231 research outputs found

    Annealing of defects in Fe after MeV Heavy ion irradiation

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    We report study of recovery dynamics, followed by in-situ resistivity measurement after 100 MeV oxygen ion irradiation, in cold rolled Fe at 300K. Scaling behavior with microstructural density and temperature of sample have been used to establish stress induced defects formed during irradiation as a new type of sink. The dynamics after irradiation has been shown to be due to migration of defects to two types of sinks i.e. stress induced defect as variable sinks and internal surfaces as fixed sinks. Experimental data obtained under various experimental conditions have been fitted to theoretical curves. Parameters thus obtained from fitting are employed to establish effect of electronic energy loss and temperature on recovery dynamics and stress associated with variable sinks.Comment: 12 pages, 7 figures. Europhysics Letter (in press

    Thermal annealing study of swift heavy-ion irradiated zirconia

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    Sintered samples of monoclinic zirconia (alpha-ZrO2) have been irradiated at room temperature with 6.0-GeV Pb ions in the electronic slowing down regime. X-ray diffraction (XRD) and micro-Raman spectroscopy measurements showed unambiguously that a transition to the 'metastable' tetragonal phase (beta-ZrO2) occurred at a fluence of 6.5x10^12 cm-2 for a large electronic stopping power value (approx 32.5 MeV ÎĽ\mum-1). At a lower fluence of 1.0x10^12 cm-2, no such phase transformation was detected. The back-transformation from beta- to alpha-ZrO2 induced by isothermal or isochronal thermal annealing was followed by XRD analysis. The back-transformation started at an onset temperature around 500 K and was completed by 973 K. Plots of the residual tetragonal phase fraction deduced from XRD measurements versus annealing temperature or time are analyzed with first- or second-order kinetic models. An activation energy close to 1 eV for the back-transformation process is derived either from isothermal annealing curves, using the so-called "cross-cut" method, or from the isochronal annealing curve, using a second-order kinetic law. Correlation with the thermal recovery of ion-induced paramagnetic centers monitored by EPR spectroscopy is discussed. Effects of crystallite size evolution and oxygen migration upon annealing are also addressed

    Thermal recovery of colour centres induced in cubic yttria-stabilized zirconia by charged particle irradiations

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    We have used electron paramagnetic resonance to study the thermal annealing of colour centres induced in cubic yttria-stabilized zirconia by swift electron and heavy ion-irradiations. Single crystals were irradiated with 1 or 2-MeV electrons, and 200-MeV 127I, or 200-MeV 197Au ions. Electron and ion beams produce the same colour centres: namely i) an F+-like centre, ii) the so-called T-centre (Zr3+ in a trigonal oxygen local environment), and iii) a hole center. Isochronal annealing was performed up to 973 K. Isothermal annealing was performed at various temperatures on samples irradiated with 2-MeV electrons. The stability of paramagnetic centres increases with fluence and with a TCR treatment at 1373 K under vacuum prior to the irradiations. Two distinct recovery processes are observed depending on fluence and/or thermal treatment. The single-stage type I process occurs for F+-like centres at low fluences in as-received samples, and is probably linked to electron-hole recombination. T-centres are also annealed according to a single-stage process regardless of fluence. The annealing curves allow one to obtain activation energies for recovery. The two-stage type II process is observed only for the F+-like centres in as-received samples, at higher fluences, or in reduced samples. These centres are first annealed in a first stage below 550 K, like in type I, then transform into new paramagnetic centres in a second stage above 550 K. A simple kinetics model is proposed for this process. Complete colour centre bleaching is achieved at about 1000 K

    Superconducting and Normal State Properties of Neutron Irradiated MgB2

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    We have performed a systematic study of the evolution of the superconducting and normal state properties of neutron irradiated MgB2_2 wire segments as a function of fluence and post exposure annealing temperature and time. All fluences used suppressed the transition temperature, Tc, below 5 K and expanded the unit cell. For each annealing temperature Tc recovers with annealing time and the upper critical field, Hc2(T=0), approximately scales with Tc. By judicious choice of fluence, annealing temperature and time, the Tc of damaged MgB2 can be tuned to virtually any value between 5 and 39 K. For higher annealing temperatures and longer annealing times the recovery of Tc tends to coincide with a decrease in the normal state resistivity and a systematic recovery of the lattice parameters.Comment: Updated version, to appear in Phys. Rev.

    Linear optics and quantum maps

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    We present a theoretical analysis of the connection between classical polarization optics and quantum mechanics of two-level systems. First, we review the matrix formalism of classical polarization optics from a quantum information perspective. In this manner the passage from the Stokes-Jones-Mueller description of classical optical processes to the representation of one- and two-qubit quantum operations, becomes straightforward. Second, as a practical application of our classical-\emph{vs}-quantum formalism, we show how two-qubit maximally entangled mixed states (MEMS), can be generated by using polarization and spatial modes of photons generated via spontaneous parametric down conversion.Comment: 13 pages, 8 figure

    Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

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    The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.Comment: 6 pages, 6 figure

    Effects of Neutron Irradiation on Carbon Doped MgB2 Wire Segments

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    We have studied the evolution of superconducting and normal state properties of neutron irradiated Mg(B.962_{.962}C.038_{.038})2_2 wire segments as a function of post exposure annealing time and temperature. The initial fluence fully suppressed superconductivity and resulted in an anisotropic expansion of the unit cell. Superconductivity was restored by post-exposure annealing. The upper critical field, Hc2_{c2}(T=0), approximately scales with Tc_c starting with an undamaged Tc_c near 37 K and Hc2_{c2}(T=0) near 32 T. Up to an annealing temperature of 400 o^ oC the recovery of Tc_c tends to coincide with a decrease in the normal state resistivity and a systematic recovery of the lattice parameters. Above 400 o^ oC a decrease in order along the c- direction coincides with an increase in resistivity, but no apparent change in the evolution of Tc_c and Hc2_{c2}. To first order, it appears that carbon doping and neutron damaging effect the superconducting properties of MgB2_2 independently

    Melting Point and Lattice Parameter Shifts in Supported Metal Nanoclusters

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    The dependencies of the melting point and the lattice parameter of supported metal nanoclusters as functions of clusters height are theoretically investigated in the framework of the uniform approach. The vacancy mechanism describing the melting point and the lattice parameter shifts in nanoclusters with decrease of their size is proposed. It is shown that under the high vacuum conditions (p<10^-7 torr) the essential role in clusters melting point and lattice parameter shifts is played by the van der Waals forces of cluster-substrate interation. The proposed model satisfactorily accounts for the experimental data.Comment: 6 pages, 3 figures, 1 tabl

    Effects of Vacancies near Substitutional Implants on Trapping and Desorption of Helium - A Simulation

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    Trapping of He by vacancies and drainage of He from substitutional implants (Ag and Kr in W) to nearby vacancies are investigated using static lattice calculations. The calculations indicate that drainage of He will occur to vacancies within a radius of 2.5 lattice units from the implant. Furthermore the trapping probability of substitutional and interstitial random walkers on a bcc lattice by substitutional traps or vacancies is calculated. When implantation-produced vacancies are present in the vicinity of the observed trap a shielding effect occurs. Trapping constants are calculated with two random walk models for both the unshielded and the shielded defect. For the latter several configurations were taken. The results show that shielding of a defect by one vacancy at a distance of three lattice units leads already to a reduction of He trapping by that defect of 30% to 40%.

    Measuring the Complete Transverse Spatial Mode Spectrum of a Wave Field

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    We put forward a method that allows the experimental determination of the entire spatial mode spectrum of any arbitrary monochromatic wave field in a plane normal to its propagation direction. For coherent optical fields, our spatial spectrum analyzer can be implemented with a small number of benchmark refractive elements embedded in a single Mach-Zehnder interferometer. We detail an efficient setup for measuring in the Hermite-Gaussian mode basis. Our scheme should also be feasible in the context of atom optics for analyzing the spatial profiles of macroscopic matter waves
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