大阪大学大型計算機センターニュース 第65号（Vol.17 №1） 表紙/目次

Photograph taken by Salt Lake Tribune staf

大阪大学経済学 68巻1号 表紙

Photograph taken by Salt Lake Tribune staf

Ledge Design of InGaP Emitter GaAs Based HBTs

A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters. Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device. For state-of-the-art HBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI). In light of previously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dc current gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure. Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply to reliability as well as to the demonstrated gain stability

Initiation of communication from users of AAC and preceding communication partner\u27s utterances

This study examined the effect communication partners’ have on the initiations produced by users of augmentative and alternative communication (AAC). The data was reviewed from a larger study; it included transcripts and videos of a set of four students from an elementary school classroom in the Midwest. The students had a wide range of abilities. Both the student and teacher utterances were analyzed for: different types of communication functions, environmental factors and conversational factors. It was hypothesized that the communicative function of the previous utterance and the level of aided input used would affect the number of initiations. The findings support the concept that the preceding utterance and communication partner can increase or decrease the number of student initiations. This suggests that the communication partner could make adaptions to their own speech and language, as well as the environment, to maximize therapy and the student’s skills

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons

Analysis of roles and groups in blogosphere

In the paper different roles of users in social media, taking into consideration their strength of influence and different degrees of cooperativeness, are introduced. Such identified roles are used for the analysis of characteristics of groups of strongly connected entities. The different classes of groups, considering the distribution of roles of users belonging to them, are presented and discussed.Comment: 8th International Conference on Computer Recognition Systems, CORES 201

InGaP Heterojunction Barrier Solar Cells

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency

Microglial activation state exerts a biphasic influence on brain endothelial cell proliferation by regulating the balance of TNF and TGF-β1

<p>Abstract</p> <p>Background</p> <p>Studies of cerebral ischemia and other neuroinflammatory states have demonstrated a strong association between new vessel formation and microglial recruitment and activation, raising the possibility that microglia may be involved in promoting angiogenesis. As endothelial cell proliferation is a fundamental early step in angiogenesis, the aim of this study was to test this hypothesis by examining the influence of microglial secreted factors on brain endothelial cell (BEC) proliferation using BrdU incorporation.</p> <p>Methods</p> <p>Primary cultures of mouse BEC, microglia and astrocytes were used in this study. Proliferation of BEC was examined by BrdU incorporation. ELISA was used to quantify TNF and TGF-β1 levels within cell culture supernatants.</p> <p>Results</p> <p>Microglia regulated BEC proliferation in a biphasic manner; microglia conditioned medium (MG-CM) from resting microglia inhibited, while that from activated microglia promoted BEC proliferation. A screen of microglial cytokines revealed that BEC proliferation was inhibited by TGF-β1, but promoted by TNF. ELISA showed that TNF and TGF-β1 were both present in MG-CM, and that while TGF-β1 dominated in resting MG-CM, TNF levels were massively increased in activated MG-CM, shifting the balance in favor of TNF. Antibody-blocking studies revealed that the influence of MG-CM to inhibit or promote BEC proliferation was largely attributable to the cytokines TGF-β1 and TNF, respectively.</p> <p>Conclusion</p> <p>This data suggests that microglial activation state might be an important determinant of cerebral angiogenesis; inhibiting BEC proliferation and neovascularization in the normal central nervous system (CNS), but stimulating the growth of new capillaries under neuroinflammatory conditions.</p

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells