Heterojunction solar cell calculations

Solar cell efficiencies computed for semiconductor heterojunction cell

Studies of heteroface solar cell performance

The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968

Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge

Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Fabrication problems and device characteristics of ZnSe-GaAs and Ge-GaAs heterojunction

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunction

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969

Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu

Bias-Dependent Generation and Quenching of Defects in Pentacene

We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.Comment: 10 pages, 3 figure

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher