大规模MIMO下贝叶斯压缩感知信道估计方法

由于存在导频污染问题,基站侧高效、高精度地获取信道状态信息对实现大规模多输入多输出（MIMO）正交频分复用系统的潜在优点至关重要。通过使用压缩感知技术,可以有效解决导频污染问题。然而,在压缩感知信道估计算法中,很难直接获取信道稀疏度的先验知识。为了解决这个问题,文章提出一种基于贝叶斯压缩感知的信道估计方法,该方法将稀疏信号的统计信息作为先验知识,并运用于多用户大规模MIMO系统的上行链路。仿真结果表明,与传统的信道估计方法相比,所提方法能有效重构原始信道系数

毫米波MIMO系统中混合波束赋形算法

针对毫米波多输入多输出系统中的混合波束赋形问题,提出一种基于迭代更新思想的混合波束赋形算法,该算法通过提高模拟波束赋形矩阵与误差矩阵的相关性,获得了较优的系统性能。首先所提算法通过不断迭代更新得到误差矩阵,然后对误差矩阵进行奇异值分解得到左奇异值矩阵,并以此获得模拟波束赋形矢量,最后根据得到的模拟矢量更新模拟波束赋形矩阵。仿真结果表明,所提算法的性能优于传统的正交匹配追踪混合波束赋形算法,尤其当数据流数与射频链路数相等且数量较少时,所提算法的性能明显优于正交匹配追踪算法,且更近似于纯数字波束赋形的系统性能

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Surface morphology of homoepitaxial GaN (0001) grown by metalorganic vapor phase epitaxy was studied. Selective growth was observed on the homoepitaxial GaN layer grown on as received GaN substrate and was attributed to the existence of substrate surface defects. The steps were pinned by defects and meandered. Due to the pinning effect, the step pattern developed to a wavy surface with a strip-like feature along the [11 ($) over bar0] direction during the subsequent growth of a thick n-GaN layer. Because of the surface undulations, the emission of InGaN/GaN multiple quantum wells grown on the n-GaN layer was inhomogeneous. The surface defects on GaN substrate could be removed by dry etching and the homoepitaxial layer on the etched substrate showed a smooth morphology and straight atomic steps. As a result, the emission of the InGaN/GaN MQWs became homogeneous. (C) 2015 Elsevier B.V. All rights reserved

Time delay in InGaN multiple quantum well laser diodes at room temperature

This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

<div id="articleAbsctract"> <p> Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.</p> </div

Thermal analysis of GaN laser diodes in a package structure

<div id="articleAbsctract"> <p> Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.</p> </div

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

A comprehensive analysis of the degradation mechanism of blue InGaN/GaN laser diodes (LDs) is carried out by investigating the electrical and optical characteristics. The increase in the leakage current as well as decrease in the slope efficiency is observed. The luminescence properties of the active region at different aging stages are studied by means of cathodoluminescence. Significant degradation of the active region is observed on the room temperature cathodoluminescence while the low temperature cathodoluminescence shows almost no degradation, indicating that the degradation of the LDs is due to generation of low temperature frozen point defects. Furthermore, the generation of the defects follows a kinetic mechanism enhanced by electron-hole non-radiative recombination which explains the acceleration of time degradation in our LDs

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively

Prediction of Energy Resolution in the JUNO Experiment

International audienceThis paper presents the energy resolution study in the JUNO experiment, incorporating the latest knowledge acquired during the detector construction phase. The determination of neutrino mass ordering in JUNO requires an exceptional energy resolution better than 3% at 1 MeV. To achieve this ambitious goal, significant efforts have been undertaken in the design and production of the key components of the JUNO detector. Various factors affecting the detection of inverse beta decay signals have an impact on the energy resolution, extending beyond the statistical fluctuations of the detected number of photons, such as the properties of liquid scintillator, performance of photomultiplier tubes, and the energy reconstruction algorithm. To account for these effects, a full JUNO simulation and reconstruction approach is employed. This enables the modeling of all relevant effects and the evaluation of associated inputs to accurately estimate the energy resolution. The study reveals an energy resolution of 2.95% at 1 MeV. Furthermore, the study assesses the contribution of major effects to the overall energy resolution budget. This analysis serves as a reference for interpreting future measurements of energy resolution during JUNO data taking. Moreover, it provides a guideline in comprehending the energy resolution characteristics of liquid scintillator-based detectors