Executive Incentive, Equity Balance and Capital Occupying——From the Perspective of Stock Pledge

随着我国资本市场的不断发展，越来越多的公司选择公开发行股票的方式来募集生产经营所需资金。股东通过质押上市公司股权，可以在不丧失控制权的条件下便捷且低成本地进行融资。股权质押融资正是在这样的背景下发展起来的。 但是大股东往往把股权质押当作融资方式的次选，因为股权质押在股价崩盘和大股东财务困境时会使大股东资金流进一步紧张，甚至丧失公司控制权。因此，大股东往往只有在面临融资约束时才会选择股权质押融资，而这时大股东通过资金占用“掏空”上市公司的动机就很强烈。 如何从公司内部寻找有效的机制设计约束大股东在股权质押情境下的“掏空”行为，需要结合我国“一股独大”、传统公司治理机制作用有限这些实情。本文从...With the continuous development of Chinese capital market, an increasing number of companies choose public offering to raise funds for production and operation. Major shareholders might pledge copy rights in order to raise funds conveniently as well as cost-effectively without losing control. In this kind of environment, pledge of stock rights has made great strides. Pledge of stock rights is no...学位：工商管理硕士院系专业：管理学院_财务学学号：3212014115065

股权质押、股权激励与大股东资金占用

资金占用是大股东利用控制权侵占上市公司利益的重要方式,已成为阻碍中国资本市场健康发展的\"顽疾\"。本文从大股东融资约束视角出发,采用2007—2015年沪深两市A股上市公司股权质押数据,研究股权质押对大股东占用上市公司资金的影响,分析不同股权质押情景下股权激励是否会降低大股东占用上市公司资金的可能性,结果表明:大股东股权质押显著提高大股东占用上市公司资金的可能性;股权激励降低了大股东股权质押占用上市公司资金的可能性,但是这种影响仅在高股权制衡组上市公司具有显著效应。防范大股东侵占上市公司利益,要完善对上市公司高管的股权激励机制,加大对上市公司高管股权激励的力度;要完善资本市场监管制度和投资者保护机制,加大对资本市场监管和投资者保护的力度;要强化上市公司的治理机制建设,为减少大股东与中小股东利益冲突、降低大股东侵占上市公司利益的可能性创造条件。国家自然科学基金面上项目《控股股东股权质押动机、经济后果与治理机制研究》(项目编号:71672157);国家自然科学基金面上项目《中国上市公司关联交易研究、动机、经济后果与治理机制》(项目编号:71572165)的资

A Two-dimensional Analytical Model to GAT′s Gate Shielding Effect

【中文摘要】 建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了GAT的栅屏蔽效应的解析表达式 ,并借助计算机对栅屏蔽效应给以证实。该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。 【英文摘要】 A two dimensional analytical model of the electric potential and field distribution in GAT’s collector depletion space in the cut off state is derived for the first time.The formula for GAT’s gate shielding effect is derived and the gate shielding effect is proved by aid of computer quantitatively.This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high breakdown voltage.国家自然科学基金( No.69896260 -06); 国家高技术研究发展计划( 863-715-010

An Analysis of GATs Compatibility Between High Frequency and High Base Region Punchthrough Voltage

【中文摘要】 通过作者最近建立的关于 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果。 【英文摘要】 By the aid of the two dimensional analytical model of the electric potential and field distribution in GATs collector depletion space in a cut off state which was established by the writers lately,the GATs base region punchthrough voltage V PI was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high frequency and high voltage were explained.国家自然科学基金( No.69896260-06 );国家高技术研究发展计划( 863-715-010

An Analysis of GAT′s Optimal Designing

【中文摘要】 通过作者最近建立的关于电力半导体器件 GAT的集电结耗尽层电位分布和电场分布的二维解析模型即《GAT栅屏蔽效应二维解析模型》、《GAT实现高频率与高基区穿通电压兼容特性分析》以及《GAT实现高电流增益与高雪崩击穿电压兼容特性分析》,定量研究了优化设计 GAT的材料参数和结构参数的关系。 【英文摘要】 By the aid of the two dimensional analytical model of the electric potential and field distribution in power semiconductor device GAT′s collector depletion space in the cutoff state,i.e.the two dimensional analytical model to GAT′s gate shielding effect,and the analysis to GAT′s compatibility between high frequency and high base region punchthrough voltage and the analysis to GAT′s compatibility between high current gain and high avalanche brea..

An Analysis of GATs Compatibility Between High Current Gain and High Avalanche Breakdown Voltage

【中文摘要】 通过作者最近建立的关于电力半导体器件 GAT的集电结耗尽层电位分析和电场分布的二维解析模型定量研究了 GAT的雪崩击穿特性 ,并且定量解释了该器件实现高击穿电压与高电流增益兼容的实验结果。 【英文摘要】 By the aid of the two dimensional analytical model [5] of the electric potential and field distribution in power semiconductor GATs collector depletion space in a cut off state which was established by the writers lately,the GATs avalanche breakdown characteristics was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high breakdown voltage and high current gain,were...国家自然科学基金!( No.69896260-06 );国家高技术研究发展计划( 863-715-010

High-Frequency and High-Voltage Characteristics on Gate Associated Transistors

【中文摘要】 建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的栅屏蔽效应和 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果 .该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考 【英文摘要】 The two\|dimensional analytical model of the electric potential and field distribution in GAT's collector depletion layer in the cut\|off state is derived for the first time.The GAT's gate shielding effect and the GAT's base region punchthrough voltage V PI are analysed quantitatively, and the experimental results that the GATs can realize the compatibility between high frequency and high voltage is explained. This model will provide assistance to the optimal design of bipolar power transistor with...国家自然科学基金!( No.69896260 -06); 国家高技术研究发展计划( 863-715-010

纳米金刚石球晶的激光溅射产生

联系人：郑兰荪以脉冲激光束溅射浸入水中的单质碳样品.观察到产生一种外形完美且具有金刚石结构的纳米碳球.研究中考察了处于固/液界面的各种碳源在脉冲激光作用下发生的变化,初步探讨纳米碳球的形成原因.研究结果揭示:对于表面悬挂键为其他基团所饱和的纳米碳粒,金刚石与石墨结构的热力学稳定性相近,并且当熔融碳的尺寸小至纳米级时,其表面张力能产生较高的压力,因此使它同样有可能凝聚成金刚石的结构.国家杰出青年科学基金与国家教育委员会“跨世纪优秀人才计划”基金资助项

First-principles Studies on Some Complex Materials

对复杂材料体系进行量子力学的从头计算一直是材料和物理科学研究的重要方向 .采用密度泛函理论和第一原理赝势法 ,我们对以下一些复杂的体系进行了研究 ,包括 :1)计算了铝中锂 ,硅 ,镁等重要杂质的形成能 ,说明了这些杂质形成替位的可能性 ;2 )研究了过渡金属 W,Mo和 Nb(0 0 1)表面在外加电场下的表面基态结构的改变 .发现了 W(0 0 1)和 Mo(0 0 1)表面的基态结构随着电场的增强而相变 ,而 Nb(0 0 1)表面的结构却不会改变 ;3)从第一原理的角度研究了由 Al12 X(X=C,Si,Ge)原子集团构成晶体的可能性 ,指出通过 Al12 X集团立方密堆积的方法来构造半导体是不合适的 ;4 )计算了一系列过渡金属在 Al(0 0 1)表面上的吸附 ,发现 Pt,Au吸附时的“反常”功函数变化行为 .九五 8 6 3计划新材料领域!(86 3- 715- 10 );; 国家自然科学基金!(194 0 4 0 11)资助项

The Prerequisite for the Optimal Designing of Nucleus Radiation resistant Power Transistor GAT

【中文摘要】 通过关于电力半导体器件 GAT的集电结耗尽层电位分布和电场分布的二维解析模型定量研究了优化设计 GAT的工艺参数和结构参数的关系 ,即抗核辐照器件 GAT的优化设计必要条件 【英文摘要】 By the aid of the two dimensional analytical model of the electric potential and field distribution in power semiconductor device GAT′s collector depletion space in the cut off state, which was established by the writers lately, the GAT′s optimal designing relations among the parameters of process and structure,i.e. the prerequisite for the optimal designing of nucleus radiation resistant device GAT, was investigated quantitatively.国家自然科学基金!(69896260-60 ); 国家高技术研究发展计划!(863-715-010 )资助项