Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells

We investigate acoustic and electromagnetic emission from optically excited strained piezoelectric In0.2Ga0.8N/GaN multiple quantum wells (MQWs), using optical pump-probe spectroscopy, time-resolved Brillouin scattering, and THz emission spectroscopy. A direct comparison of detected acoustic signals and THz electromagnetic radiation signals demonstrates that transient strain generation in InGaN/GaN MQWs is correlated with electromagnetic THz generation, and both types of emission find their origin in ultrafast dynamical screening of the built-in piezoelectric field in the MQWs. The measured spectral intensity of the detected Brillouin signal corresponds to a maximum strain amplitude of generated acoustic pulses of 2%. This value coincides with the static lattice-mismatch-induced strain in In0.2Ga0.8N/GaN, demonstrating the total release of static strain in MQWs via impulsive THz acoustic emission. This confirms the ultrafast dynamical screening mechanism in MQWs as a highly efficient method for impulsive strain generatio

Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V-n, where n similar to 3 at current densities appropriate to laser operation. (C) 2011 American Institute of Physics. (doi:10.1063/1.3589974

Accrediting outputs of noisy intermediate-scale quantum computing devices

We present an accreditation protocol for the outputs of noisy intermediate-scale quantum devices. By testing entire circuits rather than individual gates, our accreditation protocol can provide an upper-bound on the variation distance between noisy and noiseless probability distribution of the outputs of the target circuit of interest. Our accreditation protocol requires implementation of quantum circuits no larger than the target circuit, therefore it is practical in the near term and scalable in the long term. Inspired by trap-based protocols for the verification of quantum computations, our accreditation protocol assumes that noise in single-qubit gates is bounded (but potentially gate-dependent) in diamond norm. We allow for arbitrary spatial and temporal correlations in the noise affecting state preparation, measurements and two-qubit gates. We describe how to implement our protocol on real-world devices, and we also present a novel cryptographic protocol (which we call `mesothetic' protocol) inspired by our accreditation protocol.Comment: Accepted versio

The Born supremacy: quantum advantage and training of an Ising Born machine

The search for an application of near-term quantum devices is widespread. Quantum Machine Learning is touted as a potential utilisation of such devices, particularly those which are out of the reach of the simulation capabilities of classical computers. In this work, we propose a generative Quantum Machine Learning Model, called the Ising Born Machine (IBM), which we show cannot, in the worst case, and up to suitable notions of error, be simulated efficiently by a classical device. We also show this holds for all the circuit families encountered during training. In particular, we explore quantum circuit learning using non-universal circuits derived from Ising Model Hamiltonians, which are implementable on near term quantum devices. We propose two novel training methods for the IBM by utilising the Stein Discrepancy and the Sinkhorn Divergence cost functions. We show numerically, both using a simulator within Rigetti's Forest platform and on the Aspen-1 16Q chip, that the cost functions we suggest outperform the more commonly used Maximum Mean Discrepancy (MMD) for differentiable training. We also propose an improvement to the MMD by proposing a novel utilisation of quantum kernels which we demonstrate provides improvements over its classical counterpart. We discuss the potential of these methods to learn `hard' quantum distributions, a feat which would demonstrate the advantage of quantum over classical computers, and provide the first formal definitions for what we call `Quantum Learning Supremacy'. Finally, we propose a novel view on the area of quantum circuit compilation by using the IBM to `mimic' target quantum circuits using classical output data only.Comment: v3 : Close to journal published version - significant text structure change, split into main text & appendices. See v2 for unsplit version; v2 : Typos corrected, figures altered slightly; v1 : 68 pages, 39 Figures. Comments welcome. Implementation at https://github.com/BrianCoyle/IsingBornMachin

Verification of Quantum Computation: An Overview of Existing Approaches

International audienc

Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures

We present direct evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1-xAs and InGaP2/AlxGa1-xAs heterostructures using two-color picosecond and continuous-wave photoluminescence experiments. We show information about the lifetime of the defect states that participate in the two-step absorption process. As a result, we conclude that the long-lived states rather than excitons play the dominant role in the two-step absorption process. We also study the possible contribution of the two-step absorption process to Stokes carrier transfer in GaAs/AlxGa1-xAs asymmetric double quantum well structuresclos

Methods for classically simulating noisy networked quantum architectures

As research on building scalable quantum computers advances, it is important to be able to certify their correctness. Due to the exponential hardness of classically simulating quantum computation, straight-forward verification through classical simulation fails. However, we can classically simulate small scale quantum computations and hence we are able to test that devices behave as expected in this domain. This constitutes the first step towards obtaining confidence in the anticipated quantum-advantage when we extend to scales which can no longer be simulated. Realistic devices have restrictions due to their architecture and limitations due to physical imperfections and noise. Here we extend the usual ideal simulations by considering those effects. We provide a general methodology for constructing realistic simulations emulating the physical system which will both provide a benchmark for realistic devices, and guide experimental research in the quest for quantum-advantage. We exemplify our methodology by simulating a networked architecture and corresponding noise-model; in particular that of the device developed in the Networked Quantum Information Technologies Hub (NQIT). For our simulations we use, with suitable modification, the classical simulator of of Bravyi and Gosset. The specific problems considered belong to the class of Instantaneous Quantum Polynomial-time (IQP) problems, a class believed to be hard for classical computing devices, and to be a promising candidate for the first demonstration of quantum-advantage. We first consider a subclass of IQP, defined by Bermejo-Vega et al, involving two-dimensional dynamical quantum simulators, before moving to more general instances of IQP, but which are still restricted to the architecture of NQIT.Comment: 55 pages, 16 figure

Rekombination und Korrelation intrinsischer elektronischer Anregungen in Halbleitern

SIGLEAvailable from TIB Hannover: F93B203 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on non-polar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures