3,483 research outputs found

    Digging supplementary buried channels: investigating the notch architecture within the CCD pixels on ESA's Gaia satellite

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    The European Space Agency (ESA) Gaia satellite has 106 CCD image sensors which will suffer from increased charge transfer inefficiency (CTI) as a result of radiation damage. To aid the mitigation at low signal levels, the CCD design includes Supplementary Buried Channels (SBCs, otherwise known as `notches') within each CCD column. We present the largest published sample of Gaia CCD SBC Full Well Capacity (FWC) laboratory measurements and simulations based on 13 devices. We find that Gaia CCDs manufactured post-2004 have SBCs with FWCs in the upper half of each CCD that are systematically smaller by two orders of magnitude (<50 electrons) compared to those manufactured pre-2004 (thousands of electrons). Gaia's faint star (13 < G < 20 mag) astrometric performance predictions by Prod'homme et al. and Holl et al. use pre-2004 SBC FWCs as inputs to their simulations. However, all the CCDs already integrated onto the satellite for the 2013 launch are post-2004. SBC FWC measurements are not available for one of our five post-2004 CCDs but the fact it meets Gaia's image location requirements suggests it has SBC FWCs similar to pre-2004. It is too late to measure the SBC FWCs onboard the satellite and it is not possible to theoretically predict them. Gaia's faint star astrometric performance predictions depend on knowledge of the onboard SBC FWCs but as these are currently unavailable, it is not known how representative of the whole focal plane the current predictions are. Therefore, we suggest Gaia's initial in-orbit calibrations should include measurement of the onboard SBC FWCs. We present a potential method to do this. Faint star astrometric performance predictions based on onboard SBC FWCs at the start of the mission would allow satellite operating conditions or CTI software mitigation to be further optimised to improve the scientific return of Gaia.Comment: Accepted for publication in MNRAS, 16 pages, 19 figure

    Influence of laser power on tensile properties and material characteristics of laser-sintered UHMWPE

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    Ultra High Molecular Weight Polyethylene (UHMWPE) has excellent properties, such as high mechanical performance, low friction, high wear and chemical resistance but so far there has been limited use in additive manufacturing (AM). Laser sintering of polymers is one of the most promising AM technologies due to its ability to produce complex geometries with accurate dimensions and good mechanical properties. Consequently, this study investigates the influence of laser power on physical and mechanical properties of UHMWPE parts produced by laser sintering. In particular mechanical properties, such as Ultimate Tensile Strength (UTS), Young’s Modulus and elongation at break were evaluated alongside relative density, dilation and shrinkage. Finally, the fracture surface of the tensile test specimens was examined by electron microscopy. Results show that within a laser power range of 6–12 W there appears to be an optimum where tensile strength and relative density reach a maximum, dilation is minimised and where elongation increases with laser power. UTS up to 2.42 MPa, modulus up to 72.6 MPa and elongation at break up to 51.4% were observed. Relative density and part dimensions are also influenced by laser power

    Voltage controlled nuclear polarization switching in a single InGaAs quantum dot

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    Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear spin pumping. We also find evidence for the resonant LO-phonon-mediated electron co-tunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear spin pumping rate.Comment: 5 pages, 2 figures, submitted to Phys Rev

    On the diffusion of lattice matched InGaAs/InP microstructures

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    Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Bollet et al., J. Appl. Phys. 93, 3881 (2003) and may be found at http://link.aip.org/link/?jap/93/388

    Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation

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    We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In(0.23)Ga(0.77)As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.Comment: 4 pages, 4 figures, to be published in J. Phys. Conf. Ser. for QD201

    Photoluminescence upconversion at GaAs/InGaP2 interfaces driven by a sequential two-photon absorption mechanism

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    This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs/InGaP2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGaP2 material, arising from partial ordering of the InGaP2. We also observed the excitation of a two-dimensional electron gas at the GaAs/InGaP2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron gas at the GaAs/InGaP2 interface, suggesting that charge accumulation at the interface can play a crucial role in the upconversion process
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