Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelengths regions only, in which the response due to silicon is dominant. Here we present comparative SPM studies in the visible ($\lambda$ = 633nm) and infrared ($\lambda$ = 1550nm) wavelength regions for a number of GSi Schottky junction photodetector architectures, revealing the photoresponse mechanisms for silicon and graphene dominated responses, respectively, and demonstrating the influence of electrostatics on the device performance. Local electric field enhancement at the graphene edges leads to a more than ten-fold increased photoresponse compared to the bulk of the graphene-silicon junction. Intentional design and patterning of such graphene edges is demonstrated as an efficient strategy to increase the overall photoresponse of the devices. Complementary simulations and modeling illuminate observed effects and highlight the importance of considering graphene's shape and pattern and device geometry in the device design

Non-volatile switching in graphene field effect devices

The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" to an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to non-volatile memories and novel neuromorphic processing concepts.Comment: 14 pages, 4 figures, submitted to IEEE ED

Strong plasmonic enhancement of photovoltage in graphene.

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries

Surface energy engineering of graphene

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69{\deg} on SiC substrates to 92{\deg} with graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single, bi, and multi layer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and correlation between the level of disorder and wettability is reported. By using low power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices

Antibody-mediated inhibition of syndecan-4 dimerisation reduces interleukin (IL)-1 receptor trafficking and signalling.

OBJECTIVE: Syndecan-4 (sdc4) is a cell-anchored proteoglycan that consists of a transmembrane core protein and glucosaminoglycan (GAG) side chains. Binding of soluble factors to the GAG chains of sdc4 may result in the dimerisation of sdc4 and the initiation of downstream signalling cascades. However, the question of how sdc4 dimerisation and signalling affects the response of cells to inflammatory stimuli is unknown. METHODS: Sdc4 immunostaining was performed on rheumatoid arthritis (RA) tissue sections. Interleukin (IL)-1 induced extracellular signal-regulated kinases (ERK) phosphorylation and matrix metalloproteinase-3 production was investigated. Il-1 binding to sdc4 was investigated using immunoprecipitation. IL-1 receptor (IL1R1) staining on wild-type, sdc4 and IL1R1 knockout fibroblasts was performed in fluorescence-activated cell sorting analyses. A blocking sdc4 antibody was used to investigate sdc4 dimerisation, IL1R1 expression and the histological paw destruction in the human tumour necrosis factor-alpha transgenic mouse. RESULTS: We show that in fibroblasts, the loss of sdc4 or the antibody-mediated inhibition of sdc4 dimerisation reduces the cell surface expression of the IL-1R and regulates the sensitivity of fibroblasts to IL-1. We demonstrate that IL-1 directly binds to sdc4 and in an IL-1R-independent manner leads to its dimerisation. IL-1-induced dimerisation of sdc4 regulates caveolin vesicle-mediated trafficking of the IL1R1, which in turn determines the responsiveness to IL-1. Administration of antibodies (Ab) against the dimerisation domain of sdc4, thus, strongly reduces the expression IL1R1 on arthritic fibroblasts both in vitro and an animal model of human RA. CONCLUSION: Collectively, our data suggest that Ab that specifically inhibit sdc4 dimerisation may support anti-IL-1 strategies in diseases such as inflammatory arthritis

Surface Plasmon Polariton Graphene Photodetectors.

The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs separate, limits the photoactive region to submicron length scales. Here, we couple graphene with a plasmonic grating and exploit the resulting surface plasmon polaritons to deliver the collected photons to the junction region of a metal-graphene-metal photodetector. This gives a 400% enhancement of responsivity and a 1000% increase in photoactive length, combined with tunable spectral selectivity. The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon biosensing with direct-electric-redout, eliminating the need of bulky optics

Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene

We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals.Comment: to appear in Nano Letter

Generation of photovoltage in graphene on a femtosecond time scale through efficient carrier heating

Graphene is a promising material for ultrafast and broadband photodetection. Earlier studies addressed the general operation of graphene-based photo-thermoelectric devices, and the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds. However, the generation of the photovoltage could occur at a much faster time scale, as it is associated with the carrier heating time. Here, we measure the photovoltage generation time and find it to be faster than 50 femtoseconds. As a proof-of-principle application of this ultrafast photodetector, we use graphene to directly measure, electrically, the pulse duration of a sub-50 femtosecond laser pulse. The observation that carrier heating is ultrafast suggests that energy from absorbed photons can be efficiently transferred to carrier heat. To study this, we examine the spectral response and find a constant spectral responsivity between 500 and 1500 nm. This is consistent with efficient electron heating. These results are promising for ultrafast femtosecond and broadband photodetector applications.Comment: 6 pages, 4 figure

Electrical Control of Plasmon Resonance with Graphene

Surface plasmon, with its unique capability to concentrate light into sub-wavelength volume, has enabled great advances in photon science, ranging from nano-antenna and single-molecule Raman scattering to plasmonic waveguide and metamaterials. In many applications it is desirable to control the surface plasmon resonance in situ with electric field. Graphene, with its unique tunable optical properties, provides an ideal material to integrate with nanometallic structures for realizing such control. Here we demonstrate effective modulation of the plasmon resonance in a model system composed of hybrid graphene-gold nanorod structure. Upon electrical gating the strong optical transitions in graphene can be switched on and off, which leads to significant modulation of both the resonance frequency and quality factor of plasmon resonance in gold nanorods. Hybrid graphene-nanometallic structures, as exemplified by this combination of graphene and gold nanorod, provide a general and powerful way for electrical control of plasmon resonances. It holds promise for novel active optical devices and plasmonic circuits at the deep subwavelength scale