DMI meter: Measuring the Dzyaloshinskii-Moriya interaction inversion in Pt/Co/Ir/Pt multilayers

We describe a field-driven domain wall creep-based method for the quantification of interfacial Dzyaloshinskii-Moriya interactions (DMI) in perpendicularly magnetized thin films. The use of only magnetic fields to drive wall motion removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. We demonstrate this method on sputtered Pt/Co/Ir/Pt multilayers with a variable Ir layer thickness. By inserting an ultrathin layer of Ir at the Co/Pt interface we can reverse the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously change the domain wall (DW) structure from right- to the left-handed N\'{e}el wall. We also show that the DMI shows exquisite sensitivity to the exact details of the atomic structure at the film interfaces by comparison with a symmetric epitaxial Pt/Co/Pt multilayer

Engineering magnetic domain-wall structure in permalloy nanowires

Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where magnetic properties are modified by a Ga ion probe with diameter ~ 10 nm using a focused ion beam microscope. We study the detailed change of the modified region (which is on the scale of the focused ion spot) using electron energy loss spectroscopy and differential phase contrast imaging on an aberration (Cs) corrected scanning transmission electron microscope. The signal variation observed indicates that the region modified by the irradiation corresponds to ~ 40-50 nm despite the ion probe size of only 10 nm. Employing the Fresnel mode of Lorentz transmission electron microscopy, we show that it is possible to control the domain wall structure and its depinning strength not only via the irradiation dose but also the line orientation.Comment: Accepted for publication in Physical Review Applie

Magnetic microscopy of topologically protected homochiral domain walls in an ultrathin perpendicularly magnetized Co film

Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel is controlled by the nature of the wall and its chirality. This chirality is attributed to effects emerging from the lack of inversion symmetry at the interface between a ferromagnet and a heavy metal, leading to an interfacial Dzyaloshinskii-Moriya interaction that can control the shape and chirality of the magnetic domain wall. Here we present direct imaging of domain walls in Pt/Co/AlO$_x$ films using Lorentz transmission electron microscopy, demonstrating the presence of homochiral, and thus topologically protected, N\'{e}el walls. Such domain walls are good candidates for dense data storage, bringing the bit size down close to the limit of the domain wall width

Skyrmion morphology in ultrathin magnetic films

Nitrogen-vacancy magnetic microscopy is employed in quenching mode as a non-invasive, high resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected by local pinning effects and magnetic field history. Micromagnetic simulations including static disorder, based on a physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.Comment: 9 pages, 8 figures, including supplementary information

Grayscale control of local magnetic properties with direct-write laser annealing

Across the fields of magnetism, microelectronics, optics, and others, engineered local variations in physical properties can yield groundbreaking functionalities that play a crucial role in enabling future technologies. Beyond binary modifications, 1D lateral gradients in material properties (achieved by gradients in thickness, stoichiometry, temperature, or strain) give rise to a plethora of new effects in thin film magnetic systems. However, extending such gradient-induced behaviors to 2D is challenging to realize with existing methods, which are plagued by slow processing speeds, dose instabilities, or limitation to variation along one dimension. Here, we show for the first time how commonplace direct-write laser exposure techniques, initially developed for grayscale patterning of photoresist surfaces, can be repurposed to perform grayscale direct-write laser annealing. With this technique, we demonstrate the ease with which two-dimensional, continuous variations in magnetic properties can be created at the mesoscopic scale in numerous application-relevant materials, including ferromagnetic, ferrimagnetic, and synthetic antiferromagnetic thin-film systems. The speed, versatility, and new possibilities to create complex magnetic energy landscapes offered by direct-write laser annealing opens the door to the lateral modification of the magnetic, electronic, and structural properties of a variety of thin films with an abundance of applications.Comment: 22 pages, 4 figures, 6 extended data figure

Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral N´eel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co20Fe60B20/MgO the DMI may be influenced by annealing. We find that the DMI peaks at D = 0.057 ± 0.003 mJ/m2 at an annealing temperature of 230 ◦C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased

Measuring and tailoring the Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films

We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin films of Pt/Co/Pt and Pt/Co/Ir/Pt. To study the effective DMI, arising at either side of the ferromagnet, we use a field-driven domain wall creep-based method. The use of only magnetic field removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. Inserting an ultrathin layer of Ir at the top Co/Pt interface allows us to access the DMI contribution from the top Co/Pt interface. We show that the insertion of a thin Ir layer leads to reversal of the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously changes the domain wall structure from the right- to the left-handed Néel wall. The use of two DMI-active layers offers an efficient way of DMI tuning and enhancement in thin magnetic films. The comparison with an epitaxial Pt/Co/Pt multilayer sheds more light on the origin of DMI in polycrystalline Pt/Co/Pt films and demonstrates an exquisite sensitivity to the exact details of the atomic structure at the film interfaces

Spin-orbit torque-driven magnetization switching and thermal effects studied in Ta\CoFeB\MgO nanowires

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized Néel-Brown model enables key parameters of the thermally induced spin-orbit torques-driven switching process to be estimated, such as the attempt frequency and the effective energy barrier

Current-induced nucleation and dynamics of skyrmions in a Co-based Heusler alloy

We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of $100$ nm in a single ultrathin layer of the Heusler alloy Co$_2$FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in microwires is studied with a scanning Nitrogen-Vacancy magnetometer operating in the photoluminescence quenching mode. We first demonstrate skyrmion nucleation by spin-orbit torque and show that its efficiency can be significantly improved using tilted magnetic fields, an effect which is not specific to Heusler alloys and could be advantageous for future skyrmion-based devices. We then show that current-induced skyrmion motion remains limited by strong pinning effects, even though CFA is a magnetic material with a low magnetic damping parameter.Comment: 5 pages, 4 figure