Self-aligned gate technology for analogue and digital GaAs integrated circuits

non disponibile - not availabl

Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s

In the present paper we evaluated the fabrication process of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT’s) by means of low frequency noise characterizations carried out in the 100Hz-100kHz frequency range. We investigated the spectra of the base current fluctuations. The obtained results are compared with the data reported in the literature. The fabrication technology and the experimental set-up are briefly described

Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing.

In this article we illustrate how the noise performance of ion-implanted MESFET devices can be appreciably improved by means of optimised pre and post implant annealing cycle. With this technique the 12 GHz noise figure of 0.5x300 um devices is reduced from 2.7 dB to 1.8 dB

Self-consistent fully dynamic electro-thermal simulation of power HBTS

A new self-consistent dynamic electro-thermal model for power HBTs is presented coupling a circuit-oriented electricalmodel, fitted on experimental data, with a full frequency domain thermal model. The thermal model provides the exact frequency behaviour of the device thermal impedance through a quasi-3D approach. The electro-thermal self-consistent solution is achieved, in large-signal periodic operation, through Harmonic Balance analysis. The model has been applied to the simulation of some HBT layouts from Alenia Marconi Systems

Heterostructure transistor technology for microwave monolithic integrated circuit applications.

In this article we demonstrate that the HEMT technology can be applied to MESFET based microwave monolithic integrated circuits to yield improved per­formance margins. Typical performance for the low-noise (LNA) and wideband (TWA) amplifiers studied are: for the HEMT-LNA » 2.2 dB noise figure and » 26 dB gain at 12 GHz in comparison with » 2.8 dB noise figure and »20 dB gain for the MESFET-LNA; for the HEMT-TWA » 8 dB. gain in the frequency range 0.2 to 18 GHz as composed to » 6 dB gain for the MESFET-TWA

Process technology evaluation for high yield reproducible HEMT/PM-HEMT MMIC fabrication

In this article we will report on a high yield HEMT/PM-HEMT technology, based an optimised ohmic contact formation and gate recessing. With this technology active device fabrication yields are better than 90% and corresponding key parameter tollerances always better than ± 5%, as required for high yield MMIC fabrication

Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s

In the present paper we evaluated the fabrication process of AlGaAs/GaAs heterojunction Bipolar Transistors (HBT's) by means of low frequency noise characterizations carried out in the 100Hz-100kHz frequency range. We investigated the spectra of the base current fluctuations. The obtained results are compared with the data reported in the literature. The fabrication technology and the experimental set-up are briefly described