Electrochemical, STM Tip-induced, Template Synthesis Fabrication of Surface Metal Nanostructures

当物质的尺寸进入纳米级的尺度时，将出现量子效应、小尺寸效应和表面及界面效应而呈现出既不同于宏观物体、也不同于单个原子的奇异现象。纳米科学与技术是研究和利用这一尺度上物质特性的多学科交叉的前沿和热点领域。纳米材料是纳米科学技术的基本组成部分，它是由三维空间中至少有一维处于纳米尺度范围的基本单元构成的材料，这一基本单元称为纳米结构。纳米微粒、纳米管、纳米棒和纳米薄层等都是纳米结构。若将它们按规律有序排列，则可以组装出常规体系不具备的物性。它们不仅具有单个纳米粒子的各种效应，而且还将出现许多如量子耦合效应与协同效应等新现象。 运用化学和物理等多种手段实现纳米至原子尺度范围的有序表面纳米结构的人工和...When the size of a substance is reduced to nanometer scale, several phenomena such as quantum confinement effect, small size effect, surface and interface effect may appear, which make the substance significantly different from its bulk or single atoms in physical and chemical properties. Being a disciplinary of many subjects, nanoscale science and technology (Nano-ST) includes fundamental researc...学位：理学博士院系专业：化学化工学院化学系_物理化学(含化学物理)学号：B19992501

暂态电化学表面增强拉曼光谱研究对硝基苯硫酚分子的电化学还原过程

对硝基苯硫酚是表面增强拉曼光谱研究中最常用的探针分子之一,对硝基苯硫酚在电极表面电化学还原反应的研究有助于对芳香族硝基化合物还原机理的认识.本文应用暂态电化学-表面增强拉曼光谱技术,研究了对硝基苯硫酚在循环伏安和计时电流法过程中的表面增强拉曼光谱.结果表明,实验实现了完全与电化学检测时间分辨率同步的表面增强拉曼光谱检测,以最快5毫秒的时间分辨率研究了对硝基苯硫酚分子在金电极表面的还原过程.结果分析推测其此反应过程极快,在5毫秒的时间分辨率下仍难以捕获其中间物种.本研究为人们更深层次研究和认识硝基苯类化合物电化学还原过程提供了参考和方向

In Situ Raman Spectroscopyic Study of Silicon Etching in HF Solutions

硅刻蚀的现场拉曼光谱研究刘峰名任斌汤儆田中群（厦门大学固体表面物理化学国家重点实验室，化学系，物理化学研究所厦门361005）InSITurAMAnSPECTrOSCOPyICSTudyOfSIlICOnETCHIngInHfSOluTIOnSf....Abstract In situ Raman spectra of SiH x vibration modes For silicon electrodes in dilute aqueous HF solutions are reported For the First time using a highly sensitive conFocal Raman microprobe system.It has been Found that the intensity of SiH 2 vibration band increases while that of Si Si vibration band decreases in the photo etching process, which can be assigned to the laser induced oxidation and the aggressive attack of HF at the silicon surFace.Some possibe explanations were considered For the enhanced background.国家自然科学基金;国家教委资

Electrochemical Micromachining on Different Types of GaAs by Confined Etchant Layer Technique

应用约束刻蚀剂层技术(CElT)对gAAS进行电化学微加工.研究了刻蚀溶液体系中各组成的浓度比例、gAAS类型、掺杂以及阳极腐蚀过程对gAAS刻蚀加工过程的影响.循环伏安实验表明,br-可以通过电化学反应生成br2作为刻蚀剂,l-胱氨酸可作为有效的捕捉剂.CElT中刻蚀剂层被紧紧束缚于模板表面,模板和工件之间的距离小于刻蚀剂层的厚度时,刻蚀剂可以对gAAS进行加工.利用表面具有微凸半球阵列的导电模板,可以在不同类型gAAS上加工得到微孔阵列.实验结果表明:在相同刻蚀条件下,gAAS的加工分辨率与刻蚀体系中各组分的浓度比例有关,刻蚀结构的尺寸随着刻蚀剂与捕捉剂浓度比的增加而增大;在加工过程中,P-gAAS相对于n-gAAS和无掺杂gAAS受到阳极氧化过程的影响较为显著,P-gAAS表面易生成氧化物层,影响电化学微加工过程.X射线光电子能谱(XPS)和极化曲线实验也证明了这一点.The confined etchant layer technique (CELT) was applied to electrochemical micromachining on different types of GaAs (p-type, n-type, undoped).Cyclic voltammetry curves showed that the etchant bromine was generated on the mold and L-cystine was thus used as an efficient scavenger to react quickly with the etchant.Therefore, the etchant was confined very close to the surface of the mold and it etched the workpiece of GaAs when the distance between the mold and workpiece was less than the thickness of the confined etchant layer.An array of concave microstructures was fabricated on different types of GaAs by CELT using a mold with an array of convex hemispheres.Several factors including the concentration ratio between the etchant and the scavenger, types of GaAs, and anodic oxidation during the process of CELT were studied.Experimental results showed that the resolution of electrochemical micromachining increased when the thickness of the confined etchant layer decreased.During the microfabrication process, anodic dissolution affected the electrochemical micromachining of p-type GaAs much more than that of the other two types of GaAs.The oxide layer on p-GaAs had a strong influence on electrochemical micromachining.X-ray photoelectron spectroscopy (XPS) and polarization curves also proved the existence of the oxide layer on p-GaAs.国家自然科学基金(20873112);国家光电子晶体材料工程技术研究中心开放课题(2005DC105003)资助项目---

退火对4-硝基苯硫酚分子常规拉曼峰的影响

文章利用氮气氛围下退火实验实现了4-硝基苯硫酚(PNTP)固体粉末样品中PNTP分子和4,4’-二硝基二苯二硫醚(NPDS)分子的有效分离,考察了不同温度对退火的影响,并利用拉曼光谱对其进行定性分析,同时利用理论计算对NPDS分子的拉曼峰进行了指认.该方法为快速定性PNTP分子中是否含有NPDS提供了快速简便的方法.福建省自然科学基金面上项目(2019J01746

Electrochemical preparation and AFM characterization of gold nanoparticles on HOPG

[中文文摘]本文以高序石墨为基底 ,氯金酸溶液为支持电解质 ,以对表面破坏力小的轻敲模式原子力显微镜为观察手段 ,研究基底的表面状态及电沉积条件对形成的纳米颗粒尺寸和形态的影响 ,并简要讨论所形成的金纳米粒子的表面Raman增强效应和对乙二醇氧化的电催化效应.[英文摘要]We present a study on the electrochemical preparation of Au nanoparticles on HOPG from HAuCl 4 solution characterized by tapping mode AFM. It has been shown that deposition on activated HOPG and non activated HOPG follows progressive and instantaneous nucleation and growth mode, respectively. The size and morphology of the nanoparticles depends on the deposition condition. Au nanoparticles of narrow size distribution of～50 nm can be prepared which has a tendency to arrange into a two dimensional order on homogeneous HOPG (nonactivated). The electrocatalytic properties and SERS properties of the Au nanoparticles are briefly discussed.自然科学基金资助项目(No：29833060

纳米结构导电聚合物和半导体膜的组装和表征

简述了近年来新发展的几种纳米结构导电聚合物和半导体的构建方法 ,并对所制备的纳米结构导电聚合物和半导体进行表征 ,发现一些如光电化学纳米效应、光电流谱拓宽和量子尺寸效应等有趣的现象

Electrochemical Micromachining on Different Types of GaAs by Confined Etchant Layer Technique

The confined etchant layer technique (CELT) was applied to electrochemical micromachining on different types of GaAs (p-type, n-type, undoped). Cyclic voltammetry curves showed that the etchant bromine was generated on the mold and L-cystine was thus used as an efficient scavenger to react quickly with the etchant. Therefore, the etchant was confined very close to the surface of the mold and it etched the workpiece of GaAs when the distance between the mold and workpiece was less than the thickness of the confined etchant layer. An array of concave microstructures was fabricated on different types of GaAs by CELT using a mold with an array of convex hemispheres. Several factors including the concentration ratio between the etchant and the scavenger, types of GaAs, and anodic oxidation during the process of CELT were studied. Experimental results showed that the resolution of electrochemical micromachining increased when the thickness of the confined etchant layer decreased. During the microfabrication process, anodic dissolution affected the electrochemical micromachining of p-type GaAs much more than that of the other two types of GaAs. The oxide layer on p-GaAs had a strong influence on electrochemical micromachining. X-ray photoelectron spectroscopy (XPS) and polarization curves also proved the existence of the oxide layer on p-GaAs.National Natural Science Foundation of China [20873112]; Fund of National Engineering Research Center for Optoelectronic Crystalline Materials of China [2005DC105003

Vision-related Quality of Life and Emotional Impact in Children with Strabismus: a Prospective Study

The potential impact of the surgical correction of strabismus on vision-related quality of life (VRQOL) and the symptoms of anxiety and depression in children with strabismus remain unclear. The present study included 60 children with strabismus: 30 with heterophoria and 30 with heterotropia. A healthy age- and gender-matched control group (n = 60) was also recruited. The psychological instruments that were used were the short-form 25-item National Eye Institute Visual Functioning Questionnaire (NEI-VFQ-25) and the Hospital Anxiety and Depression Scale (HADS). The results demonstrated that eight of the 12 NEI-VFQ-25 subscales were significantly impaired in children with strabismus compared with matched controls. Compared with pre-operative values, significant improvements were noted after surgery in the NEI-VFQ-25 summary score, and the anxiety and depression scores. This study demonstrated that the NEI-VFQ-25 instrument can be used in strabismus children and that surgical interventions can improve VRQOL, anxiety and depression in strabismus patients

Concentration Protile of Etchant Measured by Microelectrode Technique in the Process of Chemical Micromachining

利用微圆盘电极技术,测定了KBr、L-胱氨酸和硫酸组成的刻蚀溶液体系中Pt电极表面电化学氧化产生的刻蚀剂Br2浓度分布,为约束刻蚀剂层技术(CELT)中刻蚀体系的选择和优化提供更直观的依据.GaAs表面CELT微加工实验证明了用微圆盘电极测得的表面刻蚀剂的浓度分布趋势与微加工实验所得到的结果一致.A carbon-disk microelectrode was used to investigate the surface concentration profile of etchant Br2, which was electrogenerated on the Pt working electrode. The steady state reducing currents of Br2 at different distances away from the Pt electode was measured. The concentration profile was estimated from the current-distance variation curves as a function of different sampling times. Experimentally determined concentration profiles are in good agreement with those estimated from the microetching results. The microelectrode technique has offered a good method to choose suitable etching solution for chemical micromachining.国家高新技术发展规划(863项目)(2002AA404170);; 福建省自然科学基金计划资助项目(E0520001