57 research outputs found

    DTMOS-Based 0.4V Ultra Low-Voltage Low-Power VDTA Design and Its Application to EEG Data Processing

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    In this paper, an ultra low-voltage, ultra low-power voltage differencing transconductance amplifier (VDTA) is proposed. DTMOS (Dynamic Threshold Voltage MOS) transistors are employed in the design to effectively use the ultra low supply voltage. The proposed VDTA is composed of two operational transconductance amplifiers operating in the subthreshold region. Using TSMC 0.18µm process technology parameters with symmetric ±0.2V sup¬ply voltage, the total power consumption of the VDTA block is found as just 5.96 nW when the transconductances have 3.3 kHz, 3 dB bandwidth. The proposed VDTA circuit is then used in a fourth-order double-tuned band-pass filter for processing real EEG data measurements. The filter achieves close to 64 dB dynamic range at 2% THD with a total power consumption of 12.7 nW

    Sixteen pairs of 4-component spinors for SL(4,C) and four types of transformations with a conjugate space which has no counterpart in SL(2,C)

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    We define a spinor-Minkowski metric for SL(4,C). It is not a trivial generalization of the SL(2,C) metric and it involves the Minkowskian one. We define 4x4 version of the Pauli matrices and eight 4-component associated generalized eigenvectors that can be regarded as undotted covariant spinors. The 4-component spinors can be grouped into four categories. Each category transforms in its own way. The outer products of pairwise combinations of 4-component spinors can be associated with 4-vectors. Including the dotted covariant, undotted and dotted contravariant forms totally we have sixteen pairs of spinors. Eight of them live in the conjugate space which has no countepart in SL(2,C).Conjugate space, rotations in the spinor space, factorization of Lorentz transformation matrix, spinor-Minkowski metric for SL(4, C), 4x4 version of Pauli matrices, 4-component spinors for SL(4, C), four types of spinor pairs, four types of transformations, observables and states in SL(4,C), Dirac equation in SL(4,C

    New Simple CMOS Realization of Voltage Differencing Transconductance Amplifier and Its RF Filter Application

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    The voltage differencing transconductance amplifier (VDTA) is a recently introduced active element for analog signal processing. However, the realization of VDTA is not given by any author yet. In this work, a new and simple CMOS realization of VDTA is presented. The proposed block has two voltage inputs and two kinds of current output, so it is functional for voltage- and transconductance-mode operation. Furthermore, VDTA exhibits two different values of transconductance so that there is no need to external resistors for VDTA based applications which seems to be a good advantage for analog circuit designer. A CMOS implementation of VDTA and a voltage-mode VDTA based filter are proposed and simulated. An application example of fourth order flat-band band-pass amplifier is given and the performance of the circuit is demonstrated by comparing the theory and simulation

    Automation of dipole moment measurements using microprocessor controlled system

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    A microprocessor controlled instrument that; can be used in physical chemistry research laboratories has been designed and constructed. The intended use is the measurement,of the dipole moment and determination of the temperature dependency of the dipole moment far polar substances; especially for macromolecules

    A new study on spin-on-silica for multilevel interconnect applications

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    In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved

    Spinor Representations of the Lorentz Group

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    Novel two OTRA-based grounded immitance simulator topologies

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    Three new operational transresistance amplifier (OTRA)-based grounded parallel immitance simulator topologies are presented. The proposed circuits use two OTRAs and require fewer passive components than most of the counterparts in the literature. The performance of the proposed immitance simulators is demonstrated on a fourth-order bandpass filter. PSPICE simulation results are included to verify theory
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