Evaluation of Hydrogen Induced Defects Using Channeling Rutherford Backscattering Spectroscopy

High dose Hydrogen implantation (80keV, 5×10^H・cm^) induce exfoliation phenomena after 500℃ heating. In this study, for making of the influence of impurity clear, the damaged layer in the hydrogen-implanted silicon was observed with cross sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The behaviors of three types of specimens (p++, p and n type, respectively) were compared The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peakand a second peak in a shallow region

循環器領域におけるMDCT を用いた新しい検査体系の確立

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