Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Ajudes: National Key Research and Development Program of "Strategic Advanced Electronic Materials" under Grant 2016YFB0401100 and in part by the NSFC of China under Grant 61274083 and Grant 61334008.Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper providesa comprehensive reviewof the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed

A clinical genetic method to identify mechanisms by which pain causes depression and anxiety

BACKGROUND: Pain patients are often depressed and anxious, and benefit less from psychotropic drugs than pain-free patients. We hypothesize that this partial resistance is due to the unique neurochemical contribution to mood by afferent pain projections through the spino-parabrachial-hypothalamic-amygdalar systems and their projections to other mood-mediating systems. New psychotropic drugs for pain patients might target molecules in such brain systems. We propose a method to prioritize molecular targets by studying polymorphic genes in cohorts of patients undergoing surgical procedures associated with a variable pain relief response. We seek molecules that show a significant statistical interaction between (1) the amount of surgical pain relief, and (2) the alleles of the gene, on depression and anxiety during the first postoperative year. RESULTS: We collected DNA from 280 patients with sciatica due to a lumbar disc herniation, 162 treated surgically and 118 non-surgically, who had been followed for 10 years in the Maine Lumbar Spine Study, a large, prospective, observational study. In patients whose pain was reduced >25% by surgery, symptoms of depression and anxiety, assessed with the SF-36 Mental Health Scale, improved briskly at the first postoperative measurement. In patients with little or no surgical pain reduction, mood scores stayed about the same on average. There was large inter-individual variability at each level of residual pain. Polymorphisms in three pre-specified pain-mood candidate genes, catechol-O-methyl transferase (COMT), serotonin transporter, and brain-derived neurotrophic factor (BDNF) were not associated with late postoperative mood or with a pain-gene interaction on mood. Although the sample size did not provide enough power to persuasively search through a larger number of genes, an exploratory survey of 25 other genes provides illustrations of pain-gene interactions on postoperative mood – the mu opioid receptor for short-term effects of acute sciatica on mood, and the galanin-2 receptor for effects of unrelieved post-discectomy pain on mood one year after surgery. CONCLUSION: Genomic analysis of longitudinal studies of pain, depression, and anxiety in patients undergoing pain-relieving surgery may help to identify molecules through which pain alters mood. Detection of alleles with modest-sized effects will require larger cohorts

Truly form-factor–free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices

Funding Information: This work was supported by the European Commission (H2020, 1D-NEON, grant agreement ID: 685758). J.M.K. and L.G.O. acknowledge the support from the U.K. Research and Innovation (EPSRC, EP/P027628/1). We thank Y. Bernstein and J. Faulkner for helping with grammar check. Funding Information: Acknowledgments Funding:ThisworkwassupportedbytheEuropeanCommission(H2020,1D-NEON,grant agreementID:685758).J.M.K.andL.G.O.acknowledgethesupportfromtheU.K.Researchand Innovation(EPSRC,EP/P027628/1).W ethankY .BernsteinandJ.Faulknerforhelpingwith grammarcheck.Authorcontributions:S.L.andJ.M.K.conceivedtheproject.S.L.,L.G.O.,P .B., R.Martins,andJ.M.K.supervisedtheproject.S.L.andH.L.developedF-PD.S.L.,Y .-W .L., G.-H.A., D.-W .S., J.I.S.,andS.C.developedF-SC.C.L.F ., A.S.,R.I.,P .B., andR.Martinsdevelopedfiber transistor.S.L.,H.L.,andS.C.developedF-LED.ThefiberdeviceswereevaluatedbyS.L.,H.W .C., D.-W .S., H.L.,S.J.,S.D.H.,S.Y .B., S.Z.,W .H.-C., Y .-H.S., X.-B.F ., T .H.L., J.-W .J., andY .K. The developmentofweavingprocesswasconductedbyS.L.,H.W .C., F .M.M., P .J., andV .G.C. Thelaser interconnectionwasdevelopedbyS.L.,H.W .C., K.U.,M.E.,andM.S.Thetextiledemonstrations werecharacterizedbyS.L.,H.W .C., D.-W .S., J.Y ., S.S.,U.E.,S.N.,A.C.,A.M.,R.Momentè,J.G.,N.D., S.M.,C.-H.K.,M.L.,A.N.,D.J.,M.C.,andY .C. ThismanuscriptwaswrittenbyS.L.andJ.M.K.and reviewed by H.W .C., D.-W .S., M.C.,L.G.O., P .B., E.F ., and G.A.J.A. All authors discussed the results andcommentedonthemanuscript.Competinginterests:Theauthorsdeclarethattheyhave nocompetinginterests.Dataandmaterialsavailability:Alldataneededtoevaluatethe conclusionsinthepaperarepresentinthepaperand/ortheSupplementaryMaterials. Publisher Copyright: Copyright © 2023 The Authors, some rights reserved.An integrated textile electronic system is reported here, enabling a truly free form factor system via textile manufacturing integration of fiber-based electronic components. Intelligent and smart systems require freedom of form factor, unrestricted design, and unlimited scale. Initial attempts to develop conductive fibers and textile electronics failed to achieve reliable integration and performance required for industrial-scale manufacturing of technical textiles by standard weaving technologies. Here, we present a textile electronic system with functional one-dimensional devices, including fiber photodetectors (as an input device), fiber supercapacitors (as an energy storage device), fiber field-effect transistors (as an electronic driving device), and fiber quantum dot light-emitting diodes (as an output device). As a proof of concept applicable to smart homes, a textile electronic system composed of multiple functional fiber components is demonstrated, enabling luminance modulation and letter indication depending on sunlight intensity.publishersversionpublishe

HER2-enriched subtype and novel molecular subgroups drive aromatase inhibitor resistance and an increased risk of relapse in early ER+/HER2+ breast cancer

BACKGROUND: Oestrogen receptor positive/ human epidermal growth factor receptor positive (ER+/HER2+) breast cancers (BCs) are less responsive to endocrine therapy than ER+/HER2- tumours. Mechanisms underpinning the differential behaviour of ER+HER2+ tumours are poorly characterised. Our aim was to identify biomarkers of response to 2 weeks’ presurgical AI treatment in ER+/HER2+ BCs. METHODS: All available ER+/HER2+ BC baseline tumours (n=342) in the POETIC trial were gene expression profiled using BC360™ (NanoString) covering intrinsic subtypes and 46 key biological signatures. Early response to AI was assessed by changes in Ki67 expression and residual Ki67 at 2 weeks (Ki672wk). Time-To-Recurrence (TTR) was estimated using Kaplan-Meier methods and Cox models adjusted for standard clinicopathological variables. New molecular subgroups (MS) were identified using consensus clustering. FINDINGS: HER2-enriched (HER2-E) subtype BCs (44.7% of the total) showed poorer Ki67 response and higher Ki672wk (p<0.0001) than non-HER2-E BCs. High expression of ERBB2 expression, homologous recombination deficiency (HRD) and TP53 mutational score were associated with poor response and immune-related signatures with High Ki672wk. Five new MS that were associated with differential response to AI were identified. HER2-E had significantly poorer TTR compared to Luminal BCs (HR 2.55, 95% CI 1.14–5.69; p=0.0222). The new MS were independent predictors of TTR, adding significant value beyond intrinsic subtypes. INTERPRETATION: Our results show HER2-E as a standardised biomarker associated with poor response to AI and worse outcome in ER+/HER2+. HRD, TP53 mutational score and immune-tumour tolerance are predictive biomarkers for poor response to AI. Lastly, novel MS identify additional non-HER2-E tumours not responding to AI with an increased risk of relapse

General anaesthetic and airway management practice for obstetric surgery in England: a prospective, multi-centre observational study

There are no current descriptions of general anaesthesia characteristics for obstetric surgery, despite recent changes to patient baseline characteristics and airway management guidelines. This analysis of data from the direct reporting of awareness in maternity patients' (DREAMY) study of accidental awareness during obstetric anaesthesia aimed to describe practice for obstetric general anaesthesia in England and compare with earlier surveys and best-practice recommendations. Consenting patients who received general anaesthesia for obstetric surgery in 72 hospitals from May 2017 to August 2018 were included. Baseline characteristics, airway management, anaesthetic techniques and major complications were collected. Descriptive analysis, binary logistic regression modelling and comparisons with earlier data were conducted. Data were collected from 3117 procedures, including 2554 (81.9%) caesarean deliveries. Thiopental was the induction drug in 1649 (52.9%) patients, compared with propofol in 1419 (45.5%). Suxamethonium was the neuromuscular blocking drug for tracheal intubation in 2631 (86.1%), compared with rocuronium in 367 (11.8%). Difficult tracheal intubation was reported in 1 in 19 (95%CI 1 in 16-22) and failed intubation in 1 in 312 (95%CI 1 in 169-667). Obese patients were over-represented compared with national baselines and associated with difficult, but not failed intubation. There was more evidence of change in practice for induction drugs (increased use of propofol) than neuromuscular blocking drugs (suxamethonium remains the most popular). There was evidence of improvement in practice, with increased monitoring and reversal of neuromuscular blockade (although this remains suboptimal). Despite a high risk of difficult intubation in this population, videolaryngoscopy was rarely used (1.9%)

The effect of ion implantation on the electrical and structural properties of some selected polymers

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The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures

The relaxation of ion beam synthesised SiGe alloys occurs during solid phase epitaxial growth (SPEG) by a roughening of the amorphous/crystalline (a/c) interface, leading to the formation of extended defects. SiGe/Si structures have been formed by implantation of Ge+ ions at energies of 70 keV and 400 keV and doses above the critical value for strain relaxation, followed by post-amorphisation to a depth of approx. 1 micro-m and regrowth at 700°C. TEM and RBS analysis of the regrown structures show that relaxation-induced stacking faults (SFs) are nucleated in the vicinity of the peak of the Ge concentration. For an implantation energy of 70 keV, SFs are the only defects observed and they extend up to the surface. For an implantation energy of 400 keV, the SFs terminate within the bulk far from the surface while “hairpin” dislocations are also formed and extend up to the surface. These results are explained in terms of the ratio between the depth at which SFs are nucleated and the roughness of the a/c interface at that depth. Varying the defect nucleation depth by removing a surface layer from the structures implanted at 400 keV prior to SPEG does not result in a change of the size of the SFs, while “hairpin” dislocations are still formed, suggesting that the roughness of the a/c interface during regrowth is only determined by the Ge content in the alloy.</p

The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures

The relaxation of ion beam synthesised SiGe alloys occurs during solid phase epitaxial growth (SPEG) by a roughening of the amorphous/crystalline (a/c) interface, leading to the formation of extended defects. SiGe/Si structures have been formed by implantation of Ge+ ions at energies of 70 keV and 400 keV and doses above the critical value for strain relaxation, followed by post-amorphisation to a depth of approx. 1 micro-m and regrowth at 700°C. TEM and RBS analysis of the regrown structures show that relaxation-induced stacking faults (SFs) are nucleated in the vicinity of the peak of the Ge concentration. For an implantation energy of 70 keV, SFs are the only defects observed and they extend up to the surface. For an implantation energy of 400 keV, the SFs terminate within the bulk far from the surface while “hairpin” dislocations are also formed and extend up to the surface. These results are explained in terms of the ratio between the depth at which SFs are nucleated and the roughness of the a/c interface at that depth. Varying the defect nucleation depth by removing a surface layer from the structures implanted at 400 keV prior to SPEG does not result in a change of the size of the SFs, while “hairpin” dislocations are still formed, suggesting that the roughness of the a/c interface during regrowth is only determined by the Ge content in the alloy.</p

Ion implantation of stainless steel heater alloys for anti-fouling applications

Ion implantation of fluorine and silicon ions into stainless steel heater alloys inhibits the accumulation of CaSO4 deposits when used in an saturated aqueous solution of 1.6 g/l concentration. This anti-fouling action leads to an increase in the heat transfer coefficient by more than 100% under a heat flux of 200 kW/m2 and 200% under a heat flux of 100 kW/m2 when compared to unimplanted heater elements. Heat transfer data indicate that following a heating cycle of 4000 minutes a thick layer of CaSO4 deposit remain on unimplanted heater surfaces. Similar CaSO4 deposits also formed on the implanted alloys initially but did not remain after 1000 minutes causing a significant recovery in the heat transfer coefficient. Ion implanting these alloys leads to surface energy reduction and hence the anti-fouling action observed