Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid-helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.Comment: 6 pages, 5 figure

Leed Investigations Of A Cubic AL-PD-MN (110) Alloy

An Al-Pd-Mn cubic alloy having a bulk chemical composition somewhat analogous to that of the icosahedral Al-Pd-Mn quasicrystal is studied. Our goal is to compare the surface structure and properties of the cubic alloy with those of the quasicrystalline alloy. In this paper, we report the first observations for the (110) surface of the cubic alloy using (primarily) low energy electron diffraction (LEED). The surface is prepared by sputtering and annealing in ultrahigh vacuum (UHV). In addition to the substrate LEED pattern, at least three superstructures evolve sequentially with annealing temperature

From colonial port to socialist metropolis: imperialist legacies and the making of ‘New Dalian’

This article explores the transformation of the city of Dalian from a colonial export port to an industrialized core city of the Japanese wartime empire and finally a model production city of the People's Republic of China. These shifts in the economic and political function of the city also resulted in complex identity issues for Dalian's urban residents. Dalian's rise reminds that there were trajectories of urban development and modernity in China which were different from that of Shanghai. Dalian provides an important, local view of the transition from empire to nation in this strategically important part of Manchuria

Monolithic thulium fiber laser with 567 W output power at 1970 nm

We report on a monolithic thulium fiber laser with 567 W output power at 1970 nm which, to the best of our knowledge, is the highest power reported so far directly from a thulium oscillator. This is achieved by optimization of the splice parameters for the active fiber (minimizing signal light in the fiber cladding) and direct water cooling. Dual transverse mode operation is visible from the optical spectrum and can be deduced from the measured beam quality of M2 = 2.6

Surface preparation and characterization of the icosahedral Al-Pd-Mn-Ga quasicrystal

Auger electron spectroscopy and low-energy electron diffraction (LEED) provide basic information about the structure and composition of the fivefold surface of the quaternary quasicrystal, icosahedral Al67Pd4Mn21Ga8. Surface preparation techniques established previously for two of the icosahedral ternary alloys, Al-Pd-Mn and Al-Cu-Fe, appear to be similarly effective for Al-Pd-Mn-Ga. After annealing in the range 600-950 K, the surface concentration of Ga is constant and low. After annealing in the range 900-950 K, a good LEED pattern is obtained. LEED indicates that Ga changes the surface structure significantly

Surface preparation and characterization of the icosahedral Al-Pd-Mn-Ga quasicrystal

Auger electron spectroscopy and low-energy electron diffraction (LEED) provide basic information about the structure and composition of the fivefold surface of the quaternary quasicrystal, icosahedral Al67Pd4Mn21Ga8. Surface preparation techniques established previously for two of the icosahedral ternary alloys, Al-Pd-Mn and Al-Cu-Fe, appear to be similarly effective for Al-Pd-Mn-Ga. After annealing in the range 600-950 K, the surface concentration of Ga is constant and low. After annealing in the range 900-950 K, a good LEED pattern is obtained. LEED indicates that Ga changes the surface structure significantly