Design of the carbon atomic source for deposition of graphene in UHV

Tato bakalářská práce se zabývá návrhem atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách ultravysokého vakua. V první části je stručně popsána problematika růstu epitaxních vrstev, teorie atomárních svazků a teorie sublimace. Druhá část je věnována grafenu, popisu jeho vlastností, metodám výroby, zejména molekulární svazkovou epitaxí. Ve třetí části jsou stručně popsány různé metody detekce a analýzy atomárních svazků. V praktické části této bakalářské práce byl proveden návrh, příslušné numerické výpočty v programu Simion 8.0 a EOD a následná konstrukce uhlíkového atomárního zdroje. V závěru práce jsou popsány dosažené výsledky.This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results.

Plasmonic properties of individual gallium nanoparticles

Gallium is a plasmonic material offering ultraviolet to near-infrared tunability, facile and scalable preparation, and good stability of nanoparticles. In our contribution, we experimentally demonstrate the link between the shape and size of individual gallium nanoparticles and their optical properties. To this end, we utilize scanning transmission electron microscopy combined with electron energy loss spectroscopy. Lens-shaped gallium nanoparticles with a diameter between 10 nm and 200 nm were grown directly on a silicon nitride membrane using an in-house developed effusion cell operated at ultra-high vacuum conditions. We have experimentally proved that they support localized surface plasmon resonances and their dipole mode can be tuned through their size from ultraviolet to near-infrared spectral region. The measurements are supported by numerical simulations using realistic particle shapes and sizes. Our results open the way for future applications of gallium nanoparticles such as hyperspectral absorption of sunlight in energy harvesting or plasmon-enhanced luminescence of ultraviolet emitters

Correlative Raman imaging and scanning electron microscopy: The role of single Ga islands in surface-enhanced Raman spectroscopy of graphene

Surface-enhanced Raman spectroscopy (SERS) is a perspective nondestructive analytic technique enabling the detection of individual nanoobjects, even single molecules. In this paper, we have studied the morphology of Ga islands deposited on chemical vapor deposition graphene by ultrahigh vacuum evaporation and local optical response of this system by the correlative Raman imaging and scanning electron microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga nanoparticles (NPs) ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances. It has been found that this enhancement is island-size-dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as SERS. © 2022 American Chemical Society.European Commission, EC: 71020004, 810626; Grantová Agentura České Republiky, GA ČRCzech Science FoundationGrant Agency of the Czech Republic [20-28573S]; European Commission (H2020-Twininning project)European Commission [810626.SINNCE, M-ERA NET HYSUCAP/TACR-TH71020004]; *BUT*.specific research [*FSI-S-20-648*5]; Ministry of Education, Youth and Sports of the Czech Republic (CzechNanoLab Research Infrastructure) [LM2018110

Geant4 simulation of the residual background in the ATHENA Wide Field Imager from protons deflected by the Charged Particle Diverter

X-ray telescopes opened up a new window into the high-energy universe. However, the last generation of these telescopes encountered an unexpected problem: their optics focused not only X-rays but low-energy (so called soft) protons as well. These protons are very hard to model and can not be distinguished from X-rays. For example, 40\% of XMM-Newton observations is significantly contaminated by soft proton induced background flares. In order to minimize the background from such low-energy protons the Advanced Telescope for High ENergy Astrophysics (ATHENA) satellite introduced a novel concept, the so called Charged Particle Diverter (CPD). It is an array of magnets in a Hallbach design, which deflects protons below 76 keV before they would hit the Wide Field Imager (WFI) detector. In this work, we investigate the effect of scattering of the deflected protons with the CPD walls and the inner surfaces of the WFI detector assembly. Such scattered protons can loose energy, change direction and still hit the WFI. In order to adopt the most realistic instrument model, we imported the CAD model of both the CPD and the WFI focal plane assembly. Soft protons corresponding to $\approx$2.5 hours of exposure to the L1 solar wind are simulated in this work. The inhomogeneous magnetic field of the CPD is included in the simulation. We present a preliminary estimate of the WFI residual background induced by soft proton secondary scattering, in the case of the optical blocking filter present in the field of view. A first investigation of the volumes responsible for scattering the protons back into the field of view is reported.Comment: SPIE conference proceedin

Design of the carbon atomic source for deposition of graphene in UHV

This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results

Deposition and characterization of GaN nanocrystals with a metal core

Tato diplomova prace se zabyva prpravou a charakterizac GaN nanokrystalu s kovovym jadrem. V teoreticke casti teto prace je predstaven material GaN se svymi vlastnos- tmi a aplikacemi. Dale jsou uvedeny substraty pro rust a jednotlive mechanismy rustu GaN nanokrystalu. V dalsm jsou popsany kovove nanocastice a jejich opticke vlastnosti umoznujc zesilovan fotoluminiscence na zaklade interakce plasmonu a GaN. Experi- mentaln cast se zabyva prpravou GaN nanokrystalu s Ag jadrem ve ctyrech krocch. Prvne jsou Ag nanocastice naneseny na substrat Si(111). Nasledne se nechaj zoxidovat. Tretm krokem je depozice Ga a poslednm je nitridace. Jednotlive kroky byly opti- malizovany a analyzovany ruznymi metodami, jako je XPS, SEM, fotoluminiscence a Ramanova spektroskopie.The thesis deals with preparation and characterization of GaN nanocrystals with a metal core. In the theoretical part of the thesis GaN with its properties and applications is introduced. Further, substrates for the growth and dierent mechanisms of the growth of GaN are discussed. Further, metal NPs are introduced and their optical proper- ties are discussed towards plasmon coupling and photoluminiscent enhancement of GaN structures with Ag NPs. The experimental part concerns with four step preparation process of GaN nanocrystals with Ag core. Firstly, Ag NPs are deposited on Si(111) substrate, secondly passivated by native oxide. Third step is Ga deposition and last post-nitridation. Each step was optimized and studied by various methods such as XPS, SEM, photoluminiscence and Raman spectroscopy.

Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures

Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.Czech Science Foundation [20-28573S]; Ministry of Education, Youth and Sports of the Czech Republic (CzechNanoLab Research Infrastructure) [LM2018110]; European Commission [810626 - SINNCE, TH71020004]; BUT [FSI-S-20-6485]European Commission, EC: 71020004, 810626; Ministerstvo Školství, Mládeže a Tělovýchovy, MŠMT: LM2018110; Grantová Agentura České Republiky, GA ČR: 20-28573S; Vysoké Učení Technické v Brně, BUT: FSI-S-20-648