltonian of the system. They should be complemented by measurements of inter-subband spin-orbit matrix elements. Tuning electron energy levels with a quantizing magnetic field is proposed as an experimental approach to this problem.Comment: Typos noticed in the published version have been corrected and several references added. Published in the special issue of Semiconductors in memory of V.I. Pere

Temperature influence on the properties of thin Si₃N₄ films

Applying Raman spectroscopy, small-angle x-ray scattering, and atomic force microscopy it were studied phase composition and surface morphology of nanoscale films Si₃N₄ (obtained by RF magnetron sputtering