Influence of Dynamics on Magic Numbers for Silicon Clusters

We present the results of over 90 tight-binding molecular-dynamics simulations of collisions between three- and five-atom silicon clusters, at a system temperature of 2000K. Much the most likely products are found to be two 'magic' four-atom clusters. We show that previous studies, which focused on the equilibrium binding energies of clusters of different sizes, are of limited relevance, and introduce a new effective binding energy which incorporates the highly anharmonic dynamics of the clusters. The inclusion of dynamics enhances the magic nature of both Si4 and Si6 and destroys that of Si7.Comment: 12 pages, 3 Figures, 500 KB gzipped PostScript fil

Elimination of unoccupied state summations in it ab initio self-energy calculations for large supercells

We present a new method for the computation of self-energy corrections in large supercells. It eliminates the explicit summation over unoccupied states, and uses an iterative scheme based on an expansion of the Green's function around a set of reference energies. This improves the scaling of the computational time from the fourth to the third power of the number of atoms for both the inverse dielectric matrix and the self-energy, yielding improved efficiency for 8 or more silicon atoms per unit cell

Systematic vertex corrections through iterative solution of Hedin's equations beyond the it GW approximation

We present a general procedure for obtaining progressively more accurate functional expressions for the electron self-energy by iterative solution of Hedin's coupled equations. The iterative process starting from Hartree theory, which gives rise to the GW approximation, is continued further, and an explicit formula for the vertex function from the second full cycle is given. Calculated excitation energies for a Hubbard Hamiltonian demonstrate the convergence of the iterative process and provide further strong justification for the GW approximation

Non-equilibrium inelastic electronic transport: Polarization effects and vertex corrections to the self-consistent Born approximation

We study the effect of electron-vibron interactions on the inelastic transport properties of single-molecule nanojunctions. We use the non-equilibrium Green's functions technique and a model Hamiltonian to calculate the effects of second-order diagrams (double-exchange DX and dressed-phonon DPH diagrams) on the electron-vibration interaction and consider their effects across the full range of parameter space. The DX diagram, corresponding to a vertex correction, introduces an effective dynamical renormalization of the electron-vibron coupling in both the purely inelastic and the inelastic-resonant features of the IETS. The purely inelastic features correspond to an applied bias around the energy of a vibron, while the inelastic-resonant features correspond to peaks (resonance) in the conductance. The DPH diagram affects only the inelastic resonant features. We also discuss the circumstances in which the second-order diagrams may be approximated in the study of more complex model systems.Comment: To be published in PR

Enhancements to the GW space-time method

We describe the following new features which significantly enhance the power of the recently developed real-space imaginary-time GW scheme (Rieger et al., Comp. Phys. Commun. 117, 211 (1999)) for the calculation of self-energies and related quantities of solids: (i) to fit the smoothly decaying time/energy tails of the dynamically screened Coulomb interaction and other quantities to model functions, treating only the remaining time/energy region close to zero numerically and performing the Fourier transformation from time to energy and vice versa by a combination of analytic integration of the tails and Gauss-Legendre quadrature of the remaining part and (ii) to accelerate the convergence of the band sum in the calculation of the Green's function by replacing higher unoccupied eigenstates by free electron states (plane waves). These improvements make the calculation of larger systems (surfaces, clusters, defects etc.) accessible.Comment: 10 pages, 6 figure

Aerodynamic and acoustic behavior of a YF-12 inlet at static conditions

An aeroacoustic test program to determine the cause of YF-12 inlet noise suppression was performed with a YF-12 aircraft at ground static conditions. Data obtained over a wide range of engine speeds and inlet configurations are reported. Acoustic measurements were made in the far field and aerodynamic and acoustic measurements were made inside the inlet. The J-58 test engine was removed from the aircraft and tested separately with a bellmouth inlet. The far field noise level was significantly lower for the YF-12 inlet than for the bellmouth inlet at engine speeds above 5500 rpm. There was no evidence that noise suppression was caused by flow choking. Multiple pure tones were reduced and the spectral peak near the blade passing frequency disappeared in the region of the spike support struts at engine speeds between 6000 and 6600 rpm

Conductance and polarization in quantum junctions

We revisit the expression for the conductance of a general nanostructure -- such as a quantum point contact -- as obtained from the linear response theory. We show that the conductance represents the strength of the Drude singularity in the conductivity $\sigma(k,k';i\omega \to 0)$. Using the equation of continuity for electric charge we obtain a formula for conductance in terms of polarization of the system. This identification can be used for direct calculation of the conductance for systems of interest even at the {\it ab-initio} level. In particular, we show that one can evaluate the conductance from calculations for a finite system without the need for special ``transport'' boundary conditions

Density-Polarization Functional Theory of the response of a periodic insulating solid to an electric field.

The response of an infinite, periodic, insulating, solid to an infinitesimally small electric field is investigated in the framework of Density Functional Theory. We find that the applied perturbing potential is not a unique functional of the periodic density change~: it depends also on the change in the macroscopic {\em polarization}. Moreover, the dependence of the exchange-correlation energy on polarization induces an exchange-correlation electric field. These effects are exhibited for a model semiconductor. We also show that the scissor-operator technique is an approximate way of bypassing this polarization dependence.Comment: 11 pages, 1 Fig

The long-wavelength behaviour of the exchange-correlation kernel in the Kohn-Sham theory of periodic systems

The polarization-dependence of the exchange-correlation (XC) energy functional of periodic insulators within Kohn-Sham (KS) density-functional theory requires a ${\cal O} (1/q^2)$ divergence in the XC kernel for small vectors q. This behaviour, exemplified for a one-dimensional model semiconductor, is also observed when an insulator happens to be described as a KS metal, or vice-versa. Although it can occur in the exchange-only kernel, it is not found in the usual local, semi-local or even non-local approximations to KS theory. We also show that the test-charge and electronic definitions of the macroscopic dielectric constant differ from one another in exact KS theory, but are equivalent in the above-mentioned approximations

Comment on "Quantum Confinement and Optical Gaps in Si Nanocrystals"

We show that the method used by Ogut, Chelikowsky and Louie (Phys. Rev. Lett. 79, 1770 (1997)) to calculate the optical gap of Si nanocrystals omits an electron-hole polarization energy. When this contribution is taken into account, the corrected optical gap is in excellent agreement with semi-empirical pseudopotential calculations.Comment: 3 pages, 1 figur