Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloy as magnetic electrodes

HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for concluding that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film.Comment: 11 pages, 10 figures, Thin Solid Film

Magnetization dynamics in Co2MnGe/Al2MnGe/Al2O3$/Co tunnel junctions grown on different substrates

We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are compared to the magnetic properties of Co and of Co$_{2}$MnGe single films lying on sapphire substrates. X-rays diffraction always shows a (110) orientation of the Co$_{2}$MnGe films. Structural observations obtained by high resolution transmission electron microscopy confirmed the high quality of the TMJ grown on sapphire. Our vibrating sample magnetometry measurements reveal in-plane anisotropy only in samples grown on a sapphire substrate. Depending on the substrate, the ferromagnetic resonance spectra of the TMJs, studied by the microstrip technique, show one or two pseudo-uniform modes. In the case of MgO and of Si substrates only one mode is observed: it is described by magnetic parameters (g-factor, effective magnetization, in-plane magnetic anisotropy) derived in the frame of a simple expression of the magnetic energy density; these parameters are practically identical to those obtained for the Co single film. With a sapphire substrate two modes are present: one of them does not appreciably differ from the observed mode in the Co single film while the other one is similar to the mode appearing in the Co$_{2}$MnGe single film: their magnetic parameters can thus be determined independently, using a classical model for the energy density in the absence of interlayer exchange coupling.Comment: 5 pages, 6 figure

On Predicting Mössbauer Parameters of Iron-Containing Molecules with Density-Functional Theory

The performance of six frequently used density functional theory (DFT) methods (RPBE, OLYP, TPSS, B3LYP, B3LYP*, and TPSSh) in the prediction of Mössbauer isomer shifts(δ) and quadrupole splittings (ΔEQ) is studied for an extended and diverse set of Fe complexes. In addition to the influence of the applied density functional and the type of the basis set, the effect of the environment of the molecule, approximated with the conducting-like screening solvation model (COSMO) on the computed Mössbauer parameters, is also investigated. For the isomer shifts the COSMO-B3LYP method is found to provide accurate δ values for all 66 investigated complexes, with a mean absolute error (MAE) of 0.05 mm s–1 and a maximum deviation of 0.12 mm s–1. Obtaining accurate ΔEQ values presents a bigger challenge; however, with the selection of an appropriate DFT method, a reasonable agreement can be achieved between experiment and theory. Identifying the various chemical classes of compounds that need different treatment allowed us to construct a recipe for ΔEQ calculations; the application of this approach yields a MAE of 0.12 mm s–1 (7% error) and a maximum deviation of 0.55 mm s–1 (17% error). This accuracy should be sufficient for most chemical problems that concern Fe complexes. Furthermore, the reliability of the DFT approach is verified by extending the investigation to chemically relevant case studies which include geometric isomerism, phase transitions induced by variations of the electronic structure (e.g., spin crossover and inversion of the orbital ground state), and the description of electronically degenerate triplet and quintet states. Finally, the immense and often unexploited potential of utilizing the sign of the ΔEQ in characterizing distortions or in identifying the appropriate electronic state at the assignment of the spectral lines is also shown

Nouvelles considerations sur un eclatement magnetique hyperfin produit par implantation ionique dans FeAl 40%at.

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CEMS STUDY OF Fe 60 Al 40 THIN FILMS

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Un Calcul Simple des Deux Premiers Moments de la Distribution de Dopants Implantés a Basse Énergie

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Magnetic study of epitaxial Fe∕InGaAs∕InP(100) deposited by ion-beam sputtering

International audienceFe layers, 3, 6, 10, and 25 nm thick, were epitaxially deposited by ion-beam sputtering on InGaAs∕InP(100) wafers. For the 3-nm-thick layer, the sample shows a strong in-plane uniaxial magnetic anisotropy along the [110] direction between 5 and 300 K. The 6-nm film exhibits competition between the uniaxial magnetic anisotropy and the magnetic anisotropy of the bulk bcc Fe. The fourfold magnetic anisotropy of the bulk Fe dominates for the 10-nm Fe film. A decrease of the magnetization is observed for the thinner sample as compared to the bulk. This decrease is discussed in terms of Fe thickness, interface effect, diffusion effect, and possible phases at the interface with the semiconductor

Magnetic study of epitaxial Fe∕InGaAs∕InP(100) deposited by ion-beam sputtering

International audienceFe layers, 3, 6, 10, and 25 nm thick, were epitaxially deposited by ion-beam sputtering on InGaAs∕InP(100) wafers. For the 3-nm-thick layer, the sample shows a strong in-plane uniaxial magnetic anisotropy along the [110] direction between 5 and 300 K. The 6-nm film exhibits competition between the uniaxial magnetic anisotropy and the magnetic anisotropy of the bulk bcc Fe. The fourfold magnetic anisotropy of the bulk Fe dominates for the 10-nm Fe film. A decrease of the magnetization is observed for the thinner sample as compared to the bulk. This decrease is discussed in terms of Fe thickness, interface effect, diffusion effect, and possible phases at the interface with the semiconductor

Magnetic Fe60Al40 thin films

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Properties of mechanically alloyed Fe100−xCrx powder mixtures: Mössbauer study

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