70 research outputs found

    Diverse aging rates in ectothermic tetrapods provide insights for the evolution of aging and longevity

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    Comparative studies of mortality in the wild are necessary to understand the evolution of aging; yet, ectothermic tetrapods are underrepresented in this comparative landscape, despite their suitability for testing evolutionary hypotheses. We present a study of aging rates and longevity across wild tetrapod ectotherms, using data from 107 populations (77 species) of nonavian reptiles and amphibians. We test hypotheses of how thermoregulatory mode, environmental temperature, protective phenotypes, and pace of life history contribute to demographic aging. Controlling for phylogeny and body size, ectotherms display a higher diversity of aging rates compared with endotherms and include phylogenetically widespread evidence of negligible aging. Protective phenotypes and life-history strategies further explain macroevolutionary patterns of aging. Analyzing ectothermic tetrapods in a comparative context enhances our understanding of the evolution of aging.Animal science

    Genetic and environmental variability of adult size in some stockes of the edible snail, Helix aspersa

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    Characterization of vacancy-typedefects in heteroepitaxial GaN grown by Low-Energy Plasma-Enhanced VaporPhase Epitaxy

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    The defect concentration in thin GaN layers was estimated by means of positron annihilation spectroscopy. Positron lifetime and Doppler broadening of the annihilation radiation were used. A comparative study of GaN films grown with different techniques was performed. Specific attention has been given to the new low energy plasma enhanced vapor phase epitaxy (LEPEVPE) growth technique. A very high Ga vacancy density (10^19 cm^-3) was found in a thin GaN layer directly grown by LEPEVPE on a sapphire substrate. However, when a GaN substrate (commercial sample grown by Metal Organic Vapor Phase Epitaxy) is used as a template for LEPEVPE deposition, the vacancy density of the film is low (about 10^16 cm^-3). This fact provides evidences that the LEPEVPE technique is able to produce high quality GaN layers
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