A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters. Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device. For state-of-the-art HBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI). In light of previously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dc current gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure. Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply to reliability as well as to the demonstrated gain stability

Chaplin, M.

Lutz, C.R.

Pan, N.

Stevens, K.S.

Welser, R.E.

English

AMS Acta

Ledge Design of InGaP Emitter GaAs Based HBTsK. S. Stevens, R. E. Welser, M. Chaplin, C. R. Lutz, and N. PanKopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780Phone:  (508) 824-6696     email:  kstevens@kopin.comABSTRACTA wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large areaGaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures.  InGaP emitters offer thewidest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters.Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device.  For state-of-the-artHBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI).  In light ofpreviously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dccurrent gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure.Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply toreliability as well as to the demonstrated gain stability.INTRODUCTIONProper emitter ledge design is critical for obtaining reliable, small area, high power HBTs.  A thick or heavily dopedledge will not pinch off sufficiently, resulting in poor device reliability.  Ma et al. propose a ledge monitor which willdetect this undesirable situation prior to reliability measurements [1].  Conversely, too thin or lightly doped of an emitterledge may result in both degraded initial dc characteristics and poor long term device reliability.  In this work, weexplore the impact of emitter material, thickness, and doping on the dc current gain characteristics of large area HBTs atboth room temperature and at elevated temperatures.  AlGaAs/GaAs HBTs exhibit significant drops in peak dc currentgain and gain roll over at higher current densities as either emitter thickness or doping is decreased below 500 Å or2 × 1017 cm-3.  InGaP/GaAs HBTs are much less sensitive to emitter thickness and doping variations, exhibiting goodroom temperature dc characteristics for thickness down to 100 Å or doping as low as 3 × 1016 cm-3.  However, dc currentgain measurements at elevated temperatures (60 ºC and 100 ºC) are more sensitive to changes in InGaP emitterstructure.  The observed changes in dc current gain characteristics with emitter design and temperature are discussed interms of changes in the reverse hole injection component of the base current, which has been identified as a possibledriving force controlling in the long term reliability of HBTs [2,3].  We suggest that the characterization of the initial dccharacteristics at room and elevated temperatures may be used as a tool for the design of the optimal InGaP emitterledge.EXPERIMENTThe devices used in this work were fabricated from HBT wafers grown in a low-pressure MOCVD system.  These largearea devices (L = 75 µm × 75 µm) were fabricated using a simple wet-etching process and tested in the common baseconfiguration.  The maximum collector current density attainable for our measurement and device setup is 1.78 kA/cm2.The emitter composition, thickness, and doping were varied while the remainder of the layers was kept constant.  Theemitters are 50 Å to 800 Å thick InGaP, Al0.35Ga0.65As, or Al0.25Ga0.75As, silicon doped between 3 × 1016 cm-3 and1 × 1018 cm-3.  The composition of the Al0.35Ga0.65As was chosen to match the 1.89eV room temperature energy gap ofpartially disordered InGaP [4].  The turn-on voltage for all devices was controlled via the growth of the emitter-baseinterface to affect the conduction band spike [5].  All turn-on voltages are at the theoretical minimum unless otherwisenoted [6].  The complete HBT layer structure consists of an n+-GaAs:Si subcollector, an n-GaAs:Si collector, a p-GaAs:C base, an n-type emitter (as described above), an n+-GaAs:Si emitter cap and an n+-InGaAs contact layer.To screen out the affects of moderate changes in base sheet resistance and to highlight comparisons between differentemitter compositions, thicknesses, and doping levels, dc current gain obtained from the various HBT structures isnormalized as Gn = (G/Rs,b)/(Gc/Rs,b,c), where Gn is the normalized dc current gain, G is the dc current gain, Rs,b is thebase sheet resistance, Gc is the dc current gain of the control sample, and Rs,b,c is the base sheet resistance of the controlsample.RESULTSFigures 1a and 1b compare normalized peak dc current gain versus thickness and doping for InGaP, 35% AlGaAs, and25% AlGaAs emitters HBTs.  The InGaP emitter HBT exhibits constant dc gain over significantly wider thickness anddoping ranges than do any of the AlGaAs emitter HBTs.  The 35% AlGaAs emitter HBT offers a wider thickness anddoping window than does the 25% AlGaAs emitter HBT.  A rough interpolation and extrapolation of the data suggeststhat a 50 Å InGaP emitter, a 170Å 35% AlGaAs emitter, and a 330 Å 25% AlGaAs emitter yield the same gaindegradation (50%) relative to thicker emitter HBTs.  Similarly, low doped 25% AlGaAs emitter HBTs show the most dccurrent gain degradation and low doped InGaP emitter HBTs show the least.  In fact, there is no room temperature gaindegradation for the lowest doped (3 × 1016 cm-3) InGaP emitter HBT examined in this study.Turn-on voltage clearly plays a role in gain degradation, as shown by the 25% AlGaAs emitter HBT data.  The higherturn-on voltage devices exhibit worse dc current gain degradation for thin and low doped emitters than do the minimizedturn-on devices.a) b)Figure 1     Room temperature normalized peak dc current gain versus (a) emitter thickness and (b) emitter doping.  For(a) The emitter doping level is 4 × 1017 cm-3, and for (b) the emitter thicknesses range from 500 Å to 1300 Å for the fourdata sets.There is also an emitter composition dependence visible in the gain versus collector current data for these HBTs.Specifically, none of the InGaP emitter HBTs showed any gain roll over at high current densities.  Of the 35% AlGaAssamples, only the thinnest (230Å) sample exhibited roll over.  Of the 25% AlGaAs minimized turn-on samples, both thethinnest (300 Å) and the lowest doped (1 × 1017 cm-3) exhibited roll over.  With the exception of the 1300 Å,5 × 1017 cm-3 emitter device, all the 25% AlGaAs high turn-on HBTs showed roll over.Figures 2a and 2b show variable temperature characteristics of the dc current gain versus InGaP emitter thickness anddoping.  These elevated temperature measurements magnify the deficiencies of the thinnest and lowest doped emittersfor InGaP/GaAs HBTs.  In particular, InGaP/GaAs devices with emitters thinner than 200 Å or doped less than1 × 1017 cm-3 have degraded variable temperature dc current gain relative to thicker or more heavily doped emitterstructures.00.20.40.60.811.210 100 1000Emitter Thickness (A)Normalized GainInGaP35% AlGaAs25% AlGaAs25% AlGaAs, Vbe+50mV00.20.40.60.811.21.41E+16 1E+17 1E+18Emitter Doping (cm^-3)Normalized GainInGaP35% AlGaAs25% AlGaAs25% AlGaAs, Vbe+150mVWhereas no dc current gain roll over is present in the InGaP emitter HBT room temperature data, some is clearly visiblein the elevated temperature data.  Specifically, the two lowest doped InGaP emitters exhibited clear roll over at highcurrent densities.a) b)Figure 2     Variable temperature normalized peak dc current gain versus (a) InGaP emitter thickness and (b) InGaPemitter doping.  For (a) the emitter doping is 4 × 1017 cm-3, and for (b) the emitter thickness is 500 Å.DISCUSSIONThe base current (Ib) of a GaAs-based HBT is composed of several different components, including space chargerecombination, neutral base recombination (INBR), reverse hole injection (IRHI), and surface recombination [7].  The holeinjection component is suppressed by the wide energy-gap emitter in an HBT due to an increase in the hole barrierheight.  In sufficiently thick emitter structures, the hole barrier height is related to emitter energy gap and the Fermilevels in the base and emitter layers, not the valence band offset (∆Ev).  Because the reverse hole injection current ishighly temperature sensitive, elevated temperatures, either from internal heating at high current densities (gain roll over)or external heating (variable temperature gain studies), further degrade dc gain [8].  Consistent with the energy gap (andnot ∆Ev) dependence of the reverse hole injection current, it has been previously shown that the dc gain variabletemperature stability of a properly grown Al0.35Ga0.65As emitter HBT is equivalent to that of an InGaP emitter HBT [4].However, when the emitter side of the base-emitter junction depletion region extends beyond the emitter into then+-GaAs emitter cap layer, due a to thin and/or lightly doped emitter, the base-emitter hole barrier will be reduced fromits maximum possible (partially depleted emitter) value.  This leads to an increase in the reverse hole injection current,which in turn reduces the overall gain.  In this regime, unlike the case of a partially depleted emitter, ∆Ev plays anincreasingly important role in determining the hole barrier height as emitter thickness and doping decrease.  Hole barrierreduction in general explains degraded gain for thinner and lower doped emitter HBTs (Fig. 1).  Furthermore, thesuperior gain stability versus various emitter parameters (Fig. 1), of the InGaP emitter HBT over the 35% AlGaAsemitter HBT over the 25% AlGaAs emitter HBT is due to the decreasing valence band discontinuities with GaAs00.20.40.60.811.210 100 1000Emitter Thickness (A)Normalized Gain25C60C100C00.20.40.60.811.21E+16 1E+17 1E+18Emitter Doping (cm^-3)Normalized Gain25C60C100CElevated temperatures serve to increase the sensitivity of the dc current gain measurement to the deleterious effect of areduced hole barrier, by increasing the ratio of reverse hole injection current to base current.  Hence the variabletemperature gain data in Fig. 2 highlights the reduced gain stability and therefore higher reverse hole injection current ofthe thinner and lower doped InGaP emitter HBTs.It should be noted that for the thinnest InGaP emitter (50 Å and 75 Å) HBTs in this study, there are at least threepossible sources of the increased base-emitter hole current as evidenced by the dc current gain degradation.  These are:a) a reverse hole injection current over the hole barrier as discussed above, b) a tunneling current through the holebarrier which is likely dominated by the InGaP valence band discontinuity with the GaAs emitter cap and c) a reducedhole barrier (compared to the theoretical size) due to possible mixing at the interfaces to an extent that the compositionof the entire thin emitter is compromised.For state-of-the art GaAs based HBTs, neutral base recombination and reverse hole injection dominate the base currentat high bias / peak dc gain [3,4].  Under these conditions, IRHI contributes significantly more to Ib for a high turn-on Vbedevice than for a low turn-on Vbe device.  This is because INBR is proportional to the collector current (Ic), whereas IRHI isexponentially dependent on Vbe [3].  This can explain the inferior gain stability versus emitter thickness and doping ofthe high turn-on Vbe 25% AlGaAs HBT (Fig. 1).  For comparable high bias Ic and therefore gain, IRHI is significantlygreater than for the low turn-on Vbe 25% AlGaAs HBT.  Therefore a smaller reduction in the hole barrier (via thicknessor doping reduction) is enough to increase IRHI sufficiently to degrade the gain noticeably.CONCLUSIONSThe previous data and observations argue that dc current gain measurements of large area HBTs gives significantinformation about the injection of holes from the base to the emitter.  This hole current data correlates with the superiorreliability of InGaP emitter HBTs over 25%AlGaAs emitter HBTs [2,9,10] and with the improved reliability of lowturn-on Vbe AlGaAs emitter devices over high turn-on AlGaAs devices [3].  Furthermore, a model has been proposedelsewhere [3] in which materials limited reliability is controlled by the generation of defects in the emitter depletionregion via a recombination enhanced defect reaction process involving an electron, a hole and a previously existing non-radiative recombination center.  If correct, this model suggests that the key to controlling and engineering the materials-related limit on the long term reliability of GaAs-based HBTs lies not only in reducing the initial trap density, but inreducing the reverse hole injection component of the base current.  Working from this model, we suggest dc current gainmeasurements on large-area HBTs can give meaningful insights into the materials limited long term reliability of thestructure.  Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT couldapply to reliability as well as to the demonstrated gain stability.REFERENCES[1] P. Ma, P. Zampardi, L. Zhang, M. F. Chang; Determining the Effectiveness of HBT Emitter Ledge Passivation by Using anOn-Ledge Schottky Diode Potentiometer; 1999; IEEE Electron Device Lett.; 20; 460-462.[2] T. S. Low, C. P. Hutchinson, P. C. Canfield, T. S. Shirley, R. E. Yeats, J. S. C. Chang, G. K. Essilfile, M. K. Culver, W. C.Whiteley, D. C. D’Avanzo, N. Pan, J. Elliot, C. Lutz; Migration from an AlGaAs to an InGaP Emitter HBT IC Process forImproved Reliability; 1998; GaAs IC Symp.; 153-156.[3] R. E. Welser, M. Chaplin, C. R. Lutz, N. Pan; Base Current Investigation of the Long-Term Reliability of GaAs-Based HBTs;2000; GaAs MANTECH; 145-148.[4] R. E. Welser, N. Pan, C. R. Lutz, D. P. Vu, P. J. Zampardi, R. L. Pierson, B. T. McDermott; High PerformanceAl0.35Ga0.65As/GaAs HBT’s; 2000; IEEE Electron Device Lett.; 21; 196-199.[5] W. Liu et al.; Current Transport Mechanism in GaInP/GaAs Heterojunction Bipolar Transistors; 1993; IEEE Trans. ElectronDevices; 40; 1378.[6] R. E. Welser, N. Pan; Turn-on Voltage Investigation of GaAs-based Bipolar Transistors with Ga1-xInxAs1-yNy Base Layers; tobe published.[7] P. M. Asbeck, M.-C. F. Chang, K. C. Wang, D. L. Miller; ; 1990; Introduction to Semiconductor Technology:  GaAs andRelated Compounds; .[8] C.-M. S. Ng, P. A. Houston, H.-K. Yow; Analysis of the Temperature Dependence of Current Gain in Heterojunction BipolarTransistors; 1997; IEEE Trans. Electron Devices; 44; 17-24.[9] N. Pan, J. Elliot, M. Knowles, D. P. Vu, K. Kishimoto, J. K. Twynam, H. Sato, M. T. Fresina, G. E. Stillman; High ReliabilityInGaP/GaAs HBT; 1998; IEEE Electron Device Lett.; 19; 115-117.[10] O. Ueda, A. Kawano, T. Takahashi, T. Tomioka, T. Fujii, S. Sasa; Current Status of Reliability of InGaP/GaAs HBTs; 1997;Solid-State Elect; 41; 1605-1610.

Ledge Design of InGaP Emitter GaAs Based HBTs

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