Resistive switching in β-SrV6O15

Abstract.: We investigate the pressure and temperature behavior of current-dependent resistivity of β-SrV6O15. We observe a switching between states of different resistivities in the insulating state of β-SrV6O15. In the low pressure phase, the resistive switching appears at temperatures below the semiconductor-insulator transition. In the high pressure phase, under ~1.6GPa, the switching appears in the temperature range of the phase transition. The existence of switching may imply an important role of strontium off-stoichiometry for the electrical transport in β-SrV6O15. No electric-field-induced enhancement of the conductivity is observed. However, the conduction is significantly nonlinear under ~1.6GPa, indicating that the charge order pattern in the high pressure phase is considerably different from that of the low pressure phas

Collective Charge Excitations below the Metal-to-Insulator Transition in BaVS3

The charge response in the barium vanadium sulfide (BaVS3) single crystals is characterized by dc resistivity and low frequency dielectric spectroscopy. A broad relaxation mode in MHz range with huge dielectric constant ~= 10^6 emerges at the metal-to-insulator phase transition TMI ~= 67 K, weakens with lowering temperature and eventually levels off below the magnetic transition Tchi ~= 30 K. The mean relaxation time is thermally activated in a manner similar to the dc resistivity. These features are interpreted as signatures of the collective charge excitations characteristic for the orbital ordering that gradually develops below TMI and stabilizes at long-range scale below Tchi.Comment: 6 pages, 3 figures, submitted to PR

3D Dirac semimetal Cd3As2: A review of material properties

Cadmium arsenide (Cd3As2) - a time-honored and widely explored material in solid-state physics - has recently attracted considerable attention. This was triggered by a theoretical prediction concerning the presence of 3D symmetry-protected massless Dirac electrons, which could turn Cd3As2 into a 3D analogue of graphene. Subsequent extended experimental studies have provided us with compelling experimental evidence of conical bands in this system, and revealed a number of interesting properties and phenomena. At the same time, some of the material properties remain the subject of vast discussions despite recent intensive experimental and theoretical efforts, which may hinder the progress in understanding and applications of this appealing material. In this review, we focus on the basic material parameters and properties of Cd3As2, in particular those which are directly related to the conical features in the electronic band structure of this material. The outcome of experimental investigations, performed on Cd3As2 using various spectroscopic and transport techniques within the past sixty years, is compared with theoretical studies. These theoretical works gave us not only simplified effective models, but more recently, also the electronic band structure calculated numerically using ab initio methods.Comment: 16 pages, 16 figure

Phonon anomaly in BaFe2As2

The detailed optical properties of BaFe2As2 have been determined over a wide frequency range above and below the structural and magnetic transition at T_N = 138 K. A prominent in-plane infrared-active mode is observed at 253 cm^{-1} (31.4 meV) at 295 K. The frequency of this vibration shifts discontinuously at T_N; for T < T_N the frequency of this mode displays almost no temperature dependence, yet it nearly doubles in intensity. This anomalous behavior appears to be a consequence of orbital ordering in the Fe-As layers.Comment: 4 pages, 3 figures and one table (minor revisions

Optical properties of BiTeBr and BiTeCl

We present a comparative study of the optical properties - reflectance, transmission and optical conductivity - and Raman spectra of two layered bismuth-tellurohalides BiTeBr and BiTeCl at 300 K and 5 K, for light polarized in the a-b planes. Despite different space groups, the optical properties of the two compounds are very similar. Both materials are doped semiconductors, with the absorption edge above the optical gap which is lower in BiTeBr (0.62 eV) than in BiTeCl (0.77 eV). The same Rashba splitting is observed in the two materials. A non-Drude free carrier contribution in the optical conductivity, as well as three Raman and two infrared phonon modes, are observed in each compound. There is a dramatic difference in the highest infrared phonon intensity for the two compounds, and a difference in the doping levels. Aspects of the strong electron-phonon interaction are identified. Several interband transitions are assigned, among them the low-lying absorption $\beta$ which has the same value 0.25 eV in both compounds, and is caused by the Rashba spin splitting of the conduction band. An additional weak transition is found in BiTeCl, caused by the lower crystal symmetry.Comment: Accepted in PR

Optical conductivity of nodal metals

Fermi liquid theory is remarkably successful in describing the transport and optical properties of metals; at frequencies higher than the scattering rate, the optical conductivity adopts the well-known power law behavior $\sigma_1(\omega) \propto \omega^{-2}$. We have observed an unusual non-Fermi liquid response $\sigma_1(\omega) \propto \omega^{-1\pm 0.2}$ in the ground states of several cuprate and iron-based materials which undergo electronic or magnetic phase transitions resulting in dramatically reduced or nodal Fermi surfaces. The identification of an inverse (or fractional) power-law behavior in the residual optical conductivity now permits the removal of this contribution, revealing the direct transitions across the gap and allowing the nature of the electron-boson coupling to be probed. The non-Fermi liquid behavior in these systems may be the result of a common Fermi surface topology of Dirac cone-like features in the electronic dispersion.Comment: 8 pages including supplemental informatio

BiTeCl and BiTeBr: a comparative high-pressure optical study

We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $\beta$ between two Rashba-split conduction bands, and the absorption $\gamma$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $\beta$ is approximately constant with pressure and $\gamma$ decreases, in agreement with band structure calculations. In BiTeCl, a clear pressure-induced phase transition at 6~GPa leads to a different ground state. For BiTeBr, the pressure evolution is more subtle, and we discuss the possibility of closing and reopening of the band gap. Our data is consistent with a Weyl phase in BiTeBr at 5$-$6~GPa, followed by the onset of a structural phase transition at 7~GPa.Comment: are welcom

Manifestations of fine features of the density of states in the transport properties of KOs2O6

We performed high-pressure transport measurements on high-quality single crystals of KOs2O6, a beta-pyrochlore superconductor. While the resistivity at high temperatures might approach saturation, there is no sign of saturation at low temperatures, down to the superconducting phase. The anomalous resistivity is accompanied by a nonmetallic behavior in the thermoelectric power (TEP) up to temperatures of at least 700 K, which also exhibits a broad hump with a maximum at 60 K. The pressure influences mostly the low-energy electronic excitations. A simple band model based on enhanced density of states in a narrow window around the Fermi energy (EF) explains the main features of this unconventional behavior in the transport coefficients and its evolution under pressure