Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime

Effect of zinc/cadmium proportion in CdS layers deposited by CBD method

Cadmium poisoning and the cost of panel recovery which is very expensive and difficult in the buffer layers of CdS in solar cell, for these two drawbacks, we do a search on the effect of proportion of zinc/cadmium in the properties layers of CdS. For this, our studies study the properties of CdxZn1-xS layers deposited by chemical bath (CBD). CdZnS thin films were synthesized by chemical bath deposition (CBD) with different deposition protocols to optimize deposition parameters such as temperature, deposition time, ion concentrations and pH. The surface morphology, structural, optical and chemical properties of the CdZnS thin films were studied by SEM, XRD, Raman and UV-visible spectrophotometer. The transmittance is 80% in the visible region 300 nm - 800 nm; the crystalline structure is hexagonal and cubic, the grain size is between 9.95 to 25.82 nm. It is observed that the transmittance and the shape change with the concentration of zinc in the solution; this result favors the application of these films in solar cells application

Photocatalysis of rhodamine B and methyl orange degradation under solar light on ZnO and Cu2O thin films

We report the photocatalytic properties of ZnO and Cu2O thin films deposited on glass substrates at room temperature by DC sputtering and pulsed laser deposition. The photoactivity of the films was investigated through the degradation of rhodamine B (RhB) and methyl orange (MO) under solar light. In order to select the most suitable film of ZnO for the of RhB and MO degradation, the relationship between the characteristics (e.g. energy levels and defects concentration) of ZnO films and their effectiveness in the photocatalytic yield of RhB and MO been studied, where several films were deposited by using different oxygen partial pressures (PO2: 0.05–1.3 mbar), while Cu2O films were grown under a pressure of 0.01 mbar. The XRD patterns show that all ZnO films have (002) preferential orientation, and crystallite size increases from 73 to 122 nm raising PO2. The gap Eg of ZnO (3.26 and 4.15 eV) depends on PO2, and the films present photoluminescence emission in the UV–Vis-near IR region. On the basis of structural, optical and electrical characterizations of both films, a comparative study was carried out on the dyes degradation. Cu2O films exhibit a high photoactivity with MO (81.69%) under solar light (6 h), whilst for RhB the best elimination rate (60.85%) was achieved with ZnO films deposited at 0.1 mbar, which were also the ones exhibiting the highest PL peak intensity at the characteristic absorption wavelength of RhB (553 nm)

Rhodamine (B) photocatalysis under solar light on high crystalline ZnO films grown by home-made DC sputtering

ZnO thin films were deposited by home-made DC sputtering of zinc target under mixed gases (Argon, Oxygen) plasma on glass substrates. Films were deposited by varying oxygen partial pressure (PO2) from 0.09 to 1.3 mbar in the deposition chamber, at a fixed substrate temperature of 100 °C. The samples were characterized by photoluminescence (PL), X-ray diffraction (XRD), optical transmissions (UV–vis), scanning electron microscopy (SEM) and electrical (Hall effect) measurements. The results indicate that by varying the oxygen pressure in the deposition chamber, the films show a precise and well defined photoluminescence emissions for each range of pressure covering almost the entire visible domain (UV, UV-Violet, Violet, Blue, and Red) with high intensities. Moreover, the deposited films have different defects levels. The XRD analysis indicates that the films are well grown along the c-axis peak, but with different crystalline quality. Optical measurements reveal a high transmission, up to 90%, in the spectral region between 400 and 2500 nm and a large variation of the optical band gap (3.16–4.34 eV). As an application of the deposited ZnO films, the photo-catalytic degradation of a synthetic solution of Rhodamine B (RhB) poured on a ZnO thin film was successfully achieved and an elimination rate of 38% was obtained after exposing the film to solar light for 3 h